11 results about "AlSiC" patented technology

A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.

The present invention discloses an AlSiC composite material, a preparation method thereof, and an application thereof. The AlSiC composite material includes a substrate, the substrate includes a silicon carbide carrier, the silicon carbide carrier includes a silicon layer located on the surface, and aluminum in the gaps of the silicon carbide carrier, the silicon layer is provided with grooves; and carbon nanomaterials are arranged in the grooves. Since the activity of the carbon nanomaterials arranged in the grooves is greater than that of silicon atoms, the probability of binding between the carbon nanomaterials and aluminum atoms is greater than the probability of binding between carbon atoms and silicon atoms, thereby increasing the migration amount of aluminum atoms, especially on the silicon carbide surface embedded with atoms. At a certain temperature, the carbon nanomaterials embedded in the grooves disperse the density of aluminum to a certain extent and increase the aggregation of atoms near the center line of symmetry of the droplet, thereby further improving the wettability during the preparation of the composite material.

The invention discloses an AlSiC module preparation process and equipment based on gravity variable pressure infiltration, which adopts a staged gradient pressurization and gradient cooling synergistic process: firstly, realizing gravity infiltration of molten metal aluminum in a vacuum environment, and then completing layer-by-layer densification of an AlSiC composite material through multi-stage pressure regulation and control; and finally, the interface thermal stress is effectively controlled by combining a gradient cooling strategy of forced cooling and natural cooling. The corollary equipment is of a vertical cavity high-pressure kettle structure and comprises a first cavity and a second cavity which are distributed up and down, and accurate linkage of the two cavities is achieved through a switch structure. The equipment integrates an intelligent pressure regulation and control system and a composite temperature control system, and realizes multi-parameter programmed control of a pressure and temperature time sequence through a central control system. Through the synergistic effect of the dynamic pressure field and the temperature field, the infiltration efficiency and the interface bonding strength of the AlSiC composite material are remarkably improved.

The application relates to the technical field of metal matrix composites, and provides an AlSiC composite material and a preparation method thereof. The preparation method of the AlSiC composite material comprises the following steps: providing a silicon carbide substrate, the surface of the silicon carbide substrate is a silicon layer; removing part of silicon atoms of the silicon layer to form a plurality of grooves; filling carbon material into the grooves to form a pretreated silicon carbide substrate; dropping aluminum liquid droplets on the pretreated silicon carbide substrate and performing dynamic stretching treatment to form the AlSiC composite material. The preparation method of the AlSiC composite material provided by the application can weaken the distance edge length cooperation between Si atoms and C atoms in the silicon carbide substrate, enhance the binding force between aluminum atoms and Si atoms and C atoms in the diffusion process, thus accelerating the diffusion speed of the aluminum liquid, and further improving the wettability between the silicon carbide substrate and the aluminum liquid.

This invention relates to an amorphous thin film, its preparation method, and its application. The amorphous thin film is an AlSiC amorphous thin film, composed of Al, Si, and C. The preparation method includes the following steps: providing a target material, and depositing the amorphous thin film on a substrate using magnetron sputtering. The amorphous thin film can be used as a surface protection material. This invention utilizes the disordered arrangement of Al, Si, and C atoms to form the AlSiC amorphous thin film, resulting in a film that combines high strength, high hardness, and high toughness, achieving a strong and tough integrated structure. Consequently, when used as a surface protection material, the AlSiC amorphous thin film of this invention provides excellent protection and a longer service life. Furthermore, the magnetron sputtering method used in this invention for preparing the AlSiC amorphous thin film results in a stable deposition rate, and the deposited AlSiC amorphous thin film exhibits uniform composition, dense structure, few defects, good adhesion to the substrate, and strong bonding.

The invention discloses an AlSiC high-thermal-conductivity packaging material based on a photovoltaic silicon sludge in-situ synthesized porous SiC skeleton and a preparation method of the AlSiC high-thermal-conductivity packaging material, and belongs to the field of industrial solid waste high-valued utilization. The preparation method comprises the following steps: adding a metal / aluminum oxide bonding layer precursor, mixing with silicon mud powder, carbon source powder, a bonding agent and a pore forming agent, granulating, forming, and treating by a variable atmosphere gradient high-temperature sintering process to synthesize a 6H-SiC porous skeleton coated with metal or aluminum oxide nanoparticles in situ; the wettability of the aluminum melt on the surfaces of the silicon carbide particles is improved due to the existence of the metal or aluminum oxide nanoparticles, and the AlSiC composite material prepared after vacuum pressure aluminizing is higher in density, better in heat conductivity and good in structural controllability. By adjusting parameters such as the proportioning proportion, the forming process and the sintering process system, the silicon carbide crystal form and the porosity, pore size and distribution of the porous prefabricated blank are accurately controlled, and the quality requirement of the aluminum silicon carbide material on the silicon carbide porous prefabricated blank is met.

