37results about How to "Efficient luminous efficiency" patented technology

The invention belongs to the field of organic electroluminescent material, and in particular relates to polyaryl substituted pyridine derivatives and a synthetic method thereof, as well as application to preparing organic electroluminescent devices by using materials of the polyaryl substituted pyridine derivatives. Through molecular design, the synthetic method introduces large substituting groups which have rigid structures to ensure that the large substituting groups are not easy to form a group excited compound, inhibits the crystallization processes of the large substituting groups, improves the film forming properties of the large substituting groups, and increases charge transfer performances of the large substituting groups; at the same time, destroy of molecular co-planarity makes the large substituting groups emit peak blue shift, so as to achieve the aim of improving the properties of the devices. The polyaryl substituted pyridine derivatives comprise a structural formula as above.

The present invention discloses a nanocrystal with a quantum well energy level structure and a preparation method thereof, and a semiconductor device. The nanocrystal comprises S central structural units located at the center of the nanocrystal and N surrounding structure units arranged in order located at the outer side of the center of the nanocrystal, wherein S is not smaller than 1, and the N is not smaller than 1, the central structural units and the surrounding structure units are the quantum dot structural units, and are the gradually changing structures with energy level width changing in the vertical direction or the uniform component structures with the consistent energy level width in the vertical direction. The novel nanocrystal provided by the invention can realize the higher-efficiency nanocrystal luminous efficiency and satisfy the integrated performance requirement of the semiconductor device and the corresponding display technology for the nanocrystal, and is the ideal nanocrystal material being suitable for the semiconductor device and the display technology.

The invention discloses a preparation method and application of a piezochromic material, and the gather induction properties and the amplified spontaneous emission properties of the material are studied. A high-efficiency electroluminescent device is prepared; the novel piezochromic material is high in light-emitting efficiency of nearly 100%; the material can respond to the external pressure of 7.20 GPa, the light-emitting peak can be moved to 530 nm from 467 nm, and the change of light color and luminous intensity is larger; the pressure and the peak change form a good linear relation, and the piezochromic material is reversible and loss-free; the crystals of the material have the amplified spontaneous emission properties, the half-peak width of a spectrum is reduced to 10 nm from 41 nm along with the increment of pump energy, the spectral intensity is nonlinearly changed along with the increment of pump energy, and the threshold value is 2086 Kw*cm<-2>. The material is applied to organic electroluminescence devices, high-efficiency electroluminescence performance can be obtained, and the obtained maximum current efficiency is 3.13 cd/A.

The invention discloses pyridoimidazole derivatives and application thereof in organic light-emitting devices (OLEDs). The structural formula of the compounds is shown in the formula I in the specification. As organic light-emitting materials, the compounds can be used for preparing the OLEDs. The OLEDs comprise light-emitting layers, wherein the light-emitting layers contain at least a pyridoimidazole derivative to serve as the main material and contain pyridoimidazole derivatives or a light-emitting layer formed by the pyridoimidazole derivatives, pyridoimidazole derivatives or an electron transport layer formed by the pyridoimidazole derivatives and pyridoimidazole derivatives or a hole blocking layer formed by the pyridoimidazole derivatives. The invention further relates to equipmentcomprising the OLEDs. The pyridoimidazole derivatives provided by the invention have appropriate triplet energy levels and obviously improve energy utilization, and when the pyridoimidazole derivatives are used for preparing the OLEDs, the prepared devices have satisfactory brightness, current density and efficiency under high current density.

The invention discloses a light-emitting material with funnel-type energy level structure, a preparation method and a semiconductor device, wherein the light-emitting material comprises N quantum dotstructural units arranged sequentially in the radial direction, with N>/=2; the quantum dot structural units include type A 1 and type A2; the type A1 is gradient alloy component structure having energy level width that widens to the outside in the radial direction; the type A2 is homogenous component structure having the energy level width that is uniform in the radial direction; the light-emitting material is internally composed of at least one layer of type A1 quantum dot structural units and is externally composed of at least one layer of type A2 quantum dot structural units; in the quantum dot structural units adjacent in the radial direction, the energy level width of the quantum dot structural unit close to the center of the light-emitting material is not greater than that of the quantum dot structural units far away from the center of the light-emitting material; the gradient quantum dot structural units of gradient alloy component structure have continuous energy levels.

