A kind of substrate for igbt module and packaging method of igbt module

Abstract

The invention discloses a substrate for an IGBT module and a method for encapsulating the IGBT module. The substrate includes an AlSiC layer and an aluminum alloy layer, and the surface of the aluminum alloy layer at the bottom of the AlSiC layer forms a layer to be machined. The steps of the method are as follows: (1) making the substrate; first, the SiC powder is deposited to form a uniform porous structure prefabricated part, and then the liquid aluminum alloy is impregnated into the prefabricated part to form an AlSiC layer; and then the liquid aluminum alloy is continuously injected, A layer of aluminum alloy is formed on the surface of the substrate; (2) After the IGBT package is completed using the above substrate, the bottom of the substrate will be sunken inward; at this time, the bottom of the substrate is processed flat by machining to eliminate the concave curvature. The invention has the advantages of simple processing, low processing cost, improved reliability and the like.

Description

technical field [0001] The invention mainly relates to the field of IGBT manufacture, in particular to a substrate suitable for a high-power IGBT module and a packaging method for the IGBT module. Background technique [0002] IGBT is a high-power semiconductor device, and its Chinese name is: Insulated Gate Bipolar Transistor. It is a device that can be turned on and off by an external signal. Therefore, in the fields of high-power electrical, electric power, and electronics, IGBT can act as a switch in the circuit, and through a specific circuit, it can achieve the effect of changing the direction of the current. When the IGBT is passing a large current, it will generate heat due to its own on-state resistance; when the IGBT is turned on and off, because of the instantaneous overlap of high voltage and large current, heat will also be generated. If the heat cannot be effectively dissipated, the temperature of the IGBT will gradually rise, resulting in failure beyond the ...

AI Technical Summary

Problems solved by technology

[0008] (1) Due to the inevitable deformation of the traditional IGBT substrate 1 during the process, it will cause potential defects for installing the IGBT on the heat sink

[0009] (2) Because the traditional IGBT substrate 1 is completely composed of aluminum silicon carbide, its hardness is relatively high, and it is difficult and costly to perform batch mechanical cutting on it

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