49results about How to "Improve RF characteristics" patented technology

In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.

The invention discloses a low-temperature sintering ceramic dielectric material comprising the following components by weight percent: 50-70wt% of main crystal phase, 0-13.4wt% of modified additive and 16.6-40.5wt% of glass fusion aid. The main crystal phase is alumina Al2O3. The modified additive is one or several of BaO, TiO2, MgO and CaO. The glass fusion aid is one or several of SiO2, ZnO, B2O3 and BiO. The method for preparing a ceramic capacitor by the ceramic dielectric material comprises the processes of pulping, flow casting, silk screen printing, laminating, cutting, sintering and end capping, and the sintering temperature is 800-1000 DEG C. The dielectric material conforms to the NPO ceramic dielectric property and has good environmental-protection property, high material dispersivity, good formation process and no cracking when being sintered.

HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

The invention discloses a GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) device and a preparation method thereof. The GaN HEMT device comprises an N-type cap layer, a first passivationlayer and a first dielectric layer, wherein a gate metal region is penetrated in the middle parts of the N-type cap layer, the first passivation layer and the first dielectric layer; a second passivation layer is formed in the gate metal region and covers the lateral surfaces of the N-type cap layer, the first passivation layer and the first dielectric layer exposed in the gate metal region and apart of the upper surface of a barrier layer; a second dielectric layer is formed in the gate metal region and is superposed on the second passivation layer; a gate metal layer covers the residual upper surface of the barrier layer exposed in the gate metal region, the second passivation layer and the second dielectric layer; and the second passivation layer and the second dielectric layer are superposed at two sides of the gate metal layer. The N-type cap layer is adopted to reduce the parasitic resistance of a source and a drain, and a lateral wall process is adopted to manufacture the second passivation layer and the second dielectric layer which are superposed at two sides of the gate metal layer to reduce the gate length size and reduce the parasitic capacitance, thereby obtaining the GaN HEMT device with excellent radio frequency characteristics.

The invention relates to an electrothermal-driven in-plane bistable radio frequency microswitch belonging to the technical field of micro electromechanics. The electrothermal-driven in-plane bistable radio frequency microswitch comprises an electrothermal-driven mechanism, a mechanical locking mechanism and a signal conversion mechanism, wherein the electrothermal-driven mechanism is positioned under the mechanical locking mechanism; and the mechanical locking mechanism is connected with the signal conversion mechanism. The invention can realize the mechanical locking by using a pair of locking contacts, does not require continuous power consumption when keeping in a stable state, also fully develops the advantages of large driving force, high displacement power density and convenient integrated manufacture of an electrothermal driver and can be used as the actuation form of the mechanical locking structure of the switch. The switch has simple structure, foreseeable radio frequency (RF) characteristic, possibility of batch manufacture and practical application and suitability for integral manufacture.

An antenna module (1) according to the present disclosure has a dielectric substrate (20), an array antenna (10) including a plurality of patch antennas (111), an RFIC (40) electrically connected to the plurality of patch antennas (111), a signal conductor post (131) electrically connected to the RFIC (40), and a ground conductor post (132) set at a ground potential. The ground conductor post (132) is arranged, when viewed from a direction perpendicular to a first main surface of the dielectric substrate (20), between the signal conductor post (131) and a first side surface closest to the signal conductor post (131) of the dielectric substrate (20) in a polarizing direction of radio frequency signals to be emitted or received by the plurality of patch antennas (111).

A multilayer coil component includes a multilayer body formed by stacking a plurality of insulating layers and including a coil built therein, and first and second outer electrodes electrically connected to the coil. The coil is formed by electrically connecting a plurality of coil conductors stacked together with the insulating layers. The multilayer coil component further includes, inside the multilayer body, first and second connecting conductors. The first connecting conductor connects between a portion of the first outer electrode covering the first end face, and a coil conductor facing the portion. The second connecting conductor connects between a portion of the second outer electrode covering the second end face, and a coil conductor facing the portion. Concerning the length direction, the first and second connecting conductors each have a length from about 2.5% to about 7.5% of the length of the multilayer body.

