A kind of preparation method of palladium diselenide two-dimensional crystalline film layer

Abstract

The invention provides a preparation method of a palladium diselenide two-dimensional crystalline state film layer. The preparation method comprises the following steps that 100, a base with silicon carbide as a base body and a graphene layer manufactured on the surface is prepared; 200, the temperature of the base is kept within the growth temperature range of selenium and palladium; and 300, selenium atoms and palladium atoms are generated from pure selenium and pure palladium in an evaporation way according to the reaction ratio and deposited on the base, and the selenium atoms and the palladium atoms are reacted on the base to form the two-dimensional ordered crystalline state film layer composed of the atoms, wherein in the film layer, the selenium atoms and the palladium atoms are distributed in a selenium-palladium-selenium overlaid state. By means of the method, the current situation that only palladium diselenide blocks can be obtained in the prior art is solved, the atomic-scale palladium diselenide film layer can be obtained, and convenience is brought to research on physical properties of palladium diselenide and relevant devices by sufficiently utilizing palladium diselenide.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a preparation method for obtaining a double-layer film structure of palladium diselenide in a two-dimensional crystal state. Background technique [0002] Since the discovery of graphene film in 2004, it has become a research hotspot due to its unique electronic structure and physical properties. Graphene has excellent physical properties such as extremely high electron mobility, high thermal conductivity, high mechanical strength, and light transmittance, making it widely used in integrated circuits, gas molecular sensors, supercapacitors, flexible transparent electrodes, and terahertz devices. important application prospects. However, since graphene itself has no energy gap, it cannot build a pn junction like traditional semiconductors, which greatly limits the application of graphene in semiconductors and other fields. [0003] Based on the excellent characteristics ...

AI Technical Summary

Problems solved by technology

However, there is currently no mature method for obtaining the thickness of the palladium diselenide atomic group, and the palladium diselenide thin film can only be obtained by tape stripping, which is inefficient and impossible to be widely used in industry

[0005] In addition, as a semiconductor two-dimensional material, the controllable modulation of the semiconductor energy band of palladium diselenide is also of great significance to its application, although theoretical calculations have now reported that the energy gap of palladium diselenide bulk material is 0.03eV , but it has not been confirmed experimentally, especially the preparation of two-dimensional crystalline films of palladium diselenide has not yet been reported.

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