A kind of substrate for igbt module and packaging method of igbt module
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHUZHOU CRRC TIMES SEMICON CO LTD
- Publication Date
- 2017-12-12
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Abstract
Description
technical field
[0001] The invention mainly relates to the field of IGBT manufacture, in particular to a substrate suitable for a high-power IGBT module and a packaging method for the IGBT module. Background technique
[0002] IGBT is a high-power semiconductor device, and its Chinese name is: Insulated Gate Bipolar Transistor. It is a device that can be turned on and off by an external signal. Therefore, in the fields of high-power electrical, electric power, and electronics, IGBT can act as a switch in the circuit, and through a specific circuit, it can achieve the effect of changing the direction of the current. When the IGBT is passing a large current, it will generate heat due to its own on-state resistance; when the IGBT is turned on and off, because of the instantaneous overlap of high voltage and large current, heat will also be generated. If the heat cannot be effectively dissipated, the temperature of the IGBT will gradually rise, resulting in failure beyond the ...