Vertical cavity surface emitting laser and fabrication method thereof

A vertical cavity surface emission, laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of poor beam quality, widened laser line width, and restrictions on the application of large-aperture VCSELs

Active Publication Date: 2018-10-16
XIAN TECHNOLOGICAL UNIV
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Problems solved by technology

However, in fact, as the laser output window gradually becomes larger, the beam gradually changes from a single transverse mode to a multi-mode structure, the beam quality deteriorates, and the laser line width becomes wider, which affects the accuracy and distance of the laser ranging , which is also the main obstacle for the current high-

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  • Vertical cavity surface emitting laser and fabrication method thereof
  • Vertical cavity surface emitting laser and fabrication method thereof

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Experimental program
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Embodiment 2

[0123] The preparation method comprises the following steps:

[0124] Step 1, the growth of the semiconductor laser chip:

[0125] Step 101, selecting a semiconductor substrate 110; wherein, the thickness of the semiconductor substrate 110 is 150 μm;

[0126] Step 102, using a semiconductor growth method to epitaxially grow a first buffer layer 111 made of the same material as the semiconductor substrate 110 on the upper surface of the semiconductor substrate 110; wherein, the thickness of the first buffer layer 11 is 20 nm;

[0127] Step 103, using the semiconductor growth method to grow a first N-plane current guiding layer 108 with a thickness of 10 nm on the buffer layer 111;

[0128] Step 104, using the semiconductor growth method to grow a multi-period quantum well structure on the upper surface of the current guiding layer 108 to form the first active region 109; wherein, the period of the quantum well structure is 2 groups;

[0129] Step 105, using the semiconductor ...

Embodiment 3

[0192] The difference between the manufacturing method of the vertical cavity surface emitting laser of this embodiment and the second embodiment is only that:

[0193] In this embodiment, the thickness of the semiconductor substrate 110 in step 101 is 400 μm, the thickness of the first buffer layer 11 in step 102 is 2 μm, and the thickness of the first N-side current guiding layer 108 in step 103 is 50 nm, The period of the quantum well structure described in step 104 is 8 groups, the thickness of the first high aluminum layer 104 described in step 105 is 50nm, the period logarithm of the first refraction material layer described in step 106 is 26, in step 109 The period logarithm of the second refraction material layer is 32, and the period logarithm of the third refraction material layer in step 1013 is 38;

[0194] The thickness of the first passivation layer described in step 201 is 2 μm, the flow rate of nitrogen gas in step 203 is 2 L / min, and the time of wet oxidation ...

Embodiment 4

[0204] The difference between the manufacturing method of the vertical cavity surface emitting laser of this embodiment and the second embodiment is only that:

[0205] In this embodiment, the thickness of the semiconductor substrate 110 in step 101 is 275 μm, the thickness of the first buffer layer 11 in step 102 is 1.01 μm, and the thickness of the first N-side current guiding layer 108 in step 103 is 30 nm , the period of the quantum well structure described in step 104 is 5 groups, the thickness of the first high aluminum layer 104 described in step 105 is 30nm, the period logarithm of the first refraction material layer described in step 106 is 22, step 109 The period logarithm of the second refraction material layer in step 1013 is 29, and the period logarithm of the third refraction material layer in step 1013 is 32;

[0206] The thickness of the first passivation layer described in step 201 is 1.3 μm, the flow rate of nitrogen gas in step 203 is 1.5 L / min, and the wet ...

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Abstract

The invention discloses a vertical cavity surface emitting laser and a fabrication method thereof. The laser comprises a semiconductor substrate, a main laser and a seed source laser, wherein the mainlaser comprises a first buffer layer, a first N-side current guide layer, a first active area, a first high-aluminum layer, a first P-type distributed Bragg reflector layer and a first P-side currentguide layer, which are arranged in sequence from bottom to top; the method comprises the following steps: I. growing a semiconductor laser chip; II. fabricating a first oxidation confinement layer; III. fabricating a first current blocking layer, a first N-side electrode and a first P-side electrode; IV. fabricating a second oxidation confinement layer; V. fabricating a second current blocking layer, a second N-side electrode and a second P-side electrode. The vertical cavity surface emitting laser has the advantages of simple structure, reasonable design and small size, improving the beam quality of a high-power laser beam output by a main laser through a seed source laser, and being able to compress the laser line width, and achieving high practicability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is a new type of semiconductor laser, which has all the advantages of semiconductor lasers, such as: small size, low power consumption, low cost, long life and high modulation frequency, etc., and also has advantages that ordinary semiconductor lasers do not have Features, such as: output circular light spot, on-wafer test and high-density array integration, etc. Since VCSEL was born in 1977, it has continuously attracted the attention of scientific researchers and market demand, especially small-aperture low-power VCSEL devices. Small-aperture VCSEL generally refers to lasers with a laser output window smaller than 10 μm, because of its dynamic modulation The advantages of high frequency, good beam qua...

Claims

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Application Information

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IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18308Y02P70/50
Inventor 张祥伟刘宝元陈靖聂亮陶禹韩峰吴玲玲郭荣礼
Owner XIAN TECHNOLOGICAL UNIV
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