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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of limited effect and high cost, achieve the effect of increasing the threshold voltage and improving the anti-narrow channel effect

Pending Publication Date: 2018-10-19
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the method of improving the anti-narrow channel effect needs to add additional photomasks or process steps, which is costly and has limited effect

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0038] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The device comprises a substrate and a MOS transistor, wherein the substrate is provided with a channel region havinga channel region; a MOS transistor, having a grid electrode positioned on the channel region; a first isolation structure and a second isolation structure, wherein the first isolation structure and the second isolation structure are located on the two sides of the channel region in the length direction of the gate, the first isolation structure is provided with a first protruding portion which islocated at the top end and protrudes towards the channel region, and the second isolation structure is provided with a second protruding portion which is located at the top end and protrudes towards the channel region. Compared with the prior art, the groove is formed in the edge of the channel, the insulating layer correspondingly forms a bulge at the groove, so that the thickness of the insulating material between the edge of the channel and the grid electrode is increased. According to the structure, the threshold voltage of the edge position of the channel is increased, the effect of reducing the threshold voltage caused by the edge electric field is counteracted, and then the anti-narrow channel effect of the MOS device is improved.

Description

technical field [0001] The invention mainly relates to the technical field of semiconductors, in particular to a semiconductor device for improving the anti-narrow channel effect of MOS transistors. Background technique [0002] In a shallow trench isolation (STI, Shallow Trench Isolation) metal oxide semiconductor (MOS, Metal-Oxide Semiconductor) structure, in the width direction of the MOS device, the gates on both sides of the channel cover part of the insulating isolation layer. When the gate voltage is applied, since the electric field at the edge of the gate ends at the side of the channel, the electric field at the edge of the channel near the STI increases. This electric field makes the depletion layer at the edge deeper and makes the edge of the channel The surface potential of the increases, so that the edge position can be reversed earlier. Therefore, the threshold voltage (Threshold Voltage, threshold voltage) at the edge of the channel is lower than that at the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/78
CPCH01L29/78H01L29/1033
Inventor 孙超
Owner YANGTZE MEMORY TECH CO LTD
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