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Quantum dot composition and preparation method thereof

A technology of quantum dots and compositions, applied in the field of quantum dots, can solve the problems of poor performance of quantum dot compositions, achieve the effects of improving luminous efficiency and size uniformity, reducing surface defects, and high luminous efficiency

Pending Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot composition and its preparation method, aiming to solve the problem of poor performance of the existing quantum dot composition based on cadmium-free quantum dot materials

Method used

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  • Quantum dot composition and preparation method thereof

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Effect test

Embodiment I

[0136] The preparation of the InP quantum dot core of this embodiment comprises the following steps:

[0137] Add 0.14 mmol of indium acetate, 0.6 mmol of oleic acid and 20 g of octadecene into a 100 mL three-necked flask, and exhaust at 150 degrees Celsius for 30 minutes to remove water and oxygen in the reaction system;

[0138] After the reaction system is filled with argon, the temperature is raised to 250 degrees Celsius;

[0139] Quickly inject 0.1 mmol P(TMS) into the reaction system 3 (Tri(trimethylsilyl)phosphine) and 2 mL of octadecene were reacted at 250 degrees Celsius for 20 minutes to obtain InP quantum dot cores.

Embodiment 2

[0141] The preparation of the InPZnS quantum dot nucleus of this embodiment comprises the following steps:

[0142] Add 0.18 mmol of indium chloride, 1 mL of tetrahydrofuran, 1 mmol of zinc acetate, 0.6 mL of oleic acid, and 9 mL of octadecene into a 100 mL three-neck flask, and ventilate at 150 °C for 30 minutes to remove water in the reaction system and oxygen;

[0143] After the reaction system is filled with argon, the temperature is raised to 280 degrees Celsius;

[0144] Quickly inject 0.06 mmol P(TMS) into the reaction system 3 (Tri(trimethylsilyl)phosphine), 0.4 mmol sulfur, 0.5 mL trioctylphosphine (TOP) and 0.5 mL octadecene, and reacted at 280 °C to obtain InPZnS quantum dot cores.

[0145] InPZnS quantum dot cores with different luminous wavelengths and luminous intensities can be obtained according to the reaction time. For example, the luminous wavelength of the InPZnS quantum dot core obtained after 20 seconds of reaction is 504 nm, and the luminous efficiency...

Embodiment 3

[0147] The preparation of the InPZnSe quantum dot nucleus of this embodiment comprises the following steps:

[0148] Add 0.16 mmol of indium chloride, 1 mL of tetrahydrofuran, 1 mmol of zinc acetate, 0.6 mL of oleic acid, and 9 mL of octadecene into a 100 mL three-neck flask, and ventilate at 150 °C for 30 minutes to remove water in the reaction system and oxygen;

[0149] After the reaction system is filled with argon, the temperature is raised to 300 degrees Celsius;

[0150] Quickly inject 0.12 mmol P(TMS) into the reaction system 3 (Tri(trimethylsilyl)phosphine), 0.02 mmol selenium, 0.5 mL trioctylphosphine (TOP) and 0.5 mL octadecene, and react at 300 degrees Celsius to obtain InPZnSe quantum dot cores.

[0151] InPZnSe quantum dot cores with different luminous wavelengths and luminous intensities can be obtained according to the reaction time. For example, the luminous wavelength of InPZnSe quantum dot cores obtained after 20 seconds of reaction is 503 nm, and the lumi...

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Abstract

The invention discloses a quantum dot composition and a preparation method thereof, wherein the quantum dot composition comprises quantum dots and a medium, the quantum dot comprises a quantum dot core, a metal layer covering the quantum dot core, and a semiconductor shell layer covering the metal layer, and the metal element in the metal layer is one or a plurality of elements selected from Zn, Hg, Al, Ga and In. According to the present invention, the semiconductor core-shell quantum dot having the metal layer is used as the quantum dot light-emitting material in the quantum dot composition,wherein the metal layer can enhance the light emitting efficiency of the quantum dot, and can enhance the light emitting efficiency and the size uniformity of the quantum dot; and the quantum dots can achieve the good performance of the quantum dot composition due to the efficient light emitting efficiency so as to well meet the comprehensive performance requirements on quantum dot materials in semiconductor applications, such that the product is the ideal quantum dot light emitting material suitable for semiconductor devices and display technologies.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot composition and a preparation method thereof. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in biomarkers, flat panel displays, solid-state lighting, photovoltaic solar energy and other fields. [0003] The size of quantum dots is usually below 20 nanometers, so the specific surface area of ​​quantum dot materials is very large, and the surface characteristics and properties of quantum dots have a significant impact on the pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00B82Y40/00
Inventor 杨一行聂志文
Owner TCL CORPORATION
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