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Nanocomposite material, manufacturing method and semiconductor device

A nanocomposite material and semiconductor technology, applied in the field of preparation methods, semiconductor devices, and nanocomposite materials, can solve the problems that cannot meet the requirements of nanocomposite materials for semiconductor devices, and the luminous performance needs to be improved, so as to meet the requirements of comprehensive performance and high-efficiency luminescence efficiency effect

Active Publication Date: 2018-07-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a nanocomposite material, a preparation method and a semiconductor device, aiming at solving the problem that the luminescent performance of the quantum dot material prepared by the existing preparation method needs to be improved and cannot meet the requirements of the semiconductor device for nanometer Composite Material Requirements Questions

Method used

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  • Nanocomposite material, manufacturing method and semiconductor device
  • Nanocomposite material, manufacturing method and semiconductor device
  • Nanocomposite material, manufacturing method and semiconductor device

Examples

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Effect test

Embodiment 1

[0114] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots

[0115] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cdz Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.

Embodiment 2

[0116] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots

[0117] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd y Zn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1....

Embodiment 3

[0118] Embodiment 3: Preparation based on CdZnSe / CdZnSe quantum dots

[0119] The precursors of cation Cd, cation Zn and anion Se are injected into the reaction system first to form Cd y Zn 1-y Se layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion Se into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the Se layer z Zn 1-z Se layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals occurs; due to the limited migration distance of cations And the farther the migration distance is, the smaller the probability of migration will be, so it will be in Cd y Zn 1-y Se layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the Se layer, that is, Cd x Zn 1-x Se, where 0≤x≤1.

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Abstract

The invention discloses a nanocomposite material, a manufacturing method and a semiconductor device. The method comprises the following steps of adding one or more cationic precursors at a predetermined position in a radial direction; under a certain condition, simultaneously adding one or more anionic precursors so that the cationic precursors and the anionic precursors carry out reaction so as to form the nanocomposite material; and during a reaction process, generating one or more conditions of blue shift, red shift and invariability by the luminous peak wavelength of the nanocomposite material, and then realizing alloy component distribution at the predetermined position. Through the nanocomposite material manufactured by the manufacturing method, high-efficiency nanocomposite materialluminescence efficiency is realized, simultaneously the comprehensive property requirements of the semiconductor device and a corresponding display technology to the nanocomposite material can be satisfied, and the nanocomposite material is an ideal quantum dot luminescent material suitable for the semiconductor device and the display technology.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a nanocomposite material, a preparation method and a semiconductor device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in flat panel display, solid state lighting, photovoltaic solar energy, biomarkers and other fields. Especially in flat panel display applications, quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have made great progress in display image quality, device performance, and m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/00H01L33/26B82Y40/00
CPCB82Y40/00H01L33/005H01L33/04H01L33/26
Inventor 杨一行刘政钱磊
Owner TCL CORPORATION
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