Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Packaging method and packaging structure of piezoelectric acoustic wave device

A piezoelectric acoustic wave and packaging method technology, which is applied in the direction of electrical components and impedance networks, can solve the problems of instability in the effective active area of ​​piezoelectric acoustic wave devices and deterioration of device performance, and achieve high packaging yield, better stability, and good stability effect

Active Publication Date: 2021-12-14
SUZHOU HUNTERSUN ELECTRONICS CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of the existing technology, there will inevitably be a gap between the effective active area of ​​the piezoelectric acoustic wave device and the sealing wall, so a small amount of sealing material will still pass through the sealing wall during the formation of the sealed shell. Gaps into the inside of the seal wall
If the sealing material entering the inner side of the sealing wall comes into contact with the active active area of ​​the piezoelectric acoustic wave device, it will lead to the deterioration of the performance of the device
That is to say, since the method of forming a sealing wall on the substrate in the prior art cannot completely avoid the contact between the sealing material and the effective active area of ​​the piezoelectric acoustic wave device, the packaging of the piezoelectric acoustic wave device in this way still has a negative impact on the piezoelectric acoustic wave device. Potential for Instabilities Caused by the Active Active Region of Acoustic Devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging method and packaging structure of piezoelectric acoustic wave device
  • Packaging method and packaging structure of piezoelectric acoustic wave device
  • Packaging method and packaging structure of piezoelectric acoustic wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] In order to better understand and illustrate the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0056] The invention provides a packaging method for a piezoelectric acoustic wave device. Please refer to figure 1 , figure 1 It is a flowchart of a packaging method for a piezoelectric acoustic wave device according to a specific embodiment of the present invention. As shown, the encapsulation method includes:

[0057] In step S101, a bare chip for forming a piezoelectric acoustic wave device is provided, the surface of the bare chip is provided with a plurality of metal ports, and the plurality of metal ports are distributed outside the effective active area of ​​the bare chip;

[0058] In step S102, a sealing wall surrounding the effective active area is formed on the surface of the bare chip;

[0059] In step S103, forming conductive bumps on multiple metal ports of the bare chip;

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a packaging method for a piezoelectric acoustic wave device, the packaging method comprising: providing a bare chip, the surface of the bare chip is provided with a plurality of metal ports, and the plurality of metal ports are distributed outside the effective active area of ​​the bare chip ; Form a sealing wall surrounding the effective active area on the surface of the bare chip; Form conductive bumps on a plurality of metal ports of the bare chip; Provide a substrate, one surface of the substrate is provided with a plurality of metal ports connected to the bare chip Corresponding to the first pad, the other surface is provided with a second pad; the conductive bumps of the bare chip are electrically connected to the first pad of the substrate through a flip-chip process; the substrate is formed on the substrate to cover the bare chip sealed casing. Correspondingly, the present invention also provides a packaging structure of the piezoelectric acoustic wave device. The implementation of the invention transfers the instability of the traditional sealing process to the surface of the substrate, thereby effectively protecting the effective active area of ​​the piezoelectric acoustic wave device.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a packaging method and packaging structure of a piezoelectric acoustic wave device. Background technique [0002] In communication and other electrical fields, piezoelectric acoustic wave devices are frequently used as radio frequency and intermediate frequency filters to achieve frequency selection and other electrical functions due to their small size, excellent performance, and suitability for mass production. The work of piezoelectric acoustic wave devices depends on the excitation, transmission and conversion of acoustic waves, including surface acoustic waves and bulk acoustic waves. When the piezoelectric acoustic wave device works, the acoustic wave is transmitted along or very close to the surface of the piezoelectric material, or in its body. Among them, the effective area where the electric energy-sound energy-electrical energy conversion is realized i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/10H03H9/17H03H9/54H03H9/64H03H3/08H03H3/02
CPCH03H3/02H03H3/08H03H9/1042H03H9/1064H03H9/17H03H9/54H03H9/64
Inventor 田晓洁赖亚明谢恒赖志国蔡洵
Owner SUZHOU HUNTERSUN ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products