TFT substrate and manufacturing method thereof

Abstract

The invention provides a TFT substrate and a manufacturing method thereof. The source / drain of the TFT substrate disclosed by the invention comprises a metal layer and a barrier layer formed by an inorganic amorphous conductive material or an organic conductive material; wherein the barrier layer is arranged between a source / drain contact region of an active layer and the metal layer of the source / drain. Due to the isotropy of the inorganic amorphous conductive material or the organic conductive material, a diffusion channel similar to a grain boundary is not formed, therefore, the diffusion of the source / drain metal atoms to the active layer can be blocked; meanwhile, a potential difference is not generated during the wet etching process of forming the source / drain, therefore, the metal layer can be prevented from being electrochemically corroded.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate and a manufacturing method thereof. Background technique [0002] The flat panel display device has many advantages such as thin body, power saving, and no radiation, and has been widely used. Existing flat panel display devices mainly include Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED). [0003] Both liquid crystal displays and organic electroluminescence displays require TFT (Thin Film Transistor, thin film transistor) substrates and are driven by TFF elements on the TFT substrates. Therefore, thin film transistors, as the main driving elements in current liquid crystal display devices and active matrix OLED display devices, are directly related to the development direction of high-performance flat panel display devices. [0004] Taking the bottom-gate thin film transistor as an example, figure 1 It is a schematic structural diagra...

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Problems solved by technology

However, when the source / drain metal layer of Cu / Mo is etched to form the source / drain by wet process, a galvanic cell is formed between Cu, Mo and the etching solution to cause corrosion of Cu

like figure 2 As shown in the enlarged frame of the middle dotted line, Cu is hollowed out, and the hollowed out part may cause etching solution to remain and further affect the channel of the active layer. When the upper layer of the chemical layer needs to be deposited and etched to form structures such as metal electrode lines, it may cause these metal electrode lines to remain at the broken film and cause a short circuit or a short circuit with the source / drain

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