The invention discloses a radio frequency switch circuit. The radio frequency switch circuit comprises a grid voltage control module for establishing the grid control voltage (VCG) for controlling on-off of a switch module, a body voltage control module for establishing the body control voltage (VCB) for controlling on-off the switch module and the switch module controlled by the grid control voltage (VCG) and the body control voltage (VCB) to connect or not connect a radio frequency input signal (RFin) to a radio frequency output end (RFout). The radio frequency switch circuit can optimize and reduce the on resistance (Ron) at a circuit layer and optimize the on-off time.

The invention discloses a detuning magnetic resonance radio frequency coil without an external direct current circuit. The detuning magnetic resonance radio frequency coil comprises a driving detuning circuit and a resonance capacitor, wherein the driving detuning circuit and the resonance capacitor are in serial connection, two parallel resonance inductors formed by coated copper of a printed circuit board are arranged between the driving detuning circuit and the resonance capacitor, and the two parallel resonance inductor form a loop and are connected with a direct-current power supply used for driving the driving detuning circuit. The detuning magnetic resonance radio frequency coil has the advantages of mutually offsetting magnetic fields generated by direct current to the maximum degree and being small in effect on evenness of a main field, small in cross interference, good in radio frequency characteristic, small in occupancy and simple in circuit structure.

The invention relates to a flexible thin film radio frequency switch which comprises a substrate. The substrate is a flexible substrate, a SU8 adhesive layer is arranged on the substrate, and a first PIN diode, a second PIN diode, an input end, an output end and a ground terminal are respectively arranged on the upper surface of the SU8 adhesive layer, wherein one end of the first PIN diode is connected with the input end by a metal interconnection line; the other end of the first PIN diode is respectively connected with the output end and one end of the second PIN diode by metal interconnection lines; and the other end of the second PIN diode is connected with the ground terminal by a metal interconnection line. The invention provides the switch which is developed by combining a thin film transfer process and utilizing the flexible PIN diodes and can be applied to the field of flexible radio frequency. A production process of the flexible thin film radio frequency switch disclosed by the invention is completely compatible to a flexible thin film diode, the PIN diodes and the like. The flexible thin film radio frequency can be applied to numerous wireless portable devices, such as a mobile phone and a radar system. By combined use of the monocrystal silicon thin film transfer process, the switch with a low parasitic resistance and a high radio frequency characteristic is implemented.

A radio frequency signal RF is input to a base of each of transistors TR1 through TRn via a corresponding capacitor among capacitors C1 through Cn, is amplified, and is output from a collector of each of the transistors TR1 through TRn. An emitter of each of the transistors TR1 through TRn is grounded. A bias voltage DC given from a bias circuit Bias is supplied to the base of each of the transistors TR1 through TRn via a corresponding resistor among resistors Ra1 through Ran. A signal line for the bias voltage DC is connected to an input line for the radio frequency signal RF via the bridge resistor R in a direct current manner.

The invention discloses an III-V MOS device and a production method. The production method comprises the following sequential steps: forming a channel layer on a semiconductor layer on a substrate; forming an ohmic contact layer on the semiconductor channel layer; making silicon dioxide medium pores in the ohmic contact layer; etching the ohmic contact layer by an etching method; making a SiO2 side wall; depositing a high-k medium in the channel by an atom layer depositing method; making a gate metal; etching the high-k medium and silicon dioxide except the gate metal by taking the gate metal as a mask to expose the ohmic contact layer; and depositing source-drain metals in an active area by an evaporation technology to finish the production of the MOSFET device. The production method of the device can be used for producing a digital integrated circuit; and after the production of gate and source and gate-source gap, the radio-frequency characteristic is improved, and the method also can be applied to a radio-frequency integrated circuit.

