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Etchant composition

A technology of composition and etching solution, applied in the directions of surface etching composition, ion implantation plating, coating, etc., can solve the problems of IZO film damage, difficulty, poor processing characteristics, etc., and achieve processing characteristics improved effect

Active Publication Date: 2018-12-07
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the case of using the etching solution composition of the above-mentioned document, the IZO thin film may be damaged due to the fluorine compound, and it is difficult to selectively etch only the copper-based metal film, and there is a problem that the number of sheets processed is not good.

Method used

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  • Etchant composition
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~3 and comparative example 1~8

[0072] 10 kg of etching liquid compositions containing the components and compositions (% by weight) of Table 1 below were produced.

[0073] [Table 1]

[0074]

experiment example 1

[0075] Experimental example 1: IZO monolayer film damage test

[0076] In order to perform the damage test of the IZO monolayer film based on the presence or absence of fluoride, the etching process was carried out using the etching solution compositions of Examples 1 to 3 and Comparative Examples 1 to 3, respectively. The etching process utilizes the experimental equipment of jet etching method (model name: ETCHER (TFT), SEMES company), the temperature of etching solution composition during etching process is maintained at 25 ℃, and total etching time is set as 60 seconds, utilizes IZO substrates were subjected to etching tests. At this time, the injection pressure was 0.1 MPa, and the exhaust pressure was maintained at 20 Pa.

[0077] The cross section and surface profile of the IZO substrate after the etching process were examined by SEM (manufactured by Hitachi, model name S-4700), and are shown in FIG. 1( a ) and FIG. 1( b ).

[0078] Referring to Fig. 1 (a), it can ...

experiment example 2

[0080] Experimental example 2: The change of cone angle (T / A) with the number of sheets processed

[0081] The etchant compositions of Examples 1 to 3, Comparative Examples 4 and 5 were maintained at 25°C respectively, and carried out Etch testing of substrates. The total etching time was set as 2 times of the Cu etching time to carry out over etching (Over etch). Regarding the experimental equipment and exhaust conditions, it was carried out in the same manner as Experimental Example 1, and the results are shown in Table 2 and figure 2 .

[0082] [Table 2]

[0083]

[0084] Refer to Table 2 and figure 2, it can be seen that in the case of Examples 1 to 3, when the content of sulfamic acid satisfies the content range of the present invention, more specifically, when the preferred content range is satisfied, the T / A that changes with the number of sheets processed does not change much and is stable .

[0085] However, when the sulfamic acid was not contained as in Co...

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Abstract

The present invention provides an etchant composition comprising a persulfate salt, an inorganic acid, a cyclic amine compound, an organic acid, an organic acid salt, a sulfamic acid, a glycine, and water, with respect to the entire etchant composition 100% by weight, the content of the sulfamic acid is 0.1 to 6% by weight, and the content of the glycine is 0.1 to 5% by weight. The etching liquidcomposition of the present invention can selectively etch a copper-based metal film.

Description

technical field [0001] The present invention relates to an etchant composition capable of selectively etching copper-based metal films. Background technique [0002] For the image display of the flat panel display, a TFT (Thin Film Transistor (Thin Film Transistor)) array of transparent pixel electrodes, gate electrodes, source electrodes and drain electrodes is used. Usually, a transparent conductive film mainly composed of indium is used as a pixel electrode, and a single-layer film or a multilayer film mainly composed of Cu, Cr, Mo, Ti, Al, etc. is used as a gate electrode, a source electrode, and a drain electrode. . [0003] In recent years, in order to increase the throughput of the production process, IZO (Indium Zinc Oxide) as the indium-based transparent conductive film has been deposited on the bottom part as the gate (Gate) wiring, and copper-based metals have been developed on it. The film forms new data (Data) wiring. At this time, in order to etch the above-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23C14/58
CPCC23C14/5873C23F1/18C09K13/06
Inventor 刘仁浩金宝衡南基龙金相泰朴英哲林大成
Owner DONGWOO FINE CHEM CO LTD