Flexible thin film radio frequency switch

A technology of radio frequency switch and flexible film, which is applied in the direction of diodes, circuits, semiconductor devices, etc., and can solve problems such as switches are not easy to bend, flexible systems are not compatible, etc.

Pending Publication Date: 2017-02-22
TIANJIN UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional rigid silicon-based switches are not easily bendable and incompatible with flexible systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible thin film radio frequency switch
  • Flexible thin film radio frequency switch
  • Flexible thin film radio frequency switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] A flexible membrane radio frequency switch of the present invention will be described in detail below with reference to the embodiments and drawings.

[0021] A flexible film radio frequency switch of the present invention is mainly composed of two PIN diodes connected in series. Combined with the thin film transfer process, flexible PIN diodes are used to develop switches that can be applied to the field of flexible radio frequency. The manufacturing process is fully compatible with flexible thin film transistors and PIN diodes.

[0022] like figure 1 , figure 2 As shown, a flexible thin film radio frequency switch of the present invention includes a substrate 1 for supporting the main part of the flexible radio frequency switch. The substrate 1 is a flexible substrate, and the flexible substrate 1 is PET plastic, PEN plastic or PI plastic. The substrate 1 is provided with an SU8 adhesive layer 2, and the upper surface of the SU8 adhesive layer 2 is respectively pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a flexible thin film radio frequency switch which comprises a substrate. The substrate is a flexible substrate, a SU8 adhesive layer is arranged on the substrate, and a first PIN diode, a second PIN diode, an input end, an output end and a ground terminal are respectively arranged on the upper surface of the SU8 adhesive layer, wherein one end of the first PIN diode is connected with the input end by a metal interconnection line; the other end of the first PIN diode is respectively connected with the output end and one end of the second PIN diode by metal interconnection lines; and the other end of the second PIN diode is connected with the ground terminal by a metal interconnection line. The invention provides the switch which is developed by combining a thin film transfer process and utilizing the flexible PIN diodes and can be applied to the field of flexible radio frequency. A production process of the flexible thin film radio frequency switch disclosed by the invention is completely compatible to a flexible thin film diode, the PIN diodes and the like. The flexible thin film radio frequency can be applied to numerous wireless portable devices, such as a mobile phone and a radar system. By combined use of the monocrystal silicon thin film transfer process, the switch with a low parasitic resistance and a high radio frequency characteristic is implemented.

Description

technical field [0001] The invention relates to a radio frequency switch. In particular, it relates to a flexible thin film radio frequency switch based on a flexible thin film PIN diode. Background technique [0002] In the past decade, flexible electronic devices have developed rapidly, and many researchers have devoted themselves to their research. Various electronic products have been developed, including flexible displays, electronic tags, and some low-cost integrated circuits. In addition, some electronic products need to operate normally under microwave radio frequency, such as portable wireless devices, communication antennas, space remote sensing and military applications, etc. Flexible electronics are lighter and more shock-resistant than those based on rigid circuits. As of today, high-speed flexible thin-film transistors on low-cost PET substrates can be incorporated into some amplifier components. Conventional hard silicon-based switches are not easily benda...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/74
CPCH03K17/74
Inventor 秦国轩黄治塬刘昊靳萌萌党孟娇王亚楠
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap