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Method for Improving the Uniformity of Epitaxial Growth

A technology of epitaxial growth and uniformity, applied in electrical components, circuits, semiconductor/solid-state device manufacturing, etc., can solve the problems of EPI growth area difference, EPI growth morphology, thickness and concentration difference.

Active Publication Date: 2020-11-24
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing method, the redundant pattern 103 is a large rectangle or square, and the difference between the redundant pattern 103 and the actual device design pattern 102 is far away, which is not conducive to reducing the difference in the EPI growth area between regions, and finally Differences in Morphology, Thickness, and Concentration Lead to EPI Growth

Method used

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  • Method for Improving the Uniformity of Epitaxial Growth
  • Method for Improving the Uniformity of Epitaxial Growth
  • Method for Improving the Uniformity of Epitaxial Growth

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Embodiment Construction

[0023] Such as figure 2 Shown is a flowchart of a method for improving the uniformity of epitaxial growth in an embodiment of the present invention; as Figure 3A to Figure 3C As shown, it is the version of 3 kinds of redundant graphics adopted by the method of the embodiment of the present invention figure 2 structure; such as Figure 4 As shown, it is a version with redundant graphics added in the method for improving the uniformity of epitaxial growth in the embodiment of the present invention figure 2 , the method for improving the uniformity of epitaxial growth in the embodiment of the present invention includes the following steps:

[0024] Step 1: designing a redundant pattern of the epitaxial growth layer, the redundant pattern is a similar device pattern obtained according to the device design pattern.

[0025] The devices corresponding to the device design graphics include N-type MOSFET devices and P-type MOSFET devices.

[0026] The redundant graph includes s...

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Abstract

The invention discloses a method for improving the uniformity of epitaxial growth. The method is characterized by comprising the steps that 1 a hierarchical redundancy pattern which is a similar device pattern obtained according to a device design pattern of epitaxial growth is designed; 2) target values of the area and density of an epitaxial layer grown in different areas of the layout are set;and 3) the redundancy pattern is inserted into the layout with the device design pattern so that the area and density of the epitaxial layer in different areas in the layer reach the target values. Thus, the uniformity of the epitaxial growth area can be improved, and the uniformity of the epitaxial layer is optimized.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for improving the uniformity of epitaxy (EPI) growth. Background technique [0002] Such as figure 1 As shown, it is a layout with redundant graphics added in the existing epitaxial growth; a device design graphic 102 is formed on the layout 101, figure 1 Only part of the structure of the layout 101 is shown in the figure, and a device design pattern 102 is shown in the layout 101; a plurality of redundant patterns 103 are filled in the peripheral area of ​​the device design pattern 102 according to the pattern density requirement. In the existing method, the redundant pattern 103 is a large rectangle or square, and the difference between the redundant pattern 103 and the actual device design pattern 102 is far away, which is not conducive to reducing the difference in the EPI growth area between regions, and finally Differences in morpho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02104
Inventor 叶康王昌锋
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD