Unlock instant, AI-driven research and patent intelligence for your innovation.
A kind of gan HEMT device and preparation method thereof
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A device, N-type technology, applied in the field of GaN HEMT devices and their preparation, can solve the problems of limiting the high-frequency characteristics of GaN HEMT devices, increasing the complexity of the preparation process of the device, and large source-drain parasitic resistance, so as to reduce parasitic capacitance and narrow the gate. The effect of long dimensions, excellent RF characteristics
Active Publication Date: 2022-07-08
WAYTHON INTELLIGENT TECH SUZHOU CO LTD
View PDF9 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0003] Traditional GaN HEMT devices adopt a non-doped barrier layer structure, resulting in relatively large source-drain parasitic resistance, which severely limits the high-frequency characteristics of GaN HEMT devices. In order to improve the RF performance of the device, one way is to use source-drain regrowth The epitaxial technology forms an N-type heavily doped epitaxial layer. The combination of device and epitaxial technology will undoubtedly increase the complexity of the device preparation process, which is not conducive to mass production
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0040] This embodiment provides a GaN HEMT device. refer to figure 1 As shown, the GaN HEMT device includes a substrate 1, a buffer layer 2, a GaN channel layer 3, a barrier layer 4, an N-type cap layer 5, a first passivation layer 6, a first dielectric layer 7, a second passivation layer A metallization layer 8 , a second dielectric layer 9 , a gate metal layer 10 and a source-drain metal layer 11 .
[0041]The buffer layer 2 is stacked on the substrate 1; the GaN channel layer 3 is stacked on the buffer layer 2; the barrier layer 4 is stacked on the GaN channel layer 3; the N-type cap layer 5 is stacked on the barrier layer 4; the source-drain metal layer 11 is stacked on the outer edge of the N-type cap layer 5, the first A passivation layer 6 is also stacked on the N-type cap layer 5, the first dielectric layer 7 is stacked on the first passivation layer 6, the first passivation layer 6 and the The first dielectric layer 7 is located between the source-drain metal layer...
Embodiment 2
[0055] This embodiment provides a preparation method of a GaN HEMT device, comprising the following steps:
[0056] S1, sequentially epitaxially form a buffer layer 2, a channel layer 3, a barrier layer 4 and an N-type cap layer 5 on the substrate 1, such as figure 2 shown;
[0057] S2, sequentially depositing the first passivation layer 6 and the first dielectric layer 7 on the N-type cap layer 5, and selectively removing part of the first passivation layer, part of the first dielectric layer and part of the N-type cap layer by dry etching A cap layer is formed, thereby forming a gate metal region 12 penetrating the middle of the first dielectric layer 7, the first passivation layer 6 and the N-type cap layer 5, such as image 3 and 4 shown;
[0058] S3, sequentially depositing the second passivation layer 8 and the second dielectric layer 9, and performing dry etching on the second passivation layer 8 and the second dielectric layer 9 to make the upper surface of the bar...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
width
aaaaa
aaaaa
width
aaaaa
aaaaa
thickness
aaaaa
aaaaa
Login to View More
Abstract
The invention discloses a GaN HEMT device and a preparation method thereof. The GaN HEMT device includes an N-type cap layer, a first passivation layer, and a first dielectric layer; a gate metal region is provided through the middle of the N-type cap layer, the first passivation layer and the first dielectric layer; the second passivation layer is formed in the gate metal region and covers the N-type cap layer, the side surfaces of the first passivation layer and the first dielectric layer and part of the upper surface of the barrier layer exposed in the gate metal region; the second dielectric layer is formed on the gate metal region The gate metal layer covers the remaining upper surface of the barrier layer, the second passivation layer and the second dielectric layer exposed in the gate metal region and is stacked on the second passivation layer; the second passivation layer and the second dielectric layer are stacked on both sides of the gate metal layer. The N-type cap layer is used to reduce the parasitic resistance of the source and drain, and the second passivation layer and the second dielectric layer stacked on both sides of the gate metal layer are fabricated by the sidewall process to reduce the gate length and parasitic capacitance, thereby obtaining GaN HEMT devices with excellent RF characteristics.
Description
technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a GaN HEMT device and a preparation method thereof. Background technique [0002] The research and application of GaN materials and devices is currently the frontier and hotspot of global semiconductor research. GaN materials are known as third-generation semiconductor materials together with SiC and diamond materials. GaN material has the advantages of wide band gap, high critical breakdown electric field, high electron saturation velocity, high thermal conductivity, and high concentration of two-dimensional electron gas at the heterojunction interface. It is an ideal substitute for next-generation power and radio frequency devices. [0003] The traditional GaN HEMT device adopts an undoped barrier layer structure, resulting in a relatively large source-drain parasitic resistance, which severely limits the high-frequency characteristics of the GaN HEMT device. In order to i...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More