The invention discloses quinolone derivatives and preparation method and application thereof. The structural formula of the compounds is shown in the formula I in the specification. As organic light-emitting materials, the compounds can be used for preparing organic light-emitting devices (OLEDs). The OLEDs comprise light-emitting layers, wherein the light-emitting layers contain at least a quinolone derivative to serve as the main material and contain quinolone derivatives or a light-emitting layer formed by the quinolone derivatives, quinolone derivatives or an electron transport layer formed by the quinolone derivatives and quinolone derivatives or a hole blocking layer formed by the quinolone derivatives. The invention further relates to equipment comprising the OLEDs. The quinolone derivatives provided by the invention have appropriate triplet energy levels and obviously improve energy utilization, and when the quinolone derivatives are used for preparing the OLEDs, the prepared devices have satisfactory brightness, current density and efficiency under high current density. The formula I is shown in the specification.

The invention discloses a nanocomposite material, a manufacturing method and a semiconductor device. The method comprises the following steps of adding one or more cationic precursors at a predetermined position in a radial direction; under a certain condition, simultaneously adding one or more anionic precursors so that the cationic precursors and the anionic precursors carry out reaction so as to form the nanocomposite material; and during a reaction process, generating one or more conditions of blue shift, red shift and invariability by the luminous peak wavelength of the nanocomposite material, and then realizing alloy component distribution at the predetermined position. Through the nanocomposite material manufactured by the manufacturing method, high-efficiency nanocomposite materialluminescence efficiency is realized, simultaneously the comprehensive property requirements of the semiconductor device and a corresponding display technology to the nanocomposite material can be satisfied, and the nanocomposite material is an ideal quantum dot luminescent material suitable for the semiconductor device and the display technology.

The invention provides a compound shown in general formula (I), wherein L is selected from single bond, C6-C30 substituted or unsubstituted aryl and C3-C30 substituted or unsubstituted heteroaryl; R is hydrogen, C1-C20 alkyl, C6-C30 substituted or unsubstituted aryl, C3-C30 substituted or unsubstituted heteroaryl and disubstituted amino. The invention further provides an OLED comprising the compound.

The invention particularly relates to polyaryl-substituted pyridine derivative, a synthetic method thereof and the application of the polyaryl-substituted pyridine derivative to preparation of organic electroluminescent devices, belonging to the field of electroluminescent material. According to molecular design, large substitutional groups with rigid structures are introduced, so that the derivative has small possibility of forming the exciplex, the crystallization process of the derivative is inhibited, the film forming property of the derivative is improved, and the electric charge transmission property of the derivative is improved. Meanwhile, the modular coplanarity is damaged to cause emission peak hypochromatic shift, and the purpose of improving device property is achieved. The polyaryl-substituted pyridine derivative comprises the following structure.

The invention discloses the application of quinolone derivatives represented by formula I as emission materials in the preparation of organic electroluminescent devices, especially the application in the preparation of white light organic electroluminescent devices. The general structural formula of the compound is shown in Formula I. This type of compound is used as an emission material for an organic light-emitting layer of an organic electroluminescent device, and further relates to an organic electroluminescent device comprising a light-emitting layer, the light-emitting layer containing at least one quinolone derivative shown in formula I as an emission material, and containing a quinolone Derivatives or an electron transport layer composed of them, a hole blocking layer containing quinolone derivatives or composed of them; and a device comprising the organic electroluminescent device of the present invention. The quinolone derivatives provided by the present invention have suitable triplet energy levels, and the energy utilization is significantly improved. When used in the preparation of organic electroluminescent devices, the manufactured devices are obtained in terms of brightness, current density and efficiency at high current densities. a satisfactory result. Formula I

The invention discloses a quantum dot composition and a preparation method thereof, wherein the quantum dot composition comprises quantum dots and a medium, the quantum dot comprises a quantum dot core, a metal layer covering the quantum dot core, and a semiconductor shell layer covering the metal layer, and the metal element in the metal layer is one or a plurality of elements selected from Zn, Hg, Al, Ga and In. According to the present invention, the semiconductor core-shell quantum dot having the metal layer is used as the quantum dot light-emitting material in the quantum dot composition,wherein the metal layer can enhance the light emitting efficiency of the quantum dot, and can enhance the light emitting efficiency and the size uniformity of the quantum dot; and the quantum dots can achieve the good performance of the quantum dot composition due to the efficient light emitting efficiency so as to well meet the comprehensive performance requirements on quantum dot materials in semiconductor applications, such that the product is the ideal quantum dot light emitting material suitable for semiconductor devices and display technologies.

