Methods for improving reverse narrow channel effect and manufacturing metal oxide semiconductor (MOS) transistor

Abstract

The invention provides methods for improving a reverse narrow channel effect and manufacturing a metal oxide semiconductor (MOS) transistor. The method for improving the reverse narrow channel effect comprises the following steps of: providing a semiconductor substrate on which shallow trenches are formed in turn; forming a lining oxide layer on the inner wall of each shallow trench; and performing angular ion implantation on the side wall of the shallow trench. By the method, the reverse narrow channel effect of the MOS transistor is effectively improved.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor devices, in particular to a method for improving the anti-narrow channel effect in the process of manufacturing MOS transistors. Background technique [0002] As the semiconductor industry develops towards smaller and faster devices, the feature lateral dimensions and depths of semiconductor devices are gradually reduced, requiring source / drain and source / drain extensions to be correspondingly shallower. Currently, the source / drain junction is almost always formed by doping by ion implantation. As the size of electronic components shrinks, how to manufacture the source and drain of metal-oxide-semiconductor (MOS) transistors with nanometer process technology is the development direction of ion implantation technology at present and in the future. [0003] However, with the shortening of the gate length, many negative effects that affect the normal operation of the transistor appear duri...

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Problems solved by technology

This results in the subsequent formation of the main transistor (eg figure 2 As shown by the thick solid line), two parasitic transistors with relatively low threshold voltages (such as figure 2 shown in the dotted line box), in the working process of the main transistor, there will be a more serious anti-narrow channel effect, and the threshold voltage of the transistor will drop

[0006] Due to the anti-narrow channel effect that is easy to occur in the manufacture of existing small-size devices (below 0.18 μm), the threshold voltage changes greatly, the parasitic junction capacitance of the device increases, and the operating speed decreases

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