Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing three-dimensional memory and method for forming crystalline silicon layer

A manufacturing method and memory technology, applied in the field of memory, can solve problems such as the increasingly prominent leakage problem, and achieve the effects of easy control, good electrical performance, and increased grain size

Active Publication Date: 2019-11-08
YANGTZE MEMORY TECH CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the reduction of device size, the leakage problem is becoming more and more prominent in the current NAND memory manufacturing process. Therefore, it is necessary to improve the manufacturing process of NAND memory to avoid unnecessary leakage problems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing three-dimensional memory and method for forming crystalline silicon layer
  • Method for manufacturing three-dimensional memory and method for forming crystalline silicon layer
  • Method for manufacturing three-dimensional memory and method for forming crystalline silicon layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0054] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0055] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

A method for manufacturing a three-dimensional memory, comprising: forming a first insulating layer; using the first insulating layer to form a second insulating layer having a step region and a core region; forming a plurality of first channel holes in the step region; forming a plurality of first channel holes in the core region forming a plurality of second channel holes; forming an amorphous silicon layer at the bottom of the first channel hole and the second channel hole; and irradiating the amorphous silicon layer with laser light to crystallize the amorphous silicon layer. The manufacturing method of the three-dimensional memory provided by the present invention changes the method of forming the silicon layer at the bottom of the channel hole in a growth mode, so it is easier to control the height of the finally formed silicon layer.

Description

technical field [0001] The invention mainly relates to the field of memory technology, in particular to a method for manufacturing a three-dimensional memory and a method for forming a crystalline silicon layer. Background technique [0002] With the continued emphasis on highly integrated electronic devices, there is a continuing need for semiconductor memory devices that operate at higher speeds and lower power and have increased device densities. To this end, devices with smaller dimensions and multilayer devices with transistor cells arranged in horizontal and vertical arrays have been developed. 3D NAND is an emerging type of flash memory developed by the industry. It solves the limitations of 2D or planar NAND flash memory by vertically stacking multi-layer data storage units. It has excellent precision and supports higher capacity in a smaller space. The storage capacity can create a storage device with a storage capacity several times higher than that of similar NAN...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11597
CPCH10B51/20
Inventor 方振
Owner YANGTZE MEMORY TECH CO LTD