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Locating defects in electron beam images

An electron beam, image-based technology, applied in the field of determining the location of defects, can solve the problems of optical image distortion that is not robust, time-consuming, manual, etc.

Active Publication Date: 2019-09-06
KLA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process is completely manual and time-consuming, which requires a lot of experience
Furthermore, even for logical regions, current methods are not robust to optical image distortions

Method used

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  • Locating defects in electron beam images
  • Locating defects in electron beam images
  • Locating defects in electron beam images

Examples

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Embodiment Construction

[0026] The terms "design" and "design data" as used herein generally refer to the physical design (layout) of an IC and data derived from the physical design through complex simulations or simple geometric and Boolean operations. The physical design may be stored in a data structure such as a graphics data stream (GDS) file, any other standard machine-readable file, any other suitable file known in the art, and a design database. A GDSII file is one of a class of files used to represent design layout data. Other examples of such files include GL1 and OASIS files and proprietary file formats such as RDF data, which are proprietary to KLA-Tencor of Milpitas, CA. Additionally, images of the master reticle and / or derivatives thereof acquired by the master reticle inspection system may be used as one or more "proxy" for the design. This master reticle image, or derivatives thereof, may be used as a substitute for a design layout in any of the embodiments described herein that use ...

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PUM

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Abstract

The present invention provides methods and systems for determining the location of defects in an electron beam image of a wafer. A method includes determining a second location of the defect relative to a pattern imaged in a test image based on a first location of the defect in a differential image. The method also includes: determining a third location of the defect relative to the pattern in an electron beam image for the defect; and determining an association between the first and third locations. Additionally, the method includes determining the location of the other defect in the electron beam image based on the first location of the other defect in the differential image and the determined association.

Description

technical field [0001] The present invention generally relates to methods and systems for determining the location of defects in an electron beam image of a wafer. Background technique [0002] The following description and examples are not admitted to be prior art by inclusion in this paragraph. [0003] Fabricating semiconductor devices, such as logic and memory devices, typically involves processing substrates, such as semiconductor wafers, using numerous semiconductor fabrication processes to form various features and multiple levels of the semiconductor device. For example, photolithography is a semiconductor manufacturing process that involves the transfer of a pattern from a master reticle to a resist disposed on a semiconductor wafer. Additional examples of semiconductor fabrication processes include, but are not limited to, chemical mechanical polishing (CMP), etching, deposition, and ion implantation. Multiple semiconductor devices may be fabricated in an arrange...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06T7/00H01J37/22H01L21/66G06T7/73
Inventor 李胡成戈文达拉扬·塔达伊孙达拉姆
Owner KLA CORP