46 results about "AlSiC" patented technology

The invention discloses a method for preparing an aluminum silicon carbide composite material. Liquid metal aluminum is filled in a porous silicon carbide substrate which is prepared from spherical silicon carbide powder and spherical silicon powder which serve as raw materials and has a three-dimensional through hole structure through an injection molding process so as to form a bicontinuous phase, the density of the aluminum silicon carbide composite material and the product uniformity are improved, and a high-strength AlSiC substrate is obtained by changing molding pressure, adjusting ingredients of the spherical powder with different particle sizes, adding a pore-forming agent, and sintering at the temperature of between 1,400 and 2,400 DEG C. The porous substrate is fixed in a cavityof an injection machine, and the liquid metal aluminum enters the cavity from an injection port and is filled in through holes of the AlSiC substrate through a gas-liquid mixed injection process so as to form the aluminum silicon carbide composite material with a silicon carbide and metal aluminum bicontinuous phase structure. The aluminum silicon carbide composite material prepared by the process has the heat conductivity of 190 to 280 W / mK and the thermal expansion coefficient of 5.5 to 11.5*10(-6)K at room temperature of 200 DEG C, and has high rigidity, low density, high weldability and low machining amount.

The invention discloses an AlSiC composite material and a preparation method thereof. The AlSiC composite material comprises an SiC carrier having a porous structure, wherein Al is filled in the pores of the SiC carrier, and the surface of the SiC carrier is covered with an Al layer having a thickness of 30-150mum; and the Al layer and the Al matrix filled in the pores of the SiC carrier are a continuous distribution phase. The invention also provides an Ni-plated AlSiC composite material. The AlSiC composite material provided by the invention has a good surface chemical-coating homogeneity.

A feed-through, in particular a feed-through which passes through part of a housing, in particular a battery housing, for example made of metal, in particular light metal, for example aluminum, an aluminum alloy, AlSiC, magnesium, an magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor, in particular an essentially pin-shaped conductor, embedded in a glass or glass ceramic material, is guided. The base body is, for example, an essentially annular-shaped base body.

A feed-through component for a conductor feed-through which passes through a part of a housing, for example a battery housing, is embedded in a glass or glass ceramic material and has at least one conductor, for example an essentially pin-shaped conductor, and a head part. The surface, in particular the cross-sectional surface, of the head part is greater than the surface, in particular the cross-sectional surface, of the conductor, for example of the essentially pin-shaped conductor. The head part is embodied such that is can be joined to an electrode-connecting component, for example an electrode-connecting part, which may be made of copper, a copper alloy CuSiC, an aluminum alloy AlSiC or aluminum, with a mechanically stable and non-detachable connection.

The invention discloses a Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device which is characterized in that the device comprises a substrate and serial rare earth electronic slurry, the serial rare earth electronic slurry is prepared on the substrate in the mode of a thick film circuit, the serial rare earth electronic slurry comprises coating slurry, rare earth resistance slurry, rare earth electrode slurry and rare earth medium slurry. Substrate vacuum impregnation ingredients comprise, by weight ratio, 2-7% of magnesium and 1.5-2.5% of rare earth metal neodymium and scandium together except for aluminum. The Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device is good in compatibility, firm in combination, large in power density, high in thermal shock resistance, high in heat dissipation efficiency, environmentally friendly, capable of saving energy and safe and reliable, and good match of the device and LED chips is achieved.

A feed-through, in particular a feed-through which passes through part of a housing, in particular a battery housing, for example made of metal, in particular light metal, for example aluminum, an aluminum alloy, AlSiC, magnesium, an magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor, in particular an essentially pin-shaped conductor, embedded in a glass or glass ceramic material, is guided. The base body is, for example, an essentially annular-shaped base body and is hermetically sealed with the housing part such that the helium leakage rate is smaller than 1*10−8 mbar l / sec.

A feedthrough, for example through a part of a housing, such as a battery housing, is, for example, made of a metal, such as a light alloy, for example aluminum, an aluminum alloy, AlSiC, magnesium, a magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor having a cross-section is guided in a glass or glass ceramic material. The conductor has at least two sections, a first section having a first, substantially round, for example a circular, cross section having a diameter in the region of the feedthrough through the glass or glass ceramic material, and a second section having a second, substantially non-round, for example a substantially rectangular cross-section, and the conductor is formed in one piece.