The invention discloses a radiofrequency LDMOS (laterally diffused metal oxide semiconductor) device. Drift regions are uneven doping structures; a first drift region, a third drift region and a second drift region are sequentially arranged between a channel and a drain region; the doping concentration of the first drift region is minimum, the strength of an electric field nearby a channel region and a hot carrier effect can be reduced, and the reliability of the device is improved; the doping concentration of the second drift region is high, and the switch-on resistance of the device can be reduced; and by a contra-doping covering layer formed on the surface of the second drift region, the drift regions can run out effectively, the outputting capacitance of the device is reduced, influences of charge and an interface state of shielding dielectric layer without a Faraday shield layer can be avoided, and the characteristics of the device are stable. The second drift region is a transition region, and the driving current of the device can be increased further and the switch-on resistance of the device can be reduced under the condition that the reliability and the outputting capacitance of the device are not affected. The invention also discloses a manufacturing method of the radiofrequency LDMOS device.

A dielectric ceramic composition suitable for radio frequency applications, comprising a crystalline main component having a perovskite crystal structure, and an auxiliary component. The crystalline main component is represented by the following chemical formula: (1-x)MeTiaO1+2a-xLn(Ma1/2Mb1/2)bO(3+3b)/2 wherein Me is at least one of Ca and Sr; Ln is a rare earth element; Ma is at least one of Mg and Zn; Mb is at least one of Sn and Zr; x represents the mole fraction of Ln(Ma1/2Mb1/2)bO(3+3b)/2 ; and a and b represent the molar ratio, where 0.95≤a≤1.05, 0.9≤b≤1.05 and 0.3≤x≤0.5. The auxiliary components contain B and Si. The composition can be sintered at a temperature of 1,000°C or lower. An electronic component includes a ceramic component of a dielectric ceramic composition, and a conductor placed inside the ceramic component.

The present invention discloses to an SMA connector, a preferable embodiment of which comprises a body acting as ground, a central conductor existing in the inner part of the ground, an insulator with a predetermined dielectric constant existing between the body and the central conductor, a first step transition part formed in the body, a taper formed in the central conductor in order to improve RF characteristics and to fix the central conductor and the insulator, and a second step transition part formed in the central conductor corresponding to the first step transition part to improve RF characteristics.

The invention discloses a germanium-based silicon germanium reduced-field layer LDMOS device structure which comprises a P-type germanium channel layer, an N-type doped germanium drift layer, a heavy N-doped germanium ohmic contact layer, a growth layer with separation of silicon germanium and germanium as a drift layer, a P type doped silicon germanium drift reduced field layer, a gate slot structure with a depth reaching the P-type germanium channel layer, an oxide dielectric layer formed in a gate slot, a gate metal layer formed in the gate slot, and source and drain metal electrodes formed at source and drain areas in order.

The invention provides a deep groove filling structure and a manufacturing method of the deep groove filling structure. The manufacturing method includes the steps of providing a substrate, sequentially forming a buried oxide layer and a semiconductor layer which are located on the substrate, forming lateral walls on the lateral wall body of the buried oxide layer and the lateral wall body of the semiconductor layer, using the lateral walls as masks, removing partial substrate materials in contact with the buried oxide layer in the substrate direction, forming a groove defined by the remain substrate, the buried oxide layer and the lateral walls, forming an intrinsic semiconductor layer in the groove, and forming an isolation structure at the position, where the the intrinsic semiconductor layer is formed, of the groove. The deep groove filling structure comprises the substrate, the buried oxide layer and the semiconductor layer, and the buried oxide layer and the semiconductor layer are sequentially located on the substrate. The groove extending to the position below the semiconductor layer is formed in the lateral wall of the substrate, and the intrinsic semiconductor layer is arranged in the groove. According to the deep groove filling structure and the manufacturing method of the deep groove filling structure, the output signal distortion problem can be solved.