High purity titanium ingot cogging forging method used for semiconductor sputtering target material

Abstract

The invention relates to a high purity titanium ingot cogging forging method used for a semiconductor sputtering target material. The method comprises the following steps that 1, the ingot preparationis conducted; 2, the ingot obtained from the step1 is heated primarily; 3, the heated ingot obtained from the step 2 is cogged and forged to obtain a billet; 4, the billet obtained from the step 3 iscooled; 5, the billet obtained from the step 4 is heated secondarily; 6, the heated billet obtained from the step 5 is forged secondarily to obtain a secondary billet; 7, the secondary billet obtained from the step 6 is cooled secondarily; 8, the secondary billet obtained from the step 7 is heated for the third time; and 9, the secondary billet obtained from the step 8 is forged and molded. The method has the advantages that the surface particles of the high purity titanium ingot product are fine and uniform and have no residue, and the production requirements of the target material are met.

Description

technical field [0001] The invention relates to the technical field of metal forging, in particular to a high-purity titanium ingot blank forging method used for semiconductor sputtering targets. Background technique [0002] In traditional forging methods, in order to ensure that titanium and titanium alloy forgings have good comprehensive properties at room temperature and high temperature, they are usually forged at a moderate strain rate below the β transformation temperature. [0003] In the prior art, after the forged titanium ingot product is processed by the lathe, the macroscopic particles are coarse. After the TMP process of the normal titanium target production, the part marked in the circle will remain on the final product titanium target, which cannot meet the requirements of semiconductor targets. production, leading to product batch scrapping. [0004] Therefore, there is an urgent need for a forging process that can make the macroscopic and gastric tube stru...

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Problems solved by technology

[0003] In the prior art, after the forged titanium ingot product is processed by the lathe, the macroscopic particles are coarse. After the TMP process of the normal titanium target production, the part marked in the circle will remain on the final product titanium target, which cannot meet the requirements of semiconductor targets. production, leading to batch scrapping of products

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