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Power electronic device IGBT (Insulated Gate Bipolar Translator) module with heat dissipation structure and preparation method

A technology of power electronic devices and heat dissipation structures, which is applied in the direction of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of high production cost, heavy heat dissipation system weight, weak heat dissipation performance, etc., achieve low cost, improve Effect of heat dissipation performance and low thermal expansion coefficient

Active Publication Date: 2022-04-12
合肥阿基米德电子科技有限公司
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Problems solved by technology

[0004] The purpose of the present invention is to provide a power electronic device IGBT module with a heat dissipation structure and a preparation method to solve the problems of heavy weight, high manufacturing cost and weak heat dissipation performance of the IGBT module heat dissipation system in the prior art

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  • Power electronic device IGBT (Insulated Gate Bipolar Translator) module with heat dissipation structure and preparation method
  • Power electronic device IGBT (Insulated Gate Bipolar Translator) module with heat dissipation structure and preparation method
  • Power electronic device IGBT (Insulated Gate Bipolar Translator) module with heat dissipation structure and preparation method

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] The object of the present invention is to provide a power electronic device IGBT module with a heat dissipation structure and a preparation method to solve the problems of heavy weight, high manufacturing cost and weak heat dissipation performance of the IGBT module heat dissipation system in the prior art.

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be furt...

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Abstract

The invention relates to a power electronic device IGBT (Insulated Gate Bipolar Translator) module with a heat dissipation structure and a preparation method, and belongs to the technical field of power electronic manufacturing and sealing testing. The power electronic device IGBT module with the heat dissipation structure comprises a bonding wire, an IGBT chip, an FRD chip, a solder layer, a DBC substrate, a heat conduction grease layer, the heat dissipation structure and a micropump. The heat dissipation structure comprises a micro-channel copper substrate, wherein AlSiC dielectric layers are machined on the two faces of the micro-channel copper substrate. The AlSiC dielectric layers are processed to the two sides of the micro-channel copper substrate through a laser shock peening manufacturing process, so that the heat dissipation structure has a low thermal expansion coefficient, a high-strength heat conduction coefficient and low cost, heat generated by a module can be efficiently dissipated, and rapid cooling is achieved. The problems that an existing IGBT module heat dissipation system is large in weight, high in manufacturing cost and poor in heat dissipation performance are solved, the problem that heat dissipation of a radiator is unbalanced can be effectively solved, and therefore the reliability of a device is improved, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of power electronics manufacturing and packaging and testing, in particular to an IGBT module of a power electronic device with a heat dissipation structure and a preparation method. Background technique [0002] With the advent of the post-Moore era, the packaging technology of electronic components has developed from traditional two-dimensional packaging to 2.5-dimensional (2.5D) or higher-level three-dimensional (3D) packaging. Although 3D packaging technology improves the operating speed of electronic components and realizes the miniaturization and multi-functionalization of electronic equipment, it also leads to the further concentration of heat generated by the device. The use of conventional heat conduction technology has been unable to achieve effective heat conduction. In modern electronic components, a considerable part of the power is converted into heat, and the heat generated by dissipation seri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/473H01L23/373H01L23/14H01L21/60
CPCH01L2224/48137H01L2224/48091H01L2224/73265H01L2924/00014
Inventor 孙亚萌马坤宋一凡周洋
Owner 合肥阿基米德电子科技有限公司
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