Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGBT (insulated gate bipolar transistor) modular structure

A module structure and cavity technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of poor controllability, complicated process, and no reduction of the electric field intensity at the maximum value of the electric field, so as to improve the discharge performance and reduce the Electric field strength, the effect of avoiding partial discharge

Inactive Publication Date: 2014-03-12
XIAN YONGDIAN ELECTRIC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process is more complex and less controllable;
[0010] (3) This method can reduce the occurrence of partial discharge, but it does not reduce the electric field intensity at the maximum value of the electric field, and the fundamental problem has not been solved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT (insulated gate bipolar transistor) modular structure
  • IGBT (insulated gate bipolar transistor) modular structure
  • IGBT (insulated gate bipolar transistor) modular structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] As mentioned in the background art, in the existing IGBT modules, in order to improve the partial discharge performance of the IGBT modules, new insulating materials are often used to improve their ability to withstand electric fields. However, this method not only leads to an increase in the complexity of the manufacturing process, but also fails to fundamentally improve the partial discharge performance of the module because it fails to reduce the electric field intensity at the maximum value of the electric field of the module.

[0029] Therefore, the present invention proposes a new IGBT module structure from the perspective of changing the structure and optimizing the process. By setting a cavity below the chip, the electric field intensity at the maximum value of the electric field is reduced, and the local discharge of the TV is reduced. Avoid partial discharge and improve the discharge performance of the module.

[0030] The technical scheme of this case will be intr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

An IGBT (insulated gate bipolar transistor) modular structure comprises an ALSIC (aluminum silicon carbide) substrate, a copper coating, an ALN (aluminum carbide) insulating ceramic layer, a metal welding pad and a chip. The copper coating is positioned on the ALSIC substrate, the ALN insulating ceramic layer is positioned on the copper coating, the metal welding pad is positioned on the ALN insulating ceramic layer, the chip is positioned on the metal welding pad, and a cavity is formed between the ALN insulating ceramic layer and the ALSIC substrate and is positioned below the chip. Through the cavity positioned below the chip, the electric field intensity at a position with a maximum electric-field value is lowered, apparent charge of partial discharging is reduced, partial discharging is avoided, and discharge performance of modules is improved.

Description

Technical field [0001] The invention belongs to the design field of electronic circuits, in particular to an IGBT module structure capable of improving partial discharge rate. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a device composed of MOSFET and bipolar transistor. Its input is MOSFET and output is PNP transistor. It combines the advantages of these two devices, and it has MOSFET device drive. The advantages of low power and fast switching speed, as well as the advantages of reduced saturation voltage of bipolar devices and large capacity, its frequency characteristics are between MOSFET and power transistor, and can work normally in the frequency range of tens of kHz. Electronic technology has been used more and more widely, occupying a dominant position in high-frequency and medium-power applications. [0003] At present, the capacity of IGBT module has reached 2000A / 6500V, which meets the application requirements of power electronics and powe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/13H01L23/60
Inventor 曹琳
Owner XIAN YONGDIAN ELECTRIC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com