Wafer thickness measuring method by using near infrared rays
A near-infrared, wafer thickness technology, applied in measurement devices, optical devices, instruments, etc., can solve problems such as inability to measure wafers
Inactive Publication Date: 2018-09-25
台濠科技股份有限公司
View PDF5 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, although this measuring device can measure the correct thickness of the wafer, it is known from practical experience that the stated thickness should be the total thickness. If the wafer contains other layer structures, such as tape layer or surface coating layer, it cannot Learn how to accurately measure the thickness of the wafer itself from this utility model patent case
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] see Figure 1 to Figure 4 , shown in the figure is the structure of the selected embodiment of the present invention, which is for illustration only, and is not limited by this structure in the patent application.
[0023] The present invention provides a method 1 for measuring the thickness of a wafer using near-infrared rays, as figure 2 As shown, it includes the steps of setting probe 11, datum plane setting 12, measuring 13 and calculating 14, wherein:
[0024] Such as image 3 As shown, the wafer 2 is arranged horizontally and has an upper surface 21 and a lower surface 22, the upper surface 21 and the lower surface 22 are not penetrated by near-infrared light, and at least one of the upper surface 21 and the lower surface 22 The latter has a transparent layer, the transparent layer has an inner surface attached to the upper surface 21 or the lower surface 22, and has an outer surface facing away from the inner surface.
[0025] Set probe 11: eg figure 2 As s...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Wavelength | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a wafer thickness measuring method by using near infrared rays. The upper and lower sides of a wafer have two measuring heads, and reference planes are invented; near infraredlight cannot penetrate the upper and lower surfaces of the wafer; the near infrared light can be emitted by emitters of the two measuring heads, and corresponding receivers can receive the reflected near infrared light; and the furthest distance between the reference planes obtained through calculation is a first distance, and the nearest distance between the reference planes is a second distance.The thickness of a hyaline layer is obtained by the difference of the distance between the upper or lower surfaces fitting to an interior surface of the hyaline layer and the reference planes, and the distance between an external surface of the hyaline layer and the reference planes; and the total thickness of the wafer containing the hyaline layer can be obtained by subtracting the second distance from the first distance, the thickness of the wafer can be obtained by subtracting the thickness of the hyaline layer from the total thickness.
Description
technical field [0001] The invention relates to a technique for measuring the thickness of a wafer, in particular to a method for measuring the thickness of a wafer by using near-infrared rays. Background technique [0002] According to China Taiwan Patent Publication No. I426574 Invention Patent Case, it is disclosed that a light wave band is irradiated to a semiconductor wafer (4) on a rotary fixture (6) in a non-contact manner through a measuring head (13) along the direction of the arrow (A). ), the reflected radiation (16) is transmitted to the spectrometer (17) along the direction of the arrow (B), and is analyzed to measure the thickness of the wafer. According to China Taiwan Patent Announcement No. 393576 Invention Patent Case, as shown in FIG. 16 (I), the conceptual illustration of the infrared reflection in the 2-layer epitaxial wafer is also used to measure the thickness of the wafer. However, if a metal surface is formed on the surface of the wafer in the afore...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G01B11/06
Inventor 高清芬王健烨邵伟卿
Owner 台濠科技股份有限公司