38results about How to "Efficient luminous efficiency" patented technology

The present invention discloses a nanocrystal with a quantum well energy level structure and a preparation method thereof, and a semiconductor device. The nanocrystal comprises S central structural units located at the center of the nanocrystal and N surrounding structure units arranged in order located at the outer side of the center of the nanocrystal, wherein S is not smaller than 1, and the N is not smaller than 1, the central structural units and the surrounding structure units are the quantum dot structural units, and are the gradually changing structures with energy level width changing in the vertical direction or the uniform component structures with the consistent energy level width in the vertical direction. The novel nanocrystal provided by the invention can realize the higher-efficiency nanocrystal luminous efficiency and satisfy the integrated performance requirement of the semiconductor device and the corresponding display technology for the nanocrystal, and is the ideal nanocrystal material being suitable for the semiconductor device and the display technology.

The invention discloses an aggregation-induced emission molecule as well as a preparation method and a use thereof. The aggregation-induced emission molecule has a structural formula (shown in the description), wherein when Ar1 and Ar2 are same groups, Ar2 is one of a formula, a formula, a formula or a formula (shown in the description); and when Ar2 is hydrogen, Ar1 is one of a formula, a formula, a formula or a formula (shown in the description). The preparation method comprises the steps of: starting from a formula (shown in the description, wherein X=br, and Y=H or X=H, and Y=Br) and tetraphenyl ethylene boric acid ester, obtaining derivatives of fluorene containing toluene and triphenylamine units by utilizing an acid-induced intramolecular dehydration reaction, linking tetraphenyl ethylene to a ninth site of the fluorine in a conjugated manner by utilizing a Suzuki reaction, and finally obtaining a target compound. According to the compound disclosed by the invention, the heat stability and the aggregation-induced emission property are good, the solid fluorescence quanta of the compound are high in yield and are emitted by blue lights, and the compound can be applied to a luminescent layer material of a blue-light inorganic light emitting diode; and the reaction conditions of the preparation method are mild, and the yield is high.

The invention discloses pyridoimidazole derivatives and application thereof in organic light-emitting devices (OLEDs). The structural formula of the compounds is shown in the formula I in the specification. As organic light-emitting materials, the compounds can be used for preparing the OLEDs. The OLEDs comprise light-emitting layers, wherein the light-emitting layers contain at least a pyridoimidazole derivative to serve as the main material and contain pyridoimidazole derivatives or a light-emitting layer formed by the pyridoimidazole derivatives, pyridoimidazole derivatives or an electron transport layer formed by the pyridoimidazole derivatives and pyridoimidazole derivatives or a hole blocking layer formed by the pyridoimidazole derivatives. The invention further relates to equipment comprising the OLEDs. The pyridoimidazole derivatives provided by the invention have appropriate triplet energy levels and obviously improve energy utilization, and when the pyridoimidazole derivatives are used for preparing the OLEDs, the prepared devices have satisfactory brightness, current density and efficiency under high current density.

The invention discloses a nanocomposite material, a preparation method and a semiconductor device. The method comprises the steps of: adding one or more cation precursors at predetermined positions in the radial direction; adding one or more cation precursors simultaneously under certain conditions the anion precursor, the cationic precursor reacts with the anion precursor to form a nanocomposite material, and the luminescence peak wavelength of the nanocomposite material appears one or more of blue-shift, red-shift and unchanged during the reaction , so as to achieve the alloy composition distribution at the predetermined position. The nanocomposite material prepared by the above preparation method not only achieves a more efficient luminous efficiency of the nanocomposite material, but also better meets the comprehensive performance requirements of the semiconductor device and the corresponding display technology for the nanocomposite material. Ideal quantum dot luminescent material for display technology.

The invention discloses a film, a preparation method thereof, and a QLED device. The film comprises a gradual change layer formed by a first metal layer, a first dielectric layer, a second dielectricand second metal which are stacked. The mass concentration of the second dielectric is gradually decreased along the thickness direction of the gradual change layer. The film has the following advantages: (1) the free electrons on the surface of the second metal interact with the photons emitted by a light-emitting layer to generate a surface plasmon propagating along the surface of the second metal, the surface plasmon may generate an electric field and resonates with an electromagnetic wave emitted by the light-emitting layer so as to enhance the light-emitting intensity and promote the composite light-emitting efficiency; and (2) a sudden change interface forms new SPE resonance having a resonance mode exactly orthogonal to the gradual change, which not only limits the diffusion of thegradual change SPE, but also provides part of the energy for the SPE so that the SPE resonance is enhanced. The film is introduced into the QLED device so as to achieve an effect of enhancing the light emission of the QLED device.

The present invention discloses a luminescent material with a funnel-type energy level structure, a preparation method and a semiconductor device, wherein the luminescent material comprises N quantum dot structural units sequentially arranged in the radial direction, wherein N≥2; the quantum The point structure units include A1 and A2 types, the A1 type is a graded alloy composition structure with a wider energy level width in the radial direction; the A2 type is a uniform composition structure with a uniform energy level width in the radial direction ; The interior of the luminescent material is composed of at least one layer of A1 type quantum dot structural units, and the outside of the luminescent material is composed of at least one layer of A2 type quantum dot structural units; Adjacent quantum dot structures in the radial direction In the unit, the energy level width of the quantum dot structural unit near the center of the luminescent material is not greater than the energy level width of the quantum dot structural unit far from the center of the luminescent material; and the energy level of the quantum dot structural unit of the adjacent graded alloy composition structure is continuously.

The invention discloses a film, a preparation method thereof, and a QLED device. The film comprises a first dielectric layer composed of a first dielectric, a first metal layer composed of first metal, and a gradual change layer formed by second metal and a second dielectric, wherein the first dielectric layer, the first metal layer, and the gradual change layer are stacked. The mass concentrationof the second dielectric is gradually increased in a direction from the first metal layer to a side away from the first metal layer. In the film of the present invention, the lower surface of the first metal layer and the first dielectric layer form a sudden change interface, and the second metal and the second gradual change layer form a gradual change interface. Both sides of the metal may generate a SPE effect. By adjusting the metal and the dielectric, the two SPEs can be coupled together to achieve an enhancing effect. The film is introduced into the QLED device so as to achieve an effect of enhancing the light emission of the QLED device.

The invention particularly relates to polyaryl-substituted pyridine derivative, a synthetic method thereof and the application of the polyaryl-substituted pyridine derivative to preparation of organic electroluminescent devices, belonging to the field of electroluminescent material. According to molecular design, large substitutional groups with rigid structures are introduced, so that the derivative has small possibility of forming the exciplex, the crystallization process of the derivative is inhibited, the film forming property of the derivative is improved, and the electric charge transmission property of the derivative is improved. Meanwhile, the modular coplanarity is damaged to cause emission peak hypochromatic shift, and the purpose of improving device property is achieved. The polyaryl-substituted pyridine derivative comprises the following structure.