Mask developing method and apparatus

A development method and a technology of a development device, which are applied in the field of mask development, can solve the problems that the uniformity of the development line width is greatly affected, and the uniformity of the width of the developer solution is poor, so as to shorten the coating time, improve the uneven coverage, and improve Effect of Line Width Uniformity

Pending Publication Date: 2018-08-31
WUXI ZHONGWEI MASK ELECTRONICS
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, development has a great influence on the uniformity of line width. In the past development method, a number of spray pipes are arranged above the film forming platform, and then each spray pipe is connected to a nozzle, so that the developer sprayed by the nozzle is coated on the Fixed on the mask of the forming table, since the nozzle cannot cover all the areas, it will cause the problem of poor strip width uniformity caused by uneven developer coverage at the center and edges

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask developing method and apparatus
  • Mask developing method and apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] A method for developing a mask: a developing nozzle is arranged directly above a circular carrying platform, the cross section of the developing nozzle is in a rectangular shape, the length of the diagonal of the developing nozzle is not less than the diameter of the circular carrying platform, and the developing The nozzles are arranged horizontally parallel to the circular bearing platform, and the lower end surface of the developing nozzle is evenly distributed with spray holes arranged in a rectangular array, and the spray holes are arranged vertically downwards, and the mask is fixed on the upper surface of the bearing platform, and the bearing platform is driven While rotating, the developing nozzle pumps the developing solution through the liquid pump and covers the area corresponding to the lower mask through the spray hole. During the rotation of the mask, the developing solution evenly covers the center and edge of the mask.

[0022] The area center of the deve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a mask developing method. The invention also provides a developing apparatus adopting the method. By virtue of the developing method and apparatus, uniform covering of a developing liquid in the center and the edge of a mask can be ensured, and developing with mask strip width uniformity can be realized. The mask developing method is characterized in that a developing sprayer is arranged above a circular bearing table; the developing sprayer has a rectangular transverse section; the length of the diagonal of the developing sprayer is not less than the diameter of the circular bearing table, and the developing sprayer is arranged horizontally parallel to the circular bearing table; spraying holes in rectangular array distribution are uniformly distributed in the lowerend plane of the developing sprayer; the spraying holes are arranged in a perpendicularly downward manner; the mask is fixedly mounted on the upper end plane of the bearing table; when the bearing table is driven to rotate, the developing sprayer pumps the developing liquid through a liquid pump to pass through the spraying holes to cover the surface region corresponding to the mask on the lowerside; and in the mask rotating process, the developing liquid uniformly covers the center and the edge of the mask.

Description

technical field [0001] The invention relates to the technical field of mask development, in particular to a mask development method, and the invention also provides a development device using the method. Background technique [0002] Due to the effect of Moore's law, semiconductor devices become smaller and smaller, and the size of the pattern formed on the wafer is also reduced. With the increase of the wafer size and the improvement of the development resolution requirements, the bar The requirement for width uniformity is also increasing. Since the stripe width of the mask and the wafer has a certain proportional projection relationship, the requirement for the stripe width uniformity of the mask is also becoming more and more stringent. Among them, development has a great influence on the uniformity of line width. In the past development method, a number of spray pipes are arranged above the film forming platform, and then each spray pipe is connected to a nozzle, so tha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/30
CPCG03F7/30G03F7/3057
Inventor 尤春
Owner WUXI ZHONGWEI MASK ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products