Power electronic device IGBT (Insulated Gate Bipolar Translator) module with heat dissipation structure and preparation method
A technology of power electronic devices and heat dissipation structures, which is applied in the direction of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of high production cost, heavy heat dissipation system weight, weak heat dissipation performance, etc., achieve low cost, improve Effect of heat dissipation performance and low thermal expansion coefficient
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0031] The object of the present invention is to provide a power electronic device IGBT module with a heat dissipation structure and a preparation method to solve the problems of heavy weight, high manufacturing cost and weak heat dissipation performance of the IGBT module heat dissipation system in the prior art.
[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be furt...
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