Semiconductor device and method of forming the same

Abstract

The invention provides a semiconductor device and a forming method thereof. The forming method of the semiconductor device includes: providing first and second wafers; forming a plurality of trenches; forming a first oxide layer on the second wafer; The circle is bonded to the first wafer, the first wafer is used as the substrate of the semiconductor device, the first oxide layer is used as the buried oxide layer, and the second wafer is used as the top silicon for forming the device. The semiconductor device includes: a substrate; a second oxide layer located on the surface of the substrate; a first oxide layer; the first and second oxide layers together form a buried oxide layer; a first side of the substrate opposite to the buried oxide layer There are a plurality of trenches; the semiconductor device also includes a top layer of silicon formed on the buried oxide layer. The beneficial effect of the present invention is that the carriers accumulated on the surface of the substrate close to the buried oxide layer will be blocked by the trench, reducing the impact of the carriers on the capacitance, thereby reducing the variable capacitance of the interface under the buried oxide layer. With the amount of change, the radio frequency characteristics of the semiconductor device are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In the field of radio frequency communication, silicon on insulator (Silicon On Insulator, SOI) technology has been widely used in order to optimize the radio frequency characteristics of semiconductor devices. The specific SOI technology is to isolate the silicon substrate silicon from the top layer silicon used to form semiconductor devices by forming a buried oxide layer. [0003] However, today’s market requirements for chip performance are gradually increasing. For example, in the field of radio frequency communications, the market requires the chip’s anti-interference ability against radio frequency signals to be enhanced, and the accuracy of the chip’s signal transmission should also be improved; while relying on existing silicon-on-insulator technology manufacturing Semiconductor...

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Problems solved by technology

[0003] However, today’s market requirements for chip performance are gradually increasing. For example, in the field of radio frequency communications, the market requires the chip’s anti-interference ability against radio frequency signals to be enhanced, and the accuracy of the chip’s signal transmission should also be improved; while relying on existing silicon-on-insulator technology manufacturing Semiconductor devices have become increasingly difficult to meet these demands

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