A kind of substrate for igbt module and packaging method of igbt module

A module packaging and substrate technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve problems such as difficulty, hardness, and installation IGBT defects, and achieve the effect of reducing roughness
CN104952809BActive Publication Date: 2017-12-12ZHUZHOU CRRC TIMES SEMICON CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHUZHOU CRRC TIMES SEMICON CO LTD
Publication Date
2017-12-12

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a substrate for an IGBT module and a method for encapsulating the IGBT module. The substrate includes an AlSiC layer and an aluminum alloy layer, and the surface of the aluminum alloy layer at the bottom of the AlSiC layer forms a layer to be machined. The steps of the method are as follows: (1) making the substrate; first, the SiC powder is deposited to form a uniform porous structure prefabricated part, and then the liquid aluminum alloy is impregnated into the prefabricated part to form an AlSiC layer; and then the liquid aluminum alloy is continuously injected, A layer of aluminum alloy is formed on the surface of the substrate; (2) After the IGBT package is completed using the above substrate, the bottom of the substrate will be sunken inward; at this time, the bottom of the substrate is processed flat by machining to eliminate the concave curvature. The invention has the advantages of simple processing, low processing cost, improved reliability and the like.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention mainly relates to the field of IGBT manufacture, in particular to a substrate suitable for a high-power IGBT module and a packaging method for the IGBT module. Background technique

[0002] IGBT is a high-power semiconductor device, and its Chinese name is: Insulated Gate Bipolar Transistor. It is a device that can be turned on and off by an external signal. Therefore, in the fields of high-power electrical, electric power, and electronics, IGBT can act as a switch in the circuit, and through a specific circuit, it can achieve the effect of changing the direction of the current. When the IGBT is passing a large current, it will generate heat due to its own on-state resistance; when the IGBT is turned on and off, because of the instantaneous overlap of high voltage and large current, heat will also be generated. If the heat cannot be effectively dissipated, the temperature of the IGBT will gradually rise, resulting in failure beyond the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More