Metal-matrix composites with combinations of physical and mechanical properties desirable for specific applications can be obtained by varying and controlling selected parameters in the material formation processes, particularly by increasing the microstructural homogeneity of the composite, while maintaining a constant mixture ratio or volume fraction. In one embodiment of the invention, a CuSiC composite having increased thermal conductivity is obtained by closely controlling the size of the SiC particles. In another embodiment of the invention, AlSiC composites which exhibit increased ultimate tensile and yield strengths are made by closely controlling the size of SiC and Al particles.

Metal-matrix composites with combinations of physical and mechanical properties desirable for specific applications can be obtained by varying and controlling selected parameters in the material formation processes, particularly by increasing the microstructural homogeneity of the composite, while maintaining a constant mixture ratio or volume fraction. In one embodiment of the invention, a CuSiC composite having increased thermal conductivity is obtained by closely controlling the size of the SiC particles. In another embodiment of the invention, AlSiC composites which exhibit increased ultimate tensile and yield strengths are made by closely controlling the size of SiC and Al particles.

The invention relates to a 1200V / 50A IGBT power module based on a rapid sintering nano-silver soldering paste pressure-free interconnection technology; a bottom plate adopts a nickel-plated thick copper block or AlSiC; two ceramic copper-clad DBC substrates with the same circuit style are arranged on the bottom plate in a reversed mode; the substrates are connected through a connecting bridge; twogroups of IGBT chips and follow-up diode chip parallel branch groups are in interconnection with the substrates; a double-layer printing variable-temperature preheating solder paste method is adopted, and the chips and the DBC substrates are connected in an instant mode through continuous pulse current auxiliary pressure-free sintering nano-silver solder paste; the sintering connection time is not more than 15 seconds; and then steps of lead bonding, vacuum backflow secondary welding, tube shell mounting, and sealing agent filling are carried out to prepare the IGBT module. Compared with commercial IGBT modules of the same grade, the IGBT module of the invention has high electrical performance, lower thermal resistance and better heat dissipation characteristics, and meanwhile has excellent thermal cycling fatigue aging resistance.

The invention discloses an LED packaged with an AlSiC composite substrate. The LED comprises the AlSiC composite cooling substrate, an LED light source module, gold threads and an alumina ceramic frame, wherein the surface of the AlSiC composite cooling substrate is plated with a copper film and a silver film sequentially; the LED light source module is packaged on the AlSiC composite cooling substrate; the alumina ceramic frame is arranged on the outer side of the LED light source module and adheres to the LED light source module; two copper-film electrodes are plated on the alumina ceramic frame and connected with a positive pole and a negative pole of the LED light source module through the gold threads respectively. According to the LED, thermal expansion coefficients of the AlSiC composite substrate and an LED chip material are matched, so that an LED chip which is packaged on the substrate is not prone to falling, and the service life of the LED is prolonged.

The invention discloses a light-emitting diode (LED) packaged on basis of an AlSiC composite substrate. The LED comprises an AlSiC composite radiating substrate coated with an AlN insulating layer, two copper membrane electrodes, an LED chip and golden wires. The LED chip is packaged on the AlSiC composite radiating substrate coated with the AlN insulating layer, the two copper membrane electrodes are plated on the AlN insulating layer and connected with the positive electrode and the negative electrode of the LED chip through the golden wires. The LED packaged on basis of the AlSiC composite substrate is simple in structure, good in radiating performance and long in service life.

The invention discloses a copper-covered ALSiC composite radiating substrate which comprises an ALSiC substrate body and a copper layer attached to the ALSiC substrate body. A copper-aluminum spinel interface is formed between the copper layer and the ALSiC substrate body. The ALSiC composite radiation substrate is simple in structure, good in radiating performance, capable of solving the problem that the radiating substrate body is not matched with thermal expansion of a chip material, capable of preventing an LED chip packaged on the substrate body from being easily disengaged, capable of prolonging the service life of an LED and applicable to manufacturing of low-cost large-power LEDs.

