This invention discloses a suboctave band
equalization structure and a method for optimizing in-band flatness based on it, relating to the technical field of
microwave circuits. The suboctave band
equalization structure consists of a 50-
ohm microstrip line, an absorption
resistor, and a high-impedance line. The high-impedance line employs an S-shaped bend structure to reduce volume, and the absorption
resistor's geometric dimensions are adjusted to precisely control the
equalization depth. This invention utilizes the transmission characteristics of a
resonator exhibiting high
insertion loss at the center of the band and gradually decreasing
insertion loss at both sides when the
fundamental frequency reaches the second resonant frequency. This complements the transmission characteristics of a filter, which has low
insertion loss in the center of the
passband and gradually increasing
insertion loss at both sides. This application can significantly improve in-band flatness by physically canceling
passband edge losses through passive
microstrip circuits while ensuring high matching performance with
return loss better than -20dB. It has advantages such as simple structure, easy integration, and strong
engineering applicability.