Alloy material possessing quantum well energy level structure, manufacturing method and semiconductor device
An alloy material and energy level structure technology, applied in the field of quantum dots, can solve the problems of inability to meet the requirements of semiconductor devices and the luminous performance needs to be improved, and achieve the effect of meeting the comprehensive performance requirements and high luminous efficiency
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[0069] The present invention also provides a method for preparing the above-mentioned alloy material, which comprises the steps of:
[0070] Synthesizing a first compound at a predetermined location;
[0071] synthesizing a second compound on the surface of the first compound, the alloy composition of the first compound and the second compound being the same or different;
[0072] A cation exchange reaction occurs between the first compound and the second compound to form an alloy material, and the luminescence peak wavelength of the alloy material has intermittent blue shift.
[0073] The preparation method of the present invention combines the quantum dot SILAR synthesis method with the quantum dot one-step synthesis method to generate alloy materials, specifically, the quantum dots are grown layer by layer and the quantum dot one-step synthesis method is used to form a transition shell with a gradual composition. That is to say, two compound thin layers with the same or di...
Embodiment 1
[0100] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots
[0101] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cd z Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.
Embodiment 2
[0102] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots
[0103] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd y Zn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1....
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