TFT substrate and method of making the same

Abstract

The invention provides a TFT substrate and a manufacturing method thereof. The source / drain of the TFT substrate of the present invention comprises a metal layer and a barrier layer formed by an inorganic amorphous conductive material or an organic conductive material, and the barrier layer is arranged on the source / drain contact area of ​​the active layer and the source / drain Between metal layers, due to the isotropy of inorganic amorphous conductive materials or organic conductive materials, no diffusion channels similar to grain boundaries will be formed, which can block the diffusion of metal atoms in the source / drain to the active layer, and at the same time No potential difference will be generated during the process of etching to form the source / drain, which can prevent the metal layer from being galvanically corroded.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate and a manufacturing method thereof. Background technique [0002] The flat panel display device has many advantages such as thin body, power saving, and no radiation, and has been widely used. Existing flat panel display devices mainly include Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED). [0003] Both liquid crystal displays and organic electroluminescence displays require TFT (Thin Film Transistor, thin film transistor) substrates and are driven by TFF elements on the TFT substrates. Therefore, thin film transistors, as the main driving elements in current liquid crystal display devices and active matrix OLED display devices, are directly related to the development direction of high-performance flat panel display devices. [0004] Taking the bottom-gate thin film transistor as an example, figure 1 It is a schematic structural diagra...

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Problems solved by technology

However, when the source / drain metal layer of Cu / Mo is etched to form the source / drain by wet process, a galvanic cell is formed between Cu, Mo and the etching solution to cause corrosion of Cu

like figure 2 As shown in the enlarged frame of the middle dotted line, Cu is hollowed out, and the hollowed out part may cause etching solution to remain and further affect the channel of the active layer. When the upper layer of the chemical layer needs to be deposited and etched to form structures such as metal electrode lines, it may cause these metal electrode lines to remain at the broken film and cause a short circuit or a short circuit with the source / drain

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