The invention relates to an electrical device, in particular an electrical storage device or a sensor housing, preferably a battery, in particular a microbattery or a capacitor, having a feedthrough, in particular a feedthrough through a housing part of the device housing, the housing being made of metal, in particular iron, an iron alloy, an iron-nickel alloy, an iron-nickel-cobalt alloy, KOVAR, steel, stainless steel, high-grade steel alloy, aluminum, an aluminum alloy, AlSIC, magnesium, a magnesium alloy or titanium or a titanium alloy, wherein the housing part has at least one opening as part of the feedthrough, wherein the opening extends around an axis, a first region of the housing part comprises the opening and a second region of the housing part is adjacent to the opening, and the opening accommodates an electrically conductive material, in particular a conductor, in a glass material or a glass ceramic material. The invention is distinguished in that the first region of the housing part has a width W substantially perpendicular to the axis of the opening, and the width W of the first region is always greater than the thickness D2, D E , and the electrically conductive material has a first coefficient of expansion α1, and the glass material or glass ceramic material has a second coefficient of expansion α2, and the housing part has a third coefficient of expansion α3, wherein the third coefficient of expansion α3 is always greater than the second coefficient of expansion α2.

This invention discloses an AlSiC high thermal conductivity encapsulation material based on in-situ synthesis of a porous SiC framework using photovoltaic silicon sludge and its preparation method, belonging to the field of high-value utilization of industrial solid waste. The method involves mixing a metal / alumina binder precursor with silicon sludge powder, carbon source powder, binder, and pore-forming agent, followed by granulation and molding. The resulting 6H-SiC porous framework, coated with metal or alumina nanoparticles, is then treated with a variable atmosphere gradient high-temperature sintering process. The presence of the metal or alumina nanoparticles improves the wettability of the aluminum melt on the surface of the silicon carbide particles. Vacuum pressure aluminizing further enhances the density and thermal conductivity of the prepared AlSiC composite material, while also exhibiting good structural controllability. By adjusting parameters such as the proportion of raw materials, molding process, and sintering process, this invention precisely controls the silicon carbide crystal structure and the porosity, pore size, and distribution of the porous preform, meeting the quality requirements of aluminum silicon carbide materials for porous silicon carbide preforms.

A weight optimized stiffener for use in a semiconductor device is disclosed herein. In one example, the stiffener is made of AlSiC for its weight and thermal properties. An O-ring provides sealing between a top surface of the stiffener and a component of the semiconductor device and adhesive provides sealing between a bottom surface of the stiffener and another component of the semiconductor device. The stiffener provides warpage control for a lidless package while enabling direct liquid cooling of a chip or substrate.

An electrical feedthrough (10) is provided, in particular for an electrical storage device. The electrical feed-through (10) comprises a body (12) having a through opening (14) and a terminal pin (20), which is located in the through opening (14) and is held in the through opening (14) in an electrically insulated manner by means of a fixing material (16). It is also provided that the terminal pin (20) comprises or consists of a layered composite material and has: a core (22) made of copper or a copper alloy or CuSiC as a first conductive material; and a cover material (24) provided at least on a first side of the electrical feedthrough (10), the cover material being made of aluminum or an aluminum alloy or AlSiC as a second conductive material and covering a first end face (23a) of the core (22), in which the terminal pin (20) and the fixing material (16) are formed and positioned such that a transition (26a) from the core (22) to the cover material (24) is located outside the fixing material (16).

The invention relates to the technical field of material processing, in particular to an Al / AlN / AlSiC heat dissipation module, an integrated preparation method of the Al / AlN / AlSiC heat dissipation module and an IGBT device. The integrated preparation method of the Al / AlN / AlSiC heat dissipation module comprises the steps that an Al layer, an AlN layer and an AlSiC layer are sequentially stacked to form a sandwich structure, Al-Si-Cu series brazing filler metal is added between every two adjacent layers, and a to-be-welded body is formed; and the body to be welded is subjected to vacuum brazing, and the Al / AlN / AlSiC heat dissipation module is obtained. According to the integrated manufacturing method of the Al / AlN / AlSiC heat dissipation module, compared with a traditional heat dissipation module, the production efficiency is higher.