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Etching solution composition

A technology of composition and etching solution, applied in the direction of surface etching composition, vacuum evaporation plating, coating, etc., can solve the problems such as IZO film damage, poor characteristics of processing sheets, difficulty, etc., to achieve the characteristics of processing sheets improved effect

Active Publication Date: 2020-10-02
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the case of using the etching solution composition of the above-mentioned document, the IZO thin film may be damaged due to the fluorine compound, and it is difficult to selectively etch only the copper-based metal film, and there is a problem that the number of sheets processed is not good.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~3 and comparative example 1~8

[0072] 10 kg of an etching solution composition containing the components and composition (weight%) of Table 1 below was produced.

[0073] [Table 1]

[0074]

experiment example 1

[0075] Experimental example 1: IZO single-layer film damage test

[0076] In order to perform an IZO single-layer film damage test based on the presence or absence of fluoride, an etching process was performed using the etching solution compositions of Examples 1 to 3 and Comparative Examples 1 to 3, respectively. The etching process uses an experimental equipment (model name: ETCHER (TFT), SEMES company) of the spray etching method. During the etching process, the temperature of the etching solution composition is maintained at 25°C, and the total etching time is set to 60 seconds. IZO substrate was tested for etching. At this time, the injection pressure was 0.1 MPa, and the exhaust pressure was maintained at 20 Pa.

[0077] The cross-section and surface profile of the IZO substrate after the etching process were examined by SEM (product of Hitachi, model name S-4700), and they are shown in Figs. 1(a) and 1(b).

[0078] 1(a), it can be seen that in the case of the PR (photosensi...

experiment example 2

[0080] Experimental example 2: Cone angle (T / A) changes with the number of processed sheets

[0081] The etching solution compositions of Examples 1 to 3 and Comparative Examples 4 and 5 were maintained at 25°C, respectively, and performed Etching test of the substrate. The total etching time was set to double the Cu etching time as a reference, and over etch was performed. Regarding the experimental equipment and exhaust conditions, the same was performed as in Experimental Example 1, and the results are shown in Table 2 and figure 2 .

[0082] [Table 2]

[0083]

[0084] Refer to Table 2 and figure 2 It can be seen that in the case of Examples 1 to 3, when the content of sulfamic acid satisfies the content range of the present invention, more specifically satisfies the preferred content range, the T / A change with the number of processed sheets does not change much and is stable .

[0085] However, when sulfamic acid is not included or deviates from the content range of the presen...

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Abstract

The present invention provides an etching solution composition, which is characterized in that it contains persulfate, inorganic acid, cyclic amine compound, organic acid, organic acid salt, sulfamic acid, glycine and water, relative to the total etching solution composition 100 % by weight, the content of the sulfamic acid is 0.1 to 6 wt %, and the content of the glycine is 0.1 to 5 wt %, and the etching liquid composition of the present invention can selectively etch a copper-based metal film.

Description

Technical field [0001] The present invention relates to an etching solution composition capable of selectively etching a copper-based metal film. Background technique [0002] For image presentation of flat panel displays, a TFT (Thin Film Transistor) array of transparent pixel electrodes, gate electrodes, source electrodes, and drain electrodes is used. Generally, as the pixel electrode, a transparent conductive film mainly composed of indium is used, and as the gate electrode, source electrode, and drain electrode, a single-layer film or multilayer film mainly composed of Cu, Cr, Mo, Ti, Al, etc. is used . [0003] In recent years, in order to increase the throughput of the production process, IZO (Indium Zinc Oxide), which is an indium-based transparent conductive film, has been vapor-deposited as a gate wiring at the lowest part, and a copper-based metal is used on it. The film forms a new data (Data) wiring. At this time, in order to etch the above-mentioned gate wiring, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23C14/58
CPCC23C14/5873C23F1/18C09K13/06
Inventor 刘仁浩金宝衡南基龙金相泰朴英哲林大成
Owner DONGWOO FINE CHEM CO LTD