The invention discloses a film, a preparation method thereof, and a QLED device. The film comprises a gradual change layer formed by a first metal layer, a first dielectric layer, a second dielectricand second metal which are stacked. The mass concentration of the second dielectric is gradually decreased along the thickness direction of the gradual change layer. The film has the following advantages: (1) the free electrons on the surface of the second metal interact with the photons emitted by a light-emitting layer to generate a surface plasmon propagating along the surface of the second metal, the surface plasmon may generate an electric field and resonates with an electromagnetic wave emitted by the light-emitting layer so as to enhance the light-emitting intensity and promote the composite light-emitting efficiency; and (2) a sudden change interface forms new SPE resonance having a resonance mode exactly orthogonal to the gradual change, which not only limits the diffusion of thegradual change SPE, but also provides part of the energy for the SPE so that the SPE resonance is enhanced. The film is introduced into the QLED device so as to achieve an effect of enhancing the light emission of the QLED device.

The invention discloses an alloy material possessing a quantum well energy level structure, a manufacturing method and a QLED. The alloy material contains N structure units which are successively arranged along a radial direction, wherein the N is greater than or equal to 1. Each structural unit is a graded alloy component structure in which an energy level width becomes wider from inside to outside in the radial direction. The energy level widths of the adjacent structure units are not continuous. The invention provides the novel alloy material having a mutated alloy component along the radial direction from the inside to the outside. High-efficient luminescence efficiency is realized, simultaneously the comprehensive property requirements of a QLED device and a corresponding display technology to the alloy material can be satisfied. The material is an ideal alloy material suitable for the QLED device and the display technology.

The invention discloses a film, a preparation method thereof, and a QLED device. The film comprises a first dielectric layer composed of a first dielectric, a first metal layer composed of first metal, and a gradual change layer formed by second metal and a second dielectric, wherein the first dielectric layer, the first metal layer, and the gradual change layer are stacked. The mass concentrationof the second dielectric is gradually increased in a direction from the first metal layer to a side away from the first metal layer. In the film of the present invention, the lower surface of the first metal layer and the first dielectric layer form a sudden change interface, and the second metal and the second gradual change layer form a gradual change interface. Both sides of the metal may generate a SPE effect. By adjusting the metal and the dielectric, the two SPEs can be coupled together to achieve an enhancing effect. The film is introduced into the QLED device so as to achieve an effect of enhancing the light emission of the QLED device.

The invention discloses a perovskite light emitting diode device, a preparation method thereof and a display device. The perovskite light emitting diode device includes: a first electrode; a second electrode; the perovskite light-emitting layer is arranged between the first electrode and the second electrode; the electron transport layer is arranged between the perovskite light-emitting layer and the second electrode; wherein the material of the electron transport layer comprises pyridine doped graphdiyne and a fullerene derivative. According to the perovskite light-emitting diode device, the electron transport layer is formed by matching the pyridine doped graphdiyne and the fullerene derivative, so that the interface defect of perovskite can be effectively passivated, the leakage current of the device can be effectively inhibited, the electron injection efficiency can be improved, and the high perovskite light-emitting efficiency can be realized.

The invention provides a quantum dot composite material. The quantum dot composite material quantum dot composite material comprises quantum dots, a thermally induced delayed fluorescence material and single-walled carbon nanohorns, and the single-walled carbon nanohorns and the quantum dots are combined on the surface of the thermally induced delayed fluorescence material. The quantum dot composite material provided by the invention improves the luminous efficiency of the quantum dots.

The structure of the bivalent platinum complex is shown as a formula (I). The complex has bright green light emission wavelength and can be applied to the field of OLED (organic light emitting diode) materials. Through structural design, the heavy atom effect of the phosphorescent material can be improved, spin coupling can be enhanced, and T1-S0 efficient conversion can be realized, so that efficient luminous efficiency is obtained. Meanwhile, the platinum complex molecule of the ONCN tetradentate ligand has the advantages of being simple in synthesis step, easy to coordinate and the like, has more modifiable sites, and can be used for adjusting the PL light-emitting wavelength and the thermal stability. Due to steric hindrance increased by carbazole groups, the aggregation effect among molecules can be effectively reduced, exciplexes are prevented from being formed, and the color purity and the luminous efficiency are further improved.