Super-junction lateral double-diffused metal oxide semiconductor (SJ-LDMOS) device with partial buried layer

Abstract

The invention provides a super-junction double-diffused metal oxide semiconductor (SJ-LDMOS) device with a partial buried layer. Second conductive types of semiconductor posts and first conductive types of semiconductor posts are arranged in a first conductive type of semiconductor light-doping epitaxial layer and are alternatively arranged in a y direction, a second conductive type of semiconductor body region is arranged in the second conductive types of semiconductor posts and the first conductive types of semiconductor posts in a horizontal penetrating way, a first conductive type of buried layer is arranged at the top of one side of a second conductive type of semiconductor, a first conductive type of semiconductor drain region penetrates through the second conductive types of semiconductor posts and the first conductive types of semiconductor posts, and a first conductive type of buried layer is arranged below the first conductive types of semiconductor posts. By the second conductive types of semiconductor posts and the first conductive types of semiconductor posts, charge balance is achieved, the x-direction electric field is reduced, and lower conduction resistance is achieved; and meanwhile, the charge among the posts is not balanced by auxiliary consumption of the second conductive types of semiconductor substrates, and the charge balance among the posts is improvedby the first conductive type of buried layer at an alternative part.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a SJ-LDMOS (super-junction lateral double-diffused Metal Oxide Semiconductor) with a part of a first conductive type semiconductor buried layer. Background technique [0002] In the design of power MOS devices, breakdown voltage (BV) and specific on-resistance (R on，sp ) is very strict, with a basic 2.5 power relationship. This is what people often call the "silicon limit", which describes the limit relationship between specific on-resistance and breakdown voltage. This relationship between the two limits the application of MOS devices in the field of high voltage and high current. After years of development, the performance of power MOS devices is getting closer and closer to the limit of the silicon limit. If there is no way to break the limit of silicon, the improvement of the performance of power MOS devices will stagnate. Although there are ...

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Problems solved by technology

[0003] However, SJ (super-junction) is now mainly used in vertical devices, and the application in lateral power devices has not achieved the expected progress. The biggest problem encountered when introducing Super Junction technology into lateral power devices is that the SJ When the drift region is made on a low-resistivity substrate, the so-called "substrate-assisted depletion" effect will occur

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