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Substrate cleaning method and substrate cleaning device, and method of selecting cluster generating gas

A technology for generating gas and cleaning devices, applied in cleaning methods and utensils, chemical instruments and methods, electrical components, etc., can solve problems such as enlargement, fine pattern damage, difficult to remove objects, etc., to reduce supply pressure, eliminate Large-scale, uncomplicated effects

Active Publication Date: 2018-08-31
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the speed of the generated gas clusters or aerosols is slow, and it is difficult to efficiently remove tiny objects to be removed
In addition, large-sized gas clusters are difficult to remove particles in fine patterns, and the possibility of causing damage to fine patterns will also increase

Method used

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  • Substrate cleaning method and substrate cleaning device, and method of selecting cluster generating gas
  • Substrate cleaning method and substrate cleaning device, and method of selecting cluster generating gas
  • Substrate cleaning method and substrate cleaning device, and method of selecting cluster generating gas

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Embodiment Construction

[0039] The inventors have made repeated studies in order to obtain gas clusters capable of efficiently removing fine particles without using a complicated and large-scale device. As a result, it was found that the smaller the particle to be removed, the more important it is to increase the total energy of the constituent molecules of the cluster colliding with the particle to provide the energy required for its removal (= colliding molecule energy of a single molecule), this point is particularly significant when removing particles inside a pattern with a narrow spatial width. And, based on this, the inventors have found that it is more effective to select the gas type of the cluster-forming gas based on the product of the energy K and the index C, wherein the above-mentioned energy K is to convert the cluster-forming gas from the cluster to The energy of a single molecule or single atom when ejected from the nozzle, the index C above is an index value indicating the ease of c...

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Abstract

As a cluster generating gas, use is made of a gas selected on the basis of the value of Phi, which is the product of the energy K per molecule or atom of the cluster generating gas when ejected from acluster nozzle, as expressed by formula (1), and an index C representing the ease with which the gas forms clusters, as expressed by formula (2). In the formulae, kB: Boltzmann constant, Gamma: specific heat ratio of cluster generating gas, m: mass of cluster generating gas, v: speed of cluster generating gas, T0: gas supply temperature, and Tb: boiling point of cluster generating gas.

Description

technical field [0001] The present invention relates to a substrate cleaning method using gas clusters, a substrate cleaning device and a method for selecting gas clusters. Background technique [0002] In the manufacturing process of semiconductor devices, since the particles attached to the semiconductor substrate may cause product defects, cleaning treatment for removing the particles attached to the substrate is required. As such a substrate cleaning technique, a technique of irradiating the surface of the substrate with gas clusters and utilizing their physical action to remove particles on the surface of the substrate has attracted attention. [0003] For example, Patent Document 1 proposes a CO 2 Or Ar clusters, making it collide with the substrate for physical cleaning. However, in recent years, there has been a need to remove tiny particles on the order of submicron to nanometer. In order to efficiently remove such tiny particles, it is necessary to use high-speed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCH01L21/67017H01L21/67028H01L21/67248H01L21/67253H01L21/02096H01L21/02046B08B7/0071H01L21/02337H01L21/304H01L21/67034H01L21/02041H01L21/67051
Inventor 土桥和也
Owner TOKYO ELECTRON LTD