Germanium-based silicon germanium reduced-field layer LDMOS device structure

Abstract

The invention discloses a germanium-based silicon germanium reduced-field layer LDMOS device structure which comprises a P-type germanium channel layer, an N-type doped germanium drift layer, a heavy N-doped germanium ohmic contact layer, a growth layer with separation of silicon germanium and germanium as a drift layer, a P type doped silicon germanium drift reduced field layer, a gate slot structure with a depth reaching the P-type germanium channel layer, an oxide dielectric layer formed in a gate slot, a gate metal layer formed in the gate slot, and source and drain metal electrodes formed at source and drain areas in order.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a germanium-based semiconductor LDMOSFET device structure. Background technique [0002] Integrated circuits based on silicon-based CMOS technology have developed rapidly, and the application of silicon-based LDMOSFET devices in the fields of high-frequency and high-voltage devices and integrated circuits has gradually expanded. However, the radio frequency performance and withstand voltage capability of silicon-based LDMOSFET devices still need to be further improved. At present, with the gradual application of germanium semiconductor materials in silicon-based CMOS technology and the continuous development of epitaxial technology, the characteristics of germanium-based MOSFET devices have made significant progress. If germanium semiconductor materials are introduced into silicon-based LDMOSFET devices, it will inevitably improve the device performance. RF performanc...

AI Technical Summary

Problems solved by technology

However, the RF performance and withstand voltage capability of silicon-based LDMOSFET devices still need to be further improved

Images