Separate base assembly applicable to monolithic epitaxial furnace

Abstract

The invention provides a separate base assembly applicable to a monolithic epitaxial furnace, which comprises a separate base. The separate base comprises a first part and a second part, wherein the first part comprises a main body part and a hollowing part, and the hollowing part passes through the main body part along the thickness direction of the main body part; the second part comprises a plane part, the shape and the size of the plane part are the same as those of the hollowing part, the second part and the first part are matched for use, and when the second part and the first part are matched, the plane part is embedded in the hollowing part, and the upper surface of the plane part is flush with the upper surface of the main body part adjacent to the outer side of the hollowing part. Through designing the base into two separate parts, requirements of the existing wafer transmission device can be realized without requiring through holes or ejection pins for the base after the twoparts are combined; and besides, the base after combination presents a complete disc shape, the complete disc shape facilitates uniform temperature of wafers, positive indication nanotopography of wafers after epitaxy is improved, and back deposition of the wafers after epitaxy is also reduced.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and particularly relates to a separate base assembly suitable for a monolithic epitaxial furnace. Background technique [0002] The existing mainstream monolithic epitaxial furnaces generally adopt a disk-type base (Susceptor) design. The base is used as a device for displaying the base during epitaxial deposition, which plays a decisive role in the quality of the epitaxial wafer. [0003] An existing base such as figure 1 As shown, the base includes a base body 11, and a plurality of first through holes 12 are provided in the base body 11, and the function of the first through holes 12 is to work smoothly when the Bernoulli sucker is working. Grasping piece; if there is no said first through hole 12, when grabbing pieces, the area sealed between the substrate 15 and the base will form a negative pressure zone, thereby increasing the pressure on the upper and lower surfaces of the substrate 15 ,...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a separate susceptor assembly suitable for monolithic epitaxial furnaces, which is used to solve the problem of the susceptor in the prior art due to the through-hole In the process of epitaxy, it is easy to cause the temperature of the substrate to be uneven, and then cause uneven deposition on the upper and lower surfaces of the substrate, resulting in the deterioration of parameters such as nano-morphology on the surface of the substrate, and due to The base in the prior art uses thimbles, resulting in uneven temperature distribution of the substrate at the position of the thimbles, which in turn causes the above-mentioned thimble imprints on the back of the substrate, and also causes changes in parameters such as nano-morphology on the front of the substrate. worsening problem

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