Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device

A technology of luminescent material and energy level structure, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, luminescent materials, etc., can solve the problems that cannot meet the requirements of luminescent materials of semiconductor devices, and the luminescent performance needs to be improved, so as to meet the comprehensive performance requirements. , the effect of high luminous efficiency

Active Publication Date: 2018-07-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a luminescent material with a funnel-shaped energy level structure, a preparation method and a semiconductor device, aiming to solve the problem that the luminescent performance of the existing luminescent material needs to be improved and cannot meet the requirements of semiconductor devices for luminescence. material requirements

Method used

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  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device
  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device
  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device

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Experimental program
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Effect test

Embodiment 1

[0102] Embodiment 1: Preparation based on CdZnSeS / CdZnSeS quantum dots

[0103] The precursors of cation Cd, cation Zn, anion Se and anion S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b Layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursors of cation Cd, cation Zn, anion Se and anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd and The exchange of Zn ions; because the migration distance of cations is limited and the probability of migration is smaller the farther the migration distance is, so it will be in Cd y Zn 1-y Se b S 1-b layer with Cd z Zn 1-z Se c S 1-c A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the layer, that is, Cd x Zn 1-x Se a S 1-a , where 0≤x≤1, 0≤a≤1.

Embodiment 2

[0104] Embodiment 2: Preparation based on CdZnS / CdZnS quantum dots

[0105] The precursors of cation Cd, cation Zn and anion S are injected into the reaction system to form Cd yZn 1-y S layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion S into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compound) occurs ; Since the migration distance of cations is limited and the farther the migration distance is, the probability of migration is smaller, so the Cd y Zn 1-y S layer and Cd z Zn 1-z A gradual alloy composition distribution of Cd content and Zn content is formed near the interface of the S layer, that is, Cd x Zn 1-x S, where 0≤x≤1. ...

Embodiment 3

[0106] Embodiment 3: Preparation based on CdZnSe / CdZnSe quantum dots

[0107] The precursors of cation Cd, cation Zn and anion Se are injected into the reaction system first to form Cd y Zn 1-y Se layer (where 0≤y≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn and the precursor of anion Se into the reaction system, the above Cd y Zn 1-y Cd formed on the surface of the Se layer z Zn 1-z Se layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals occurs; due to the limited migration distance of cations And the farther the migration distance is, the smaller the probability of migration will be, so it will be in Cd y Zn 1-y Se layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content is formed near the interface of the Se layer, that is, Cd x Zn 1-x Se, where 0≤x≤1.

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Abstract

The invention discloses a light-emitting material with funnel-type energy level structure, a preparation method and a semiconductor device, wherein the light-emitting material comprises N quantum dotstructural units arranged sequentially in the radial direction, with N>/=2; the quantum dot structural units include type A 1 and type A2; the type A1 is gradient alloy component structure having energy level width that widens to the outside in the radial direction; the type A2 is homogenous component structure having the energy level width that is uniform in the radial direction; the light-emitting material is internally composed of at least one layer of type A1 quantum dot structural units and is externally composed of at least one layer of type A2 quantum dot structural units; in the quantum dot structural units adjacent in the radial direction, the energy level width of the quantum dot structural unit close to the center of the light-emitting material is not greater than that of the quantum dot structural units far away from the center of the light-emitting material; the gradient quantum dot structural units of gradient alloy component structure have continuous energy levels.

Description

technical field [0001] The invention relates to the field of luminescent materials, in particular to a luminescent material with a funnel-shaped energy level structure, a preparation method and a semiconductor device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in flat panel display, solid state lighting, photovoltaic solar energy, biomarkers and other fields. Especially in flat panel display applications, quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have made great progress ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/56C09K11/02H01L51/50B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/02C09K11/565C09K11/883B82Y20/00B82Y30/00B82Y40/00H10K50/115
Inventor 刘政杨一行钱磊
Owner TCL CORPORATION
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