11 results about "Microribbon" patented technology

The present application relates to a kind of micro nuclear magnetic resonance probe and nucleic acid, antibody nuclear magnetic resonance detection method.Micro nuclear magnetic resonance probe includes the parallel arrangement of first plane shimming coil, nuclear magnetic resonance micro coil chip, digital microfluidic chip and second plane shimming coil in sequence, digital microfluidic chip is single pole plate form, the microstrip of medium substrate on nuclear magnetic resonance micro coil chip is annular microstrip coil, nuclear magnetic resonance micro coil chip and digital microfluidic chip are spaced apart.There is beneficial effect: through digital microfluidic chip control droplet, with simple structure, easy integration advantage;Annular microstrip coil can generate a uniform B1 field that matches the shape of droplet, can improve the filling factor of trace sample droplet;Nucleic acid, antibody modified magnetic particle probe can enhance nuclear magnetic resonance detection sensitivity, by quantitative analysis the change amount of relaxation time and the concentration of target detection substance, nucleic acid, antibody quantitative detection can be realized.

The utility model discloses a threaded installation connector, which comprises an inner conductor, an insulator and an outer conductor, the inner conductor, the insulator and the outer conductor are sequentially arranged from inside to outside, the left end of the connector is a standard SMP pin type interface, and the right end of the connector is the inner conductor connected with a printed board. According to the utility model, the frictional resistance between the micro-strip and the metalized via hole is small, the plugging force is soft, and the assembly and disassembly are convenient; according to the utility model, relative rotation between adjacent parts of the inner conductor, the insulator and the outer conductor is not caused, so that risks of loosening and structure failure between the parts are avoided. The threaded installation connector can be reliably connected with a metalized through hole and is convenient to install and disassemble, and the assembling efficiency of a whole machine system is greatly improved.

The utility model discloses a microstrip circulator welding tool easy to assemble, which comprises a base, an upper cover plate and a pressing block plate which are sequentially arranged from bottom to top, the base is provided with a plurality of circulator grooves which are distributed in a matrix mode, the upper cover plate is provided with rectangular hole grooves which are the same as the circulator grooves in size, number and distribution, and the pressing block plate is arranged on the upper cover plate. The pressing block plate is provided with pressing blocks which are the same as circulator grooves in size, number and distribution, the four corners of the base, the four corners of the upper cover plate and the four corners of the pressing block plate are provided with pin holes which coincide in position, and the base, the upper cover plate and the pressing block plate are fixedly connected through matching of pins and the pin holes. The assembling process, the number of parts and operation steps are simplified, the weight of the tool is light, heat dissipation is even and rapid, the batch welding efficiency of circulators is improved, and the welding precision and quality of products are improved.

The invention relates to a thermally-induced anisotropic conductive film and a preparation technology thereof, and belongs to the technical field of new material preparation. The method comprises the following four steps: (1) preparing VO2 (M) by combining hydrothermal and high-temperature roasting; (2) synthesizing polymethyl methacrylate (PMMA) by a bulk polymerization method; (3) preparing a spinning solution; and (4) preparing the [PMMA] / / [VO2 / PMMA] Janus micro-ribbon array thermally-induced anisotropic conductive film by adopting a two-axis parallel electrospinning technology. When heating is carried out (80 DEG C), the prepared thermally-induced anisotropic conductive film has strong thermally-induced anisotropic conductivity, that is, high thermally-induced anisotropic conductivity is realized through heating. The preparation method is simple and easy to implement, batch production can be achieved, and the novel anisotropic conductive film material has wide application prospects.

The utility model discloses a capacitor heat dissipation device. An insulating surface of a capacitor is connected with the top surface of an insulating heat dissipation block; the upper microstrip polar plates of the first microstrip polar plate and the second microstrip polar plate are respectively welded with two conductive polar plates of the capacitor, the connecting microstrip polar plates are respectively welded with two parts, which are not contacted with the insulating surface of the capacitor, of the top surface of the insulating heat dissipation block, and the lower microstrip polar plates are respectively welded with two side surfaces of the insulating heat dissipation block; the upper micro-strip polar plate, the connecting part micro-strip polar plate and the lower micro-strip polar plate are integrally formed; the left side bottom surface and the right side bottom surface of the insulating heat dissipation block are respectively welded on the first bonding pad and the second bonding pad; and the lower microstrip polar plates of the first microstrip polar plate and the second microstrip polar plate are respectively welded on the first bonding pad and the second bonding pad. By means of the device, part of heat can be conducted away through the heat bridge when the capacitor works, meanwhile, the heat bridge and the capacitor are fixed through the micro-strip polar plate, the micro-strip polar plate can further effectively enable the heat to flow away from the capacitor, and mechanical stress can also be eliminated.

