7 results about "AlSiC" patented technology

A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.

The application relates to the technical field of metal matrix composites, and provides an AlSiC composite material and a preparation method thereof. The preparation method of the AlSiC composite material comprises the following steps: providing a silicon carbide substrate, the surface of the silicon carbide substrate is a silicon layer; removing part of silicon atoms of the silicon layer to form a plurality of grooves; filling carbon material into the grooves to form a pretreated silicon carbide substrate; dropping aluminum liquid droplets on the pretreated silicon carbide substrate and performing dynamic stretching treatment to form the AlSiC composite material. The preparation method of the AlSiC composite material provided by the application can weaken the distance edge length cooperation between Si atoms and C atoms in the silicon carbide substrate, enhance the binding force between aluminum atoms and Si atoms and C atoms in the diffusion process, thus accelerating the diffusion speed of the aluminum liquid, and further improving the wettability between the silicon carbide substrate and the aluminum liquid.

This invention relates to an amorphous thin film, its preparation method, and its application. The amorphous thin film is an AlSiC amorphous thin film, composed of Al, Si, and C. The preparation method includes the following steps: providing a target material, and depositing the amorphous thin film on a substrate using magnetron sputtering. The amorphous thin film can be used as a surface protection material. This invention utilizes the disordered arrangement of Al, Si, and C atoms to form the AlSiC amorphous thin film, resulting in a film that combines high strength, high hardness, and high toughness, achieving a strong and tough integrated structure. Consequently, when used as a surface protection material, the AlSiC amorphous thin film of this invention provides excellent protection and a longer service life. Furthermore, the magnetron sputtering method used in this invention for preparing the AlSiC amorphous thin film results in a stable deposition rate, and the deposited AlSiC amorphous thin film exhibits uniform composition, dense structure, few defects, good adhesion to the substrate, and strong bonding.

The invention discloses an AlSiC high-thermal-conductivity packaging material based on a photovoltaic silicon sludge in-situ synthesized porous SiC skeleton and a preparation method of the AlSiC high-thermal-conductivity packaging material, and belongs to the field of industrial solid waste high-valued utilization. The preparation method comprises the following steps: adding a metal / aluminum oxide bonding layer precursor, mixing with silicon mud powder, carbon source powder, a bonding agent and a pore forming agent, granulating, forming, and treating by a variable atmosphere gradient high-temperature sintering process to synthesize a 6H-SiC porous skeleton coated with metal or aluminum oxide nanoparticles in situ; the wettability of the aluminum melt on the surfaces of the silicon carbide particles is improved due to the existence of the metal or aluminum oxide nanoparticles, and the AlSiC composite material prepared after vacuum pressure aluminizing is higher in density, better in heat conductivity and good in structural controllability. By adjusting parameters such as the proportioning proportion, the forming process and the sintering process system, the silicon carbide crystal form and the porosity, pore size and distribution of the porous prefabricated blank are accurately controlled, and the quality requirement of the aluminum silicon carbide material on the silicon carbide porous prefabricated blank is met.

This invention discloses an AlSiC high thermal conductivity encapsulation material based on in-situ synthesis of a porous SiC framework using photovoltaic silicon sludge and its preparation method, belonging to the field of high-value utilization of industrial solid waste. The method involves mixing a metal / alumina binder precursor with silicon sludge powder, carbon source powder, binder, and pore-forming agent, followed by granulation and molding. The resulting 6H-SiC porous framework, coated with metal or alumina nanoparticles, is then treated with a variable atmosphere gradient high-temperature sintering process. The presence of the metal or alumina nanoparticles improves the wettability of the aluminum melt on the surface of the silicon carbide particles. Vacuum pressure aluminizing further enhances the density and thermal conductivity of the prepared AlSiC composite material, while also exhibiting good structural controllability. By adjusting parameters such as the proportion of raw materials, molding process, and sintering process, this invention precisely controls the silicon carbide crystal structure and the porosity, pore size, and distribution of the porous preform, meeting the quality requirements of aluminum silicon carbide materials for porous silicon carbide preforms.

A weight optimized stiffener for use in a semiconductor device is disclosed herein. In one example, the stiffener is made of AlSiC for its weight and thermal properties. An O-ring provides sealing between a top surface of the stiffener and a component of the semiconductor device and adhesive provides sealing between a bottom surface of the stiffener and another component of the semiconductor device. The stiffener provides warpage control for a lidless package while enabling direct liquid cooling of a chip or substrate.

An electrical feedthrough (10) is provided, in particular for an electrical storage device. The electrical feed-through (10) comprises a body (12) having a through opening (14) and a terminal pin (20), which is located in the through opening (14) and is held in the through opening (14) in an electrically insulated manner by means of a fixing material (16). It is also provided that the terminal pin (20) comprises or consists of a layered composite material and has: a core (22) made of copper or a copper alloy or CuSiC as a first conductive material; and a cover material (24) provided at least on a first side of the electrical feedthrough (10), the cover material being made of aluminum or an aluminum alloy or AlSiC as a second conductive material and covering a first end face (23a) of the core (22), in which the terminal pin (20) and the fixing material (16) are formed and positioned such that a transition (26a) from the core (22) to the cover material (24) is located outside the fixing material (16).