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Three-dimensional memory and data operation method thereof

A technology of data operation and operation method, applied in the field of flash memory, can solve problems such as reducing the service life of the memory, and achieve the effects of improving the service life, facilitating data reading and data writing, and preventing damage

Active Publication Date: 2018-09-11
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a three-dimensional memory and its data operation method in order to overcome the defect that the service life of the memory is reduced due to some structures and data operation methods of the three-dimensional memory in the prior art

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Embodiment Construction

[0076] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. Note that the aspects described below in conjunction with the drawings and specific embodiments are only exemplary, and should not be construed as limiting the protection scope of the present invention.

[0077] The following description is given to enable a person skilled in the art to make and use the invention and incorporate it into a specific application context. Various modifications, and various uses in different applications will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to a wide range of embodiments. Thus, the present invention is not limited to the embodiments given herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0078] In the following detailed description, numerous specific details are set forth in or...

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Abstract

The invention provides a three-dimensional memory and a data operation method thereof. The memory includes: a substrate; a stack layer positioned on the substrate, wherein the stack layer includes a plurality of grid layers arranged at intervals in a direction perpendicular to the substrate; channel holes passing through the stack layers; channel layers inside the channel holes; and drain layers positioned on the channel layers, wherein each drain layer includes a top P-type region and a bottom N-type region that form a PN junction. According to the invention, a data operation mode is changedmainly by changing the structure of the drain layers, data erasing can be realized through the drain layers without high voltage, and data reading and data writing are convenient, thereby preventing damage to a device and prolonging the service life of the three-dimensional memory.

Description

technical field [0001] The invention relates to the field of flash memory, in particular to a three-dimensional memory and a data operation method thereof. Background technique [0002] In order to meet the development of high-efficiency and low-cost microelectronics industry, semiconductor memory devices need to have higher integration density. Regarding semiconductor memory devices, because their integration density is very important in determining product prices, that is, high-density integration is very important. For traditional two-dimensional and planar semiconductor storage devices, because their integration density mainly depends on the unit area occupied by a single storage device, the integration degree is very dependent on the quality of photolithography and masking process. However, even if expensive process equipment is continuously used to improve the precision of lithography and mask processes, the improvement of integration density is still very limited. ...

Claims

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Application Information

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IPC IPC(8): H01L27/11582H01L27/1157G11C16/26
CPCG11C16/26H10B43/35H10B43/27
Inventor 刘峻霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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