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Large current 100-fold gain photoelectric detector based on SiC wide forbidden band semiconductor detector

A wide bandgap semiconductor and photodetector technology, which is applied in the field of photoelectric detection and nuclear radiation detection, can solve the problem that the measurement range of photoelectric tubes and photomultiplier tubes is difficult, and the maximum pulse response linear current of photomultiplier tubes is not high, which is difficult to achieve Ampere level and other issues, to achieve the effect of good pulse response linearity, long service life, and fast time response

Active Publication Date: 2018-08-21
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

The dynode or microchannel tube photomultiplier tube uses electron multiplication to achieve signal amplification, and the gain can reach 10 6 Above, single photon detection can be realized, but the maximum pulse response linear current of the photomultiplier tube is not high, generally around 100-200mA, it is difficult to reach

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  • Large current 100-fold gain photoelectric detector based on SiC wide forbidden band semiconductor detector
  • Large current 100-fold gain photoelectric detector based on SiC wide forbidden band semiconductor detector
  • Large current 100-fold gain photoelectric detector based on SiC wide forbidden band semiconductor detector

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0028] The invention proposes a hybrid photodetector based on a SiC wide-bandgap semiconductor detector. The detector has a gain of about 100 times, and at the same time has an ampere-level pulse linear current and a nanosecond-level fast time response, which is suitable for the measurement of strong pulsed radiation fields.

[0029] from figure 1 It can be seen that the photodetector of the present invention mainly includes a vacuum cavity made of a housing and a base and a SiC detector located at the center of the base, and the housing opposite to the detector is an incident window, and the inside of the incident window (i.e. The side opposite to the detector) is covered with a photocathode, and the inner sides of the two shells adjacent to the incident window are respectively provided with metal electrodes, and the photocathode and the metal...

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Abstract

The invention belongs to the field of photoelectric detection and nuclear radiation detection, and particularly relates to a large current 100-fold gain photoelectric detector based on a SiC wide forbidden band semiconductor detector. The photoelectric detector comprises a vacuum cavity and a SiC detector arranged inside the vacuum cavity; one side of the vacuum cavity is an entrance window, the inner side of the entrance window is covered with a photoelectric cathode. Two inner sides of the vacuum cavity adjacent to the entrance window are respectively provided with a metal electrode. The photoelectric cathode and the metal electrode are connected through a resistor; the SiC detector is arranged at the inner side of the vacuum cavity opposite to the entrance window. The incident surface electrode of the SiC detector is grounded. The electrode of the emergent surface is led out of the vacuum cavity. According to the invention, the electric response characteristic of the SiC detector toenergy in the keV magnitude is utilized to obtain the gain of about 100 times, and the maximum linear current of the impulse response of more than 1 ampere is obtained. The connection problem betweenthe current photoelectric tube and the photomultiplier can be well solved.

Description

technical field [0001] The invention belongs to the fields of photoelectric detection and nuclear radiation detection, and in particular relates to a high-current hundred-fold gain photodetector suitable for the measurement of strong pulsed radiation fields. Background technique [0002] Scintillation detectors are a very important type of detectors for pulsed neutron and pulsed gamma measurements. They use photodetectors to measure the fluorescence generated by the interaction between rays and scintillators to detect radiation particles. The key performance parameters such as sensitivity and time response of scintillation detectors depend on the scintillator material on the one hand, and mainly depend on the photodetector used on the other hand. The pulsed radiation field measurement has special requirements on the time response, magnification, linear current and other parameters of the photodetector. In the measurement of the intense pulsed radiation field, the intensity ...

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Application Information

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IPC IPC(8): H01L31/09
CPCH01L31/09
Inventor 陈亮徐鹏霄欧阳晓平赵文锦阮金陆何世熠张忠兵
Owner NORTHWEST INST OF NUCLEAR TECH
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