Substrate for IGBT module and encapsulation method for IGBT module

Abstract

The invention discloses a substrate for an IGBT module and a method for encapsulating an IGBT module. The substrate comprises an AlSiC layer and an aluminium alloy layer, wherein the aluminium alloy layer is located on the surface of the bottom of the AlSiC layer to form a layer to be machined. The method comprises the following steps: (1) producing the substrate; accumulating SiC powder to form a uniform prefabricated part with a porous structure at first, and then infiltrating liquid-state aluminium alloy into the prefabricated part to form the AlSiC layer; continuing to inject the liquid-state aluminium alloy, and forming the aluminium alloy layer on the surface of the substrate; (2) sinking inwards the bottom of the substrate after using the substrate for finishing IGBT encapsulation, at this moment, levelly machining the bottom of the substrate to eliminate the radian sunk inwards. The substrate and the method disclosed by the invention have the advantages of being simple and convenient to machine, low in machining cost, capable of improving reliability, and the like.

Description

technical field [0001] The invention mainly relates to the field of IGBT manufacture, in particular to a substrate suitable for a high-power IGBT module and a packaging method for the IGBT module. Background technique [0002] IGBT is a high-power semiconductor device, and its Chinese name is: Insulated Gate Bipolar Transistor. It is a device that can be turned on and off by an external signal. Therefore, in the fields of high-power electrical, electric power, and electronics, IGBT can act as a switch in the circuit, and through a specific circuit, it can achieve the effect of changing the direction of the current. When the IGBT is passing a large current, it will generate heat due to its own on-state resistance; when the IGBT is turned on and off, because of the instantaneous overlap of high voltage and large current, heat will also be generated. If the heat cannot be effectively dissipated, the temperature of the IGBT will gradually rise, resulting in failure beyond the ...

AI Technical Summary

Problems solved by technology

[0008] (1) Due to the inevitable deformation of the traditional IGBT substrate 1 during the process, it will cause potential defects for installing the IGBT on the heat sink

[0009] (2) Because the traditional IGBT substrate 1 is completely composed of aluminum silicon carbide, its hardness is relatively high, and it is difficult and costly to perform batch mechanical cutting on it

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