Nanocrystal with quantum well energy level structure, preparation method and semiconductor device

A nanocrystal and energy level structure technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, nano optics, etc., can solve the problems that the luminous performance needs to be improved, cannot meet the requirements of nanocrystals of semiconductor devices, and meet the comprehensive performance requirements , Efficient luminous efficiency effect

Active Publication Date: 2019-03-19
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide nanocrystals with quantum well level structures, preparation methods and semiconductor devices, aiming to solve the problem that the existing nanocrystals need to improve their luminous performance and cannot meet the needs of semiconductor devices for nanometers. Crystal Requirements Questions

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  • Nanocrystal with quantum well energy level structure, preparation method and semiconductor device
  • Nanocrystal with quantum well energy level structure, preparation method and semiconductor device
  • Nanocrystal with quantum well energy level structure, preparation method and semiconductor device

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preparation example Construction

[0090] The present invention also provides a method for preparing nanocrystals as described above, which includes the steps of:

[0091] Synthesizing a first compound at a predetermined location;

[0092] Synthesizing a second compound on the surface of the first compound, the alloy composition of the first compound and the second compound being the same or different;

[0093] A cation exchange reaction occurs between the first compound and the second compound to form nanocrystals, and one or more of blue-shifted, red-shifted and unchanged luminescence peak wavelengths of the nanocrystals appear.

[0094]The preparation method of the present invention combines the quantum dot SILAR synthesis method with the quantum dot one-step synthesis method to generate nanocrystals, specifically, the quantum dots are grown layer by layer and the quantum dot one-step synthesis method is used to form a transition shell with gradient components. That is to say, two compound thin layers with ...

Embodiment 1

[0121] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots

[0122] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cd z Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.

Embodiment 2

[0123] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots

[0124] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd y Zn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1....

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Abstract

The present invention discloses a nanocrystal with a quantum well energy level structure and a preparation method thereof, and a semiconductor device. The nanocrystal comprises S central structural units located at the center of the nanocrystal and N surrounding structure units arranged in order located at the outer side of the center of the nanocrystal, wherein S is not smaller than 1, and the N is not smaller than 1, the central structural units and the surrounding structure units are the quantum dot structural units, and are the gradually changing structures with energy level width changing in the vertical direction or the uniform component structures with the consistent energy level width in the vertical direction. The novel nanocrystal provided by the invention can realize the higher-efficiency nanocrystal luminous efficiency and satisfy the integrated performance requirement of the semiconductor device and the corresponding display technology for the nanocrystal, and is the ideal nanocrystal material being suitable for the semiconductor device and the display technology.

Description

technical field [0001] The invention relates to the field of nano crystals, in particular to nano crystals with a quantum well energy level structure, a preparation method and a semiconductor device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in flat panel display, solid state lighting, photovoltaic solar energy, biomarkers and other fields. Especially in flat panel display applications, quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have made great progress in display image q...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/28H01L33/18H01L33/06H01L33/00H01L21/02B82Y20/00
CPCB82Y20/00H01L21/02557H01L21/0256H01L21/02628H01L33/0083H01L33/06H01L33/18H01L33/28
Inventor 杨一行刘政向超宇钱磊
Owner TCL CORPORATION
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