The invention belongs to a preparation technology of an electronic slurry and specifically relates to a medium-temperature cured conductive slurry specially used for an AlSiC LED support. The conductive slurry is uniform in distribution, great in stability, lower in sintering temperature and great in conductivity. The medium-temperature cured conductive slurry specially used for the AlSiC LED support includes a conductive function phase and a carrier phase. The conductive function phase is silver particles, and the carries phase is made of raw materials in the following mass percentage: 2-10% of a dispersant, 5-10% of a flatting agent, 2-5% of a thixotropic agent and 2-10% of a thickening agent, the remaining being a solvent. The silver particles occupy 30-80% of a total mass percentage and are prepared through a specific preparation method.

The present invention relates to a reflective plate which effectively disperses the heat of the lamp to the outside of the liquid display panel to improve the quality, a method for manufacturing the same and a backlight unit with the same. The reflective plate comprises a graphite, aluminum, copper, CNT in a film shape, in a plate shape or in a power shape, a thermal conduction material for ALSiC, and the reflecting materials, such as Ag, Al2O3, TiO2, Al, PET and the optical fiber.

A feedthrough, for example through a part of a housing, such as a battery housing, is, for example, made of a metal, such as a light alloy, for example aluminum, an aluminum alloy, AlSiC, magnesium, a magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor having a cross-section is guided in a glass or glass ceramic material. The conductor has at least two sections, a first section having a first, substantially round, for example a circular, cross section having a diameter in the region of the feedthrough through the glass or glass ceramic material, and a second section having a second, substantially non-round, for example a substantially rectangular cross-section, and the conductor is formed in one piece.

The invention relates to an electrical device, in particular an electrical storage device or sensor housing, preferably a battery, in particular a micro-battery or capacitor, having a feedthrough through a housing part which has the material thickness T of the housing of the device and is made of a metal, in particular iron, iron alloys, iron-nickel alloys, iron-nickel-cobalt alloys, KOVAR, steel, stainless steel, aluminum, aluminum alloys, AlSiC, magnesium, magnesium alloys, titanium or titanium alloys, wherein the housing part has at least one opening, the opening receiving a contact element, in particular a conductor, made of a conductive material in a glass or glass ceramic material. The invention is characterized in that the housing part has a flange in the region of the opening and thus forms an inner wall of the through-opening of the height H, EL which is greater than the material thickness T, the glass length EL of the glass or glass ceramic material preferably corresponding to the height H.

The invention relates to a power electronic device IGBT (Insulated Gate Bipolar Translator) module with a heat dissipation structure and a preparation method, and belongs to the technical field of power electronic manufacturing and sealing testing. The power electronic device IGBT module with the heat dissipation structure comprises a bonding wire, an IGBT chip, an FRD chip, a solder layer, a DBC substrate, a heat conduction grease layer, the heat dissipation structure and a micropump. The heat dissipation structure comprises a micro-channel copper substrate, wherein AlSiC dielectric layers are machined on the two faces of the micro-channel copper substrate. The AlSiC dielectric layers are processed to the two sides of the micro-channel copper substrate through a laser shock peening manufacturing process, so that the heat dissipation structure has a low thermal expansion coefficient, a high-strength heat conduction coefficient and low cost, heat generated by a module can be efficiently dissipated, and rapid cooling is achieved. The problems that an existing IGBT module heat dissipation system is large in weight, high in manufacturing cost and poor in heat dissipation performance are solved, the problem that heat dissipation of a radiator is unbalanced can be effectively solved, and therefore the reliability of a device is improved, and the service life of the device is prolonged.

The present invention is a system for cooling high power, heat generating devices. The system includes a metal matrix composite (AlSiC) having a coefficient of thermal expansion substantially equal to that of the heat generating device. The metal matrix composite (MMC) includes interior cooling channels and at least one Pyrolytic Graphite insert laterally positioned against the cooling channels. The heat generating device is placed on the metal matrix composite top surface in a substantially parallel relationship with the Pyrolytic Graphite insert surface area for maximum heat transfer efficiency.

