1200V/50A IGBT power module based on rapid sintering nano-silver soldering paste pressure-free interconnection technology

Abstract

The invention relates to a 1200V / 50A IGBT power module based on a rapid sintering nano-silver soldering paste pressure-free interconnection technology; a bottom plate adopts a nickel-plated thick copper block or AlSiC; two ceramic copper-clad DBC substrates with the same circuit style are arranged on the bottom plate in a reversed mode; the substrates are connected through a connecting bridge; twogroups of IGBT chips and follow-up diode chip parallel branch groups are in interconnection with the substrates; a double-layer printing variable-temperature preheating solder paste method is adopted, and the chips and the DBC substrates are connected in an instant mode through continuous pulse current auxiliary pressure-free sintering nano-silver solder paste; the sintering connection time is not more than 15 seconds; and then steps of lead bonding, vacuum backflow secondary welding, tube shell mounting, and sealing agent filling are carried out to prepare the IGBT module. Compared with commercial IGBT modules of the same grade, the IGBT module of the invention has high electrical performance, lower thermal resistance and better heat dissipation characteristics, and meanwhile has excellent thermal cycling fatigue aging resistance.

Description

technical field [0001] The invention relates to a 1200V / 50A IGBT power module based on rapid sintering nano-silver solder paste non-pressure interconnection technology, belonging to the technical field of packaging of power electronic devices. Background technique [0002] IGBT modules are widely used in traditional industries such as communications, computers, consumer electronics, automotive electronics, ship drives, aerospace, processing equipment, national defense and military industries, as well as strategic emerging industries such as rail transit, new energy, smart grids, and new energy vehicles. IGBT has become the main power device in the power electronics industry due to its characteristics of low driving power, high input impedance, fast switching speed, small on-state voltage drop, high current carrying density, and high blocking voltage. The use of IGBT for power conversion can improve the efficiency and quality of power consumption, and has the characteristics ...

AI Technical Summary

Problems solved by technology

[0005] At present, the hot-pressing sintering process is generally used for nano-silver solder paste, but there are some disadvantages in the hot-pressing sintering process: the required sintering time is long (>1 hour), the process conditions are complicated, and the efficiency is low.

The pressure positioning fixture device is also not conducive to the automatic production of packaged power semiconductor devices. Improper selection of applied pressure may cause permanent damage to the chip

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