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Method for extracting and purifying electronic grade hexachlorodisilane and extractive distillation system

A hexachlorodisilane, extraction and rectification technology, applied in halosilane, chemical instruments and methods, silicon compounds, etc., can solve the problems of insufficient purity, high cost, and difficult separation, and achieve low separation difficulty coefficient and low energy consumption The effect of low consumption and low difficulty coefficient

Active Publication Date: 2021-05-07
李金金
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Problems solved by technology

[0004] Aiming at the problems of difficult separation, high energy consumption, high cost, and insufficient purity in the existing hexachlorodisilane distillation and purification, the present invention proposes a method and system for extracting and rectifying hexachlorodisilane, aiming at providing production The specific technical scheme of the hexachlorodisilane product with a purity of 3N-5N is as follows:

Method used

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  • Method for extracting and purifying electronic grade hexachlorodisilane and extractive distillation system
  • Method for extracting and purifying electronic grade hexachlorodisilane and extractive distillation system
  • Method for extracting and purifying electronic grade hexachlorodisilane and extractive distillation system

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Embodiment 1

[0067] 1. Extraction and purification method of electronic grade hexachlorodisilane and extractive distillation system

[0068] Trimethylchlorosilane was selected as the low-density extractant A with a boiling point of 57.7°C at normal pressure, and germanium tetrachloride was selected as the high-density extractant B with a boiling point of 83.1°C at normal pressure to extract and purify hexachlorodisilane. The specific steps were as follows:

[0069] Step 1: No. 1 rectification tower unit is used to remove low-boiling impurities in hexachlorodisilane.

[0070] Such as figure 1 Shown: T100 is the rectification tower No. 1, E100 is the preheater of the rectification tower No. 1, E101 is the condenser of the rectification tower No. 1, E102 is the reboiler of the rectification tower No. 1, and V101 is the raw material of hexachlorodisilane tank, P101 is the conveying pump for the hexachlorodisilane raw material tank, V102 is the discharge tank for the top of the No. 1 rectifica...

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Abstract

The invention discloses a method for extracting and purifying electronic-grade hexachlorodisilane and an extraction and rectification system. The said purification obtains electronic-grade hexachlorodisilane including 3N, 4N and 5N grades through low-density extractant A and high-density extractant B. Extraction and rectification purification are carried out, specifically by removing the low-boiling impurities in hexachlorodisilane, removing the low-density impurities in hexachlorodisilane, removing the extractant A impurities in hexachlorodisilane, and removing the high-density impurities in hexachlorodisilane. Boiling point impurities, removal of high-density impurities in hexachlorodisilane, removal of extractant B impurities in hexachlorodisilane, steps of producing electronic grade hexachlorodisilane, and rectification and recovery of extractant to obtain extractant A and extractant B; Compared with the conventional rectification adsorption process, the extraction and rectification method of the present invention has less energy consumption for purification, and the purification cost is only about 12% to 25% of the cost of the traditional rectification method, and the product quality grade produced by consuming the same energy consumption High, the loss in the purification process is smaller, and the yield of the purified hexachlorodisilane product is higher.

Description

technical field [0001] The invention discloses a method for extracting and rectifying hexachlorodisilane, in particular a method for extracting and purifying electronic-grade hexachlorodisilane and an extracting and rectifying system. Background technique [0002] High-purity hexachlorodisilane, widely used in photovoltaic cells, semiconductor industry, flat panel display industry, large-scale electronic grade polysilicon production and other new material fields Silicon nitride film, and traditional dichlorodihydrogen silicon, silane vapor deposition method silicon film Compared with the hexachlorodisilane vapor deposition method, the deposition temperature is low, the deposition pressure is low, and the deposition efficiency is high, and the obtained silicon film has better insulation, corrosion resistance, and compatibility. At present, conventional rectification and physical adsorption technologies are used in China to remove part of titanium tetrachloride and other impur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107C01G23/02
CPCC01B33/10778C01G23/024
Inventor 李金金
Owner 李金金
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