The invention discloses an anti-corrosion graphite fiber AlSiC composite for electronic packaging. The composite is prepared from raw materials in parts by weight as follows: 11-13 parts of graphite fibers, 75-78 parts of SiC, 95-100 parts of a 6061 aluminium alloy, 0.4-0.6 parts of aluminum oxide, 4-4.3 parts of phosphoric acid, 13-14 parts of a pore-forming agent, 2-2.5 parts of PVP, a proper amount of dichloromethane, a proper amount of DMF, 1.3-1.5 parts of nano lanthanum borate, 1.5-1.8 parts of flaky carbon powder, 1.1-1.4 parts of nano aluminum hydroxide, 1.6-1.8 parts of germanium diboride and 43-45 parts of ethyl alcohol. The graphite fibers are added, a linear heat dissipation path is formed, and the heat dissipation performance is better than that of separate point contact of SiC; the germanium diboride is used, and the molten metal etching resistance, the active gas corrosion resistance, abrasion resistance and the oxidation resistance of the composite are improved; and the flaky carbon powder and the nano aluminum hydroxide are used cooperatively, and the heat dissipation performance and the strength of the composite are improved.

The invention discloses a copper-covered ALSiC composite radiating substrate which comprises an ALSiC substrate body and a copper layer attached to the ALSiC substrate body. A copper-aluminum spinel interface is formed between the copper layer and the ALSiC substrate body. The ALSiC composite radiation substrate is simple in structure, good in radiating performance, capable of solving the problem that the radiating substrate body is not matched with thermal expansion of a chip material, capable of preventing an LED chip packaged on the substrate body from being easily disengaged, capable of prolonging the service life of an LED and applicable to manufacturing of low-cost large-power LEDs.

The invention relates to the technical field of composite materials, and in particular relates to a preparation method of an AlSiC / AlSi two-phase material, and the AlSiC / AlSi two-phase material prepared by the preparation method. According to the method provided by the invention, firstly a porous silicon carbide ceramic substrate M6 is prepared by using powder formed by silicon carbide powder with different particle sizes, aluminum oxide, kaolin and Suzhou soil, a ceramic substrate M9 with combined silicon and silicon carbide surface layer diffusion is prepared from silicon wax slurry M7 containing silicon powder with different particle sizes on the basis of the ceramic substrate M6, and finally aluminum is infiltrated into the ceramic substrate M9 to form the composite material having two phases of AlSiC and AlSi; and the composite material combines the advantages of the AlSiC and the AlSi in one, and has the advantages of high thermal conductivity, an adjustable expansion coefficient, a low density and good strength.

The invention relates to a weight-optimized stiffener and seal structure for a direct liquid cooling module. A weight-optimized stiffener for a semiconductor device is disclosed. In one example, the reinforcement is made of AlSiC due to the weight and thermal characteristics of AlSiC. The O-shaped ring provides a seal between the top surface of the stiffener and a component of the semiconductor device, and the adhesive provides a seal between the bottom surface of the stiffener and another component of the semiconductor device. The stiffener provides warpage control for the lidless package while achieving direct liquid cooling of the chip or substrate.

The invention discloses a substrate for an IGBT module and a method for encapsulating an IGBT module. The substrate comprises an AlSiC layer and an aluminium alloy layer, wherein the aluminium alloy layer is located on the surface of the bottom of the AlSiC layer to form a layer to be machined. The method comprises the following steps: (1) producing the substrate; accumulating SiC powder to form a uniform prefabricated part with a porous structure at first, and then infiltrating liquid-state aluminium alloy into the prefabricated part to form the AlSiC layer; continuing to inject the liquid-state aluminium alloy, and forming the aluminium alloy layer on the surface of the substrate; (2) sinking inwards the bottom of the substrate after using the substrate for finishing IGBT encapsulation, at this moment, levelly machining the bottom of the substrate to eliminate the radian sunk inwards. The substrate and the method disclosed by the invention have the advantages of being simple and convenient to machine, low in machining cost, capable of improving reliability, and the like.

A weight optimized stiffener for use in a semiconductor device is disclosed herein. In one example, the stiffener is made of AlSiC for its weight and thermal properties. An O-ring provides sealing between a top surface of the stiffener and a component of the semiconductor device and adhesive provides sealing between a bottom surface of the stiffener and another component of the semiconductor device. The stiffener provides warpage control for a lidless package while enabling direct liquid cooling of a chip or substrate.

