A dual-band reconfigurable filter based on a sir-loaded pin diode structure
A technology of PIN diodes and reconfigurable filters, which is applied in the field of dual-band reconfigurable filters, can solve problems that cannot satisfy multi-band and multi-system fuze systems, and achieve the effect of large jump range
Active Publication Date: 2021-06-29
NANJING UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, most of the research on reconfigurable filters currently reported uses the method of loading tunable capacitors to achieve small-range tuning of frequencies in the L and S bands, which is far from meeting the requirements of multi-band and multi-system fuze systems.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0032] Such as figure 1 As shown, the dual-band reconfigurable filter based on the SIR-loaded PIN diode structure in this embodiment includes a dielectric substrate. Here, the Rogers4350 substrate can be used, and its relative permittivity is 3.66, and the thickness is 1.524mm. Others can also be used. specifications of the substrate. A microstrip line circuit is printed on the dielectric substrate, and the microstrip line circuit is made of a material with good conductivity. The material here is copper with a thickness of 1 ounce, and a gold plating process is adopted. The copper-clad metal under the dielectric substrate serves as the ground of the entire filter.
[0033] Such as figure 2 As shown, the microstrip line circuit includes three U-shaped SIR resonators, two signal coupling lines, impedance matching lines, four PIN switching diodes, open terminal lines, three impedance lines and three matching loads. Among them, the first SIR resonator is a symmetrical U-shaped...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| length | aaaaa | aaaaa |
| impedance | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The present invention proposes a dual-band reconfigurable filter based on the SIR-loaded PIN diode structure, which includes a dielectric substrate, a printed microstrip line circuit on the substrate, metal-coated copper arranged under the dielectric substrate, and a metal-coated Copper grounding; the upper microstrip line circuit of the present invention includes three U-shaped SIR resonators and signal coupling lines, SIR resonator one is located above the coupling line, and SIR resonator two and SIR resonator three are symmetrically distributed below the signal coupling line. A PIN diode is loaded on the resonator to connect a matching load or impedance line, and the reconfigurable function of the filter is realized by adjusting the PIN switch diode. The dual-band reconfigurable filter based on the SIR-loaded PIN diode structure of the present invention has the characteristics of large passband frequency hopping range, compact structure, low spurious frequency, large mutual isolation between two frequency bands, and the like.
Description
technical field [0001] The invention relates to the technical field of reconfigurable filters, in particular to a dual-band reconfigurable filter based on an SIR-loaded PIN diode structure. Background technique [0002] With the rapid development of electronic countermeasures, in order to improve the anti-interference ability of the fuze system, modern fuze technology is developing towards the trend of multi-band and multi-system. For different working frequency bands and working modes, the transceiver front-end needs to use multiple filter banks composed of different center frequencies for frequency selection. The disadvantage of the filter bank is that it complicates the system architecture, increases the system size, and brings significant loss, which does not conform to the current mainstream trend of miniaturization, integration, and low energy consumption of the front-end circuit of the transceiver. Therefore, it is hoped that one filter can realize the functions of m...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/20
CPCH01P1/201
Inventor 肖泽龙许辉达许建中吴礼王静高晓堃张晋宇
Owner NANJING UNIV OF SCI & TECH