MOS field effective pipe and its production

Abstract

The invention is concerned with a kind of MOS field-effect transistor. The breadth of the poly gate to MOS field-effect transistor adds in linearity from the someplace of the simple channel insulated area closed to both sides of breadth and the silicon area on boundary of silicon area. The invention is also concerned with the production method of MOS field-effect transistor. At first, define the geometry parameter of the shape change to this poly gate, according to the degree of anti-narrow channel effect and the general characteristic of MOS field-effect transistor. Then, change domain according to the decided geometry parameter. It adds the breadth of the poly gate on the rim of field-effect transistor in linearity, and this is equal to add the length of channel to parasitical transistor and reduces its leakage current to advance the threshold voltage of parasitical transistor. Then the result is to reduce the leakage current of main and advance its threshold voltage and solve the problem that the descendant of threshold voltage caused from the improvement of anti-narrow channel effect of MOS field-effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a MOS field effect transistor and a manufacturing method thereof. Background technique [0002] FIG. 1 is a schematic diagram of a cross-sectional structure of a MOS field effect transistor in the prior art. As shown in FIG. 1 , on both sides of the silicon region are shallow trench isolation regions, above which is a gate oxide, and above the gate oxide is a polysilicon gate. In the current conventional MOS field effect transistor, the width of the polysilicon gate is uniform in the width direction of the field effect transistor. FIG. 2 is a schematic diagram of a layout of a MOS field effect transistor in the prior art. As shown in FIG. 2 , in the W direction, that is, in the width direction of the field effect transistor, the width of the polysilicon gate is uniform. [0003] In MOS field effect transistors using shallow trench isolation (STI) technology in the prior...

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Problems solved by technology

Therefore, this reverse narrow channel effect will cause the threshold voltage of the transistor to drop

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