The invention discloses a preparation method of an AlSiC flaky powder. The method comprises the following steps: 1) mixing weighed raw materials so as to obtain a mixture, wherein the raw materials comprise the following components by weight percent: 45-60% of Al2O3 raw material, 10%-20% of SiO2 raw material, 25-40% of carbon raw material and 14% of SiC raw material; and 2) heating the mixture for 2-5 hours at the temperature of 1900-2200 DEG C at the mixed atmosphere of CO and Ar, cooling, and then removing the impurity layer on the surface of the product so as to obtain the AlSiC flaky powder, wherein the total pressure of the mixed atmosphere is 1 atmosphere pressure. The method in invention is simple and practicable and is suitable for scale production, and the yield and purity of theobtained product are high; and the length and width sizes of the obtained AlSiC flaky powder are 50-200 mu m, and the thickness of the AlSiC flaky powder is 4-5 mu m. The flaky structure of AlSiC is beneficial to enhancement of a ceramic product structure and improvement of product strength, thermal shock resistance and chemical corrosion resistance.

The invention discloses an easy-to-process graphite fiber AlSiC composite for electronic packaging. The composite is prepared from raw materials in parts by weight as follows: 11-13 parts of graphite fibers, 75-78 parts of SiC, 95-100 parts of a 6061 aluminium alloy, 0.4-0.6 parts of aluminum oxide, 4-4.3 parts of phosphoric acid, 13-14 parts of a pore-forming agent, 2-2.5 parts of PVP, a proper amount of dichloromethane, a proper amount of DMF, 1.3-1.5 parts of nano lanthanum borate, 1.3-1.5 parts of BeC, 1.2-1.4 parts of silver-coated TiO2 microspheres, 0.7-0.9 parts of graphite fluoride and 43-45 parts of ethyl alcohol. The graphite fibers are added, a linear heat dissipation path is formed, the heat dissipation performance is better than that of separate point contact of SiC, and the thermal expansion coefficient is further reduced; the BeC, the silver-coated TiO2 microspheres and the graphite fluoride are used, the machinability and the formability of the composite are improved, the size is accurate, and the heat dissipation performance is good.

The invention discloses an LED packaged with an AlSiC composite substrate. The LED comprises the AlSiC composite cooling substrate, an LED light source module, gold threads and an alumina ceramic frame, wherein the surface of the AlSiC composite cooling substrate is plated with a copper film and a silver film sequentially; the LED light source module is packaged on the AlSiC composite cooling substrate; the alumina ceramic frame is arranged on the outer side of the LED light source module and adheres to the LED light source module; two copper-film electrodes are plated on the alumina ceramic frame and connected with a positive pole and a negative pole of the LED light source module through the gold threads respectively. According to the LED, thermal expansion coefficients of the AlSiC composite substrate and an LED chip material are matched, so that an LED chip which is packaged on the substrate is not prone to falling, and the service life of the LED is prolonged.

An IGBT (insulated gate bipolar transistor) modular structure comprises an ALSIC (aluminum silicon carbide) substrate, a copper coating, an ALN (aluminum carbide) insulating ceramic layer, a metal welding pad and a chip. The copper coating is positioned on the ALSIC substrate, the ALN insulating ceramic layer is positioned on the copper coating, the metal welding pad is positioned on the ALN insulating ceramic layer, the chip is positioned on the metal welding pad, and a cavity is formed between the ALN insulating ceramic layer and the ALSIC substrate and is positioned below the chip. Through the cavity positioned below the chip, the electric field intensity at a position with a maximum electric-field value is lowered, apparent charge of partial discharging is reduced, partial discharging is avoided, and discharge performance of modules is improved.

A feed-through, in particular a feed-through which passes through part of a housing, in particular a battery housing, for example made of metal, in particular light metal, for example aluminum, an aluminum alloy, AlSiC, magnesium, an magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor, in particular an essentially pin-shaped conductor, embedded in a glass or glass ceramic material, is guided. The base body is, for example, an essentially annular-shaped base body and is hermetically sealed with the housing part such that the helium leakage rate is smaller than 1*10−8 mbar l / sec.