Luminescent material and preparation method thereof and semiconductor device
A technology of luminescent materials and semiconductors, applied in the field of quantum dots, can solve the problems that cannot meet the requirements of luminescent materials of semiconductor devices, and the luminous performance needs to be improved, so as to achieve the effect of meeting the comprehensive performance requirements and high luminous efficiency
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Embodiment 1
[0100] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots
[0101] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cd z Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.
Embodiment 2
[0102] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots
[0103] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd y Zn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1....
Embodiment 3
[0104] Embodiment 3: Preparation based on CdZnSe / CdZnSe quantum dots
[0105] The precursors of cation Cd, cation Zn and anion Se are injected into the reaction system first to form Cd y Zn 1-y Se layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion Se into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the Se layer z Zn 1-z Se layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals occurs; due to the limited migration distance of cations And the farther the migration distance is, the smaller the probability of migration will be, so it will be in Cd y Zn 1-y Se layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the Se layer, that is, Cd x Zn 1-x Se, where 0≤x≤1.
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