Growth method of organic monocrystal micro-strip P-N heterojunction array

Abstract

The invention provides a growth method of an organic monocrystal micro-strip P-N heterojunction array. The method comprises the steps that a substrate is provided, and photoetching is conducted on thesubstrate to obtain a negative photoresist array; the negative photoresist array is modified through a hydrophobic monomolecular layer solution to obtain a photoresist template; the photoresist template is vertically soaked into an N type material solution till the photoresist template is completely immersed into the N type material solution, then the photoresist template is taken out, and an N type monocrystal micro-strip is formed on the photoresist template; the photoresist template is vertically soaked into a P type material solution till the photoresist template is completely immersed into the P type material solution, then the photoresist template is taken out to form a P type monocrystal micro-strip on the photoresist template, and then the organic monocrystal micro-strip P-N heterojunction array is formed. The prepared micro-strip P-N heterojunction array is a monocrystal material, and accurate orientation growth of P-N heterojunctions of an up-down stacked structure can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing an organic single crystal microribbon P-N heterojunction array. Background technique [0002] Organic single-crystal semiconductors have a highly ordered molecular arrangement, a structural feature that gives them high carrier mobility, so they have a wide range of potential applications in organic circuits. Currently, there are various methods for patterning or arraying organic single crystals, such as inkjet printing, solution coating, and template self-assembly. It has been reported that the mobility of organic single crystals patterned or arrayed by these methods can exceed 10 cm 2 V -1 the s -1 . However, most of these organic materials only have unipolar properties such as P-type or N-type, which affects their application in complementary metal-oxide-semiconductor circuits (CMOS circuits) and new devices such as light-emitting transistors. ...

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