The invention discloses a welding method for a chip ceramic dielectric capacitor microstrip product, and belongs to the technical field of electronic component welding processes. According to the technical scheme, the method comprises the following steps of: 1, coating a first layer of soldering paste on the top surfaces of two metal ends of the chip ceramic dielectric capacitor; 2, placing a silver sheet on the first layer of soldering paste, wherein the size of the silver sheet is matched with that of the metal end; step 3, coating a second layer of soldering paste on the surface of the silver sheet; fourthly, the welding face of the L-shaped silver strip or the silver-plated copper strip is attached to the silver piece coated with the second layer of soldering paste; (5) the attached assembly is fixed in a mold; and 6, reflow soldering is carried out. The method has the beneficial effects that the welding adhesive force and the appearance of the chip ceramic dielectric capacitor microstrip product are synchronously optimized, and the qualified rate of the product is improved.

The utility model discloses a ceramic dielectric capacitor microstrip fixing and welding device which comprises an upper plate and a bottom plate, a product groove is formed in the middle of the upper plate, the bottom of the product groove is arranged in a penetrating mode, microstrip grooves are formed in the two ends of the upper plate, and the two microstrip grooves are communicated with the product groove. A placing table is arranged in the middle of the bottom plate, and the placing table and the product groove are oppositely arranged; and the welding efficiency is greatly improved, upper, lower, left and right symmetry is achieved after welding is completed, and the appearance quality of a welded product is greatly improved.

The invention discloses a broadband magnetoelectric dipole antenna based on a bowknot-shaped polarization conversion metasurface, and belongs to the technical field of magnetoelectric dipole antennas. In order to solve the problems that an existing antenna is high in profile, radiation and scattering performance is difficult to consider, and broadband RCS reduction is difficult to achieve in a Ka band, the antenna adopts three metallization layers and two dielectric substrates which are arranged in a staggered mode, and a PCM checkerboard array composed of bowknot-shaped PCM units is integrated above a magnetoelectric dipole radiation unit; the magnetoelectric dipole radiation unit adopts a coplanar design, comprises four radiation patches serving as electric dipoles and two perforated annular microstrip feeder lines serving as magnetic dipoles, and feeds through a 50-ohm coaxial feed port arranged at the bottom of the magnetoelectric dipole radiation unit. The overall thickness of the antenna is only 0.762 mm, the low profile is achieved, and meanwhile the antenna has the comprehensive excellent performance of wide impedance matching (23.26%, 30.4-38.4 GHz), high gain (the peak value is 11.9 dBi) and ultra-wideband RCS reduction (gt, 10 dB, and the relative bandwidth is 63.83%, 28.9-56 GHz).

This invention belongs to the field of silicon carbide porous materials technology and provides a method for preparing silicon carbide micron-band sponges based on a thermally controlled strategy. The method uses a porous template containing carbon fibers as a framework and a silicon source as a reaction precursor. A SiC / SiOx composite shell is formed on the surface of the carbon fibers through a high-temperature reaction. Subsequently, controlled heat treatment is performed in an air atmosphere, causing the carbon fibers to be gradually oxidized and consumed. This induces the SiC / SiOx shell to crack along the fiber length and transform into a porous micron-band structure, thereby obtaining a three-dimensional porous network sponge material composed mainly of silicon carbide micron-bands. By controlling the high-temperature reaction temperature and the air heat treatment time window, the target micron-band structure can be stably obtained. The resulting material possesses high porosity, low density, low thermal conductivity, flexible compressibility, and electromagnetic wave absorption properties, making it suitable for integrated thermal insulation and electromagnetic protection applications in extreme environments.

The invention provides a quantum cascade laser epitaxial structure, and relates to the technical field of photoelectrons. The epitaxial structure comprises an InGaAs / InAlAs superlattice active region, and the InGaAs / InAlAs superlattice active region is composed of a plurality of periodic units. And each periodic unit sequentially comprises a transition region and a relaxation region from bottom to top. And the transition region sequentially comprises an Al < 0.93 > In < 0.07 > As quantum barrier layer, a Ga < 0.3 > In < 0.7 > As quantum well barrier layer, an Al < 0.63 > In < 0.37 > As quantum barrier layer, a Ga < 0.4 > In < 0.6 > As quantum well barrier layer, an Al < 0.56 > In < 0.44 > As quantum barrier layer and a Ga < 0.43 > In < 0.57 > As quantum well barrier layer from bottom to top. The relaxation region comprises a plurality of groups of relaxation region potential well structures, the four groups of relaxation region potential well structures located at the uppermost part sequentially comprise a Ga < 0.3 > In < 0.7 > As quantum well barrier layer, an Al < 0.7 > In < 0.3 > As quantum barrier layer, a Ga < 0.3 > In < 0.7 > As quantum well barrier layer, an Al < 0.65 > In < 0.35 > As quantum barrier layer, a Ga < 0.32 > In < 0.68 > As quantum well barrier layer, an Al < 0.65 > In < 0.35 > As quantum barrier layer, a Ga < 0.32 > In < 0.68 > As quantum well barrier layer and an Al < 0.6 > In < 0.4 > As quantum barrier layer from top to bottom, and a micro-strip extraction structure is formed. The epitaxial structure can effectively inhibit carrier leakage and improve tunneling extraction efficiency.