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Thin film and its preparation method and qled device

A technology for thin films and devices, applied in the field of thin films and their preparation, can solve the problem that the luminous efficiency of QLED devices needs to be improved, and achieve the effect of satisfying comprehensive performance requirements and high luminous efficiency

Active Publication Date: 2021-01-12
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a thin film and its preparation method and a QLED device, aiming to solve the problem that the luminous efficiency of the existing QLED device still needs to be improved

Method used

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  • Thin film and its preparation method and qled device
  • Thin film and its preparation method and qled device
  • Thin film and its preparation method and qled device

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preparation example Construction

[0077] The present invention also provides a preferred embodiment of a thin film preparation method, which includes the steps of:

[0078] preparing the first dielectric layer;

[0079] preparing a first metal layer on the first dielectric layer;

[0080] Coating a blend solution of the second medium and the second metal on the first metal layer, and preparing a graded layer formed by the second metal and the second medium on the first metal layer under heating conditions;

[0081] From a position close to the first metal layer to a direction away from the first metal layer, the mass concentration of the second medium in the graded layer increases from low to high.

[0082] The present invention also provides a preferred embodiment of a thin film preparation method, which includes the steps of:

[0083] Coating a blend solution of the first medium and the first metal on the substrate, and preparing a first graded layer formed by the first metal and the first medium under hea...

Embodiment 1

[0095] The preparation steps of the QLED device are as follows:

[0096] Evaporate a layer of 20nm TiO on the glass ITO substrate x ;

[0097] Then mix 10mg of zinc acetate dihydrate and 2mL of methoxyethanol, heat at 60°C for 30min, add 200μL of ethanolamine, and heat at 60°C for 30min. Add 2 mg of nano-Ag, keep it for 30 minutes without heating, and let it stand for 24 hours to obtain a mixed solution. The mixed solution was spin-coated and heated at 80° C. for 30 min to form a thin film.

[0098] Preparation of QD (20nm), TAPC (40nm), MoO in sequence on the thin film x (4nm) and Ag to obtain a QLED device whose intensity is shown in Figure 4 .

Embodiment 2

[0100] The preparation steps of the QLED device are as follows:

[0101] Prepare a mixed solution: mix 10 mg of zinc acetate dihydrate and 2 mL of methoxyethanol, heat at 60°C for 30 minutes; add 200 μL of ethanolamine, and heat at 60°C for 30 minutes. Add 2mg of nano-Ag, keep it for 30min without heating, and let it stand for 24hr.

[0102] The above mixed solution was spin-coated on a glass ITO substrate, and heated at 80° C. for 3 min. Move it into a vacuum chamber, evacuate to 1000Pa, flush into Ar, and keep it for 30min;

[0103] Then sputter a layer of 20nm TiO to form a thin film.

[0104] QD (20nm), TAPC (40nm), MoOx (4nm) and Ag are sequentially prepared on the film to obtain a QLED device. The intensity of the QLED device is shown in Figure 4 .

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Abstract

The invention discloses a film, a preparation method thereof, and a QLED device. The film comprises a first dielectric layer composed of a first dielectric, a first metal layer composed of first metal, and a gradual change layer formed by second metal and a second dielectric, wherein the first dielectric layer, the first metal layer, and the gradual change layer are stacked. The mass concentrationof the second dielectric is gradually increased in a direction from the first metal layer to a side away from the first metal layer. In the film of the present invention, the lower surface of the first metal layer and the first dielectric layer form a sudden change interface, and the second metal and the second gradual change layer form a gradual change interface. Both sides of the metal may generate a SPE effect. By adjusting the metal and the dielectric, the two SPEs can be coupled together to achieve an enhancing effect. The film is introduced into the QLED device so as to achieve an effect of enhancing the light emission of the QLED device.

Description

technical field [0001] The invention relates to the field of QLED devices, in particular to a thin film, a preparation method thereof and a QLED device. Background technique [0002] Surface plasma enhancement (SPE) is another fascinating property of inorganic nanomaterials. For example, for coin family metals, such as silver, gold, and copper, the monomers in the nanometer size will resonate with the excitation of external electromagnetic waves of specific wavelengths to achieve the effect of enhancing the signal. The same can be applied to photoelectric conversion devices. For example, for light-emitting display diodes, the surface enhancement effect brought by nano-gold particles can be used to amplify the light emitted by semiconductor materials, thereby improving luminous efficiency. At the same time, gold nanoparticles can also be dispersed in a solvent system to facilitate subsequent processing such as spin coating, spray coating, and inkjet printing. [0003] The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
Inventor 向超宇邓天旸李乐张滔辛征航张东华
Owner TCL CORPORATION
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