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Pressure sensing unit, pressure sensor and pressure sensing device

A pressure sensor and sensing unit technology, applied in the electronic field, can solve problems such as structure, performance limitations, and difficulty in meeting performance requirements

Active Publication Date: 2018-11-02
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure and performance limitations of traditional pressure sensors make it difficult to meet the performance requirements of people in related fields.

Method used

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  • Pressure sensing unit, pressure sensor and pressure sensing device
  • Pressure sensing unit, pressure sensor and pressure sensing device
  • Pressure sensing unit, pressure sensor and pressure sensing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] refer to figure 2 , preferably, the vertical thin film transistor 100 and the horizontal thin film transistor 200 are arranged side by side in sequence; that is, the vertical thin film transistor 100 and the horizontal thin film transistor 200 have a certain front-to-back relative positional relationship in the distribution position; in this case, artificially defined, Both a vertical thin film transistor 100 and a horizontal thin film transistor 200 connected thereto are regarded as a pressure sensing subunit C.

[0050] Here, it should be understood that the above-mentioned one pressure sensing subunit C itself can constitute a pressure sensing unit 01; of course, it is also possible that a plurality of pressure sensing subunits C as a whole constitute a pressure sensing unit 01, for example, It is two, three or four, etc., which is not limited in the present invention.

[0051] In the present invention, in order to further obtain larger current fluctuations and imp...

Embodiment 2

[0060] Compared with the method in which the vertical thin film transistor 100 and the horizontal thin film transistor 200 are arranged side by side in sequence in the first embodiment, this embodiment also provides a ring structure of the vertical thin film transistor 100, and the horizontal thin film transistor 200 is located at the bottom of the vertical thin film transistor 100 as a whole. The setting method inside the ring structure, that is, the horizontal thin film transistor 200 is located inside the vertical thin film transistor 100, is as follows, refer to Image 6 :

[0061] It should be noted, Image 6 In the schematic plan view of the pressure sensing unit 01 shown in , only the partial structure of the vertical thin film transistor 100 (the part between the two dotted line boxes) and the horizontal thin film transistor 200 (the part inside the middle dotted line box) is shown. (such as the second pole 102 of the vertical thin film transistor 100, the first pole ...

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PUM

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Abstract

The embodiment of the invention provides a pressure sensing unit, a pressure sensor and a pressure sensing device, which relate to the technical field of electronics, and are capable of high-sensitivity pressure sensing. The pressure sensing unit comprises a vertical thin-film transistor arranged between a first substrate and a second substrate. The vertical thin film transistor comprises a firstsubstrate, a semiconductor active layer, a second electrode, an insulating supporting body and a grid electrode, which are sequentially arranged in the direction from the first substrate to the secondsubstrate. An air gap layer is formed between the grid electrode and the second electrode through the insulating supporting body.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a pressure sensing unit, a pressure sensor, and a pressure sensing device. Background technique [0002] In recent years, the development of sensors has received extensive attention and research. Both scientific research and enterprises have gradually paid attention to the research and production of sensors, which has also promoted the rapid development of artificial intelligence, wearable electronics, and the Internet of Things. With the rapid development of these fields, people have higher and higher requirements for sensor devices, and sensor devices are also developing in the direction of high sensitivity, multiple types, flexibility, and small size. [0003] Among them, because the pressure sensor can sense the change of the pressure signal, it has been applied in the fields of intelligent bionic robot, life health, mobile life, wearable electronics and so on. However, ...

Claims

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Application Information

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IPC IPC(8): G01L1/16G01L9/08
CPCG01L1/16G01L9/08G01L1/005H01L29/84G06F3/0412H01L29/72
Inventor 王庆贺王东方周斌赵策苏同上程磊磊张扬李广耀
Owner BOE TECH GRP CO LTD