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A quantum dot light-emitting diode device and its preparation method
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A quantum dot light-emitting and diode technology, which is applied in the field of quantum dots, can solve the problems of short service life and low light extraction efficiency, and achieve the effects of avoiding oxidation and corrosion, increasing light extraction efficiency, and prolonging service life
Active Publication Date: 2020-07-21
TCL CORPORATION
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[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode device and its preparation method, aiming to solve the problems of the existing quantum dot light-emitting diode devices with short service life and low light extraction efficiency
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Embodiment 1
[0051] use as figure 1 The ITO glass shown (the size of the glass is 2cm×2cm×2mm, Φ=90°, the groove size is 1.5cm×1.5cm×1mm) is placed in the detergent solution, the surface is cleaned with a brush, and then placed Clean with ultrasonic vibration in isopropanol for 20 minutes, then rinse the glass surface with ultra-pure water, then put it into a beaker of ultra-pure water for 10 minutes, wash it with N 2 The air gun dries the glass.
[0052] according to image 3 The film is coated on the glass as shown, and the SiNx film (insulation layer) is deposited by plasma chemical vapor emission (PECVD) in the area without film, and then the film is cleaned with an organic solvent; PECVD deposition process parameters: RF source frequency 13.56MHz , the deposition temperature is 200°C, the RF power is 150W, the working pressure is 133Pa, and the gas source is silane (SiH 4 ) and ammonia (NH 3 ) flow ratio=10sccm:90sccm, protective gas argon (Ar), flow rate 100sccm, deposition time ...
Embodiment 2
[0056] use as figure 2 The ITO glass shown (the glass size is 2cm×2cm×2mm, Φ=120°, the groove size is 1.5cm×1.5cm×1mm), placed in the detergent solution, brushed the surface with a brush, and then placed Clean with ultrasonic vibration in isopropanol for 20 minutes, then rinse the glass surface with ultra-pure water, then put it into a beaker of ultra-pure water for 10 minutes, wash it with N 2 The air gun dries the glass.
[0057] according to image 3 The film is coated on the glass as shown, and the SiNx film (insulation layer) is deposited by plasma chemical vapor emission (PECVD) in the area without film, and then the film is cleaned with an organic solvent; PECVD deposition process parameters: RF source frequency 13.56MHz , the deposition temperature is 200°C, the RF power is 150W, the working pressure is 133Pa, and the gas source is silane (SiH 4 ) and ammonia (NH 3 ) flow ratio=10sccm:90sccm, protective gas argon (Ar), flow rate 100sccm, deposition time 5min.
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Abstract
The invention discloses a quantum dot light-emitting diode device and a preparation method thereof, wherein the device includes a glass substrate with a groove in the middle, the bottom surface and the side surface of the groove and the upper surface of the glass substrate are all provided with a bottom An electrode layer, an insulating layer is arranged on the bottom electrode layer on the side of the groove and the upper surface of the glass substrate, and a hole transport layer, a quantum dot light-emitting layer and an electron transport layer are sequentially arranged on the bottom electrode layer on the bottom surface of the groove. Layer, the top electrode layer is provided on the side of the groove and the insulating layer on the upper surface of the glass substrate and the surface of the electron transport layer; on the one hand, the present invention prevents the quantum dot light-emitting layer from contacting with external air, moisture, etc., avoiding The quantum dot luminescent layer is oxidized and corroded, thereby prolonging the service life of the device; The light extraction efficiency of the device.
Description
technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting diode device and a preparation method thereof. Background technique [0002] Quantum dot luminescent materials based on inorganic nanocrystals have the advantages of saturated color of emitted light, adjustable wavelength, and high photoluminescence and electroluminescence quantum yields, which are suitable for high-performance display devices; from the perspective of preparation technology, quantum dot luminescent materials are suitable for Spin-coating, printing, and printing equipment under non-vacuum conditions; therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become strong competitors for next-generation display technologies. [0003] A QLED device generally includes a glass substrate, an electrode one, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer...
Claims
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Application Information
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