Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof and relates to the technical field of a semiconductor. The semiconductor device comprises a semiconductor substrate, asemiconductor fin on the semiconductor substrate, a gate structure on the semiconductor fin, a first recess and a second recess in the semiconductor fin and at the two sides of the gate structure respectively, a diffusion barrier layer on the bottom portion and side walls of at least one recess of the first recess and the second recess, and an electrode on the diffusion barrier layer. The diffusion barrier layer is formed on the bottom portions and side walls of the recesses of the semiconductor device, and the electrode is formed on the diffusion barrier layer, wherein the diffusion barrierlayer can minimize the possibility of a P-type dopant or an N-type dopant in the electrode in diffusing into a channel region as far as possible, so that reduction of carrier mobility in the channel region can be avoided as far as possible, short-channel effect is improved and device performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] At present, with the gradual reduction of semiconductor devices, the short channel effect (the short channel effect, referred to as SCE) has become an urgent problem to be solved. Thus, in order to improve the short-channel effect of core devices, ultrashallow and abrupt junctions have been established so far. [0003] In order to enhance device performance, one direction of the next-generation technology is to use a FinFET (Fin Field-Effect Transistor, Fin Field-Effect Transistor) device, which can alleviate the short-channel effect. However, the source region, drain region and halo doping of the FinFET will cause a part of the dopant to diffuse to the channel region, resulting in low doping of the channel region, which will reduce the carrier in the channel region mobility, but als...

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Problems solved by technology

However, the source region, drain region and halo doping of the FinFET will cause a part of the dopant to diffuse to the channel region, resulting in low doping of the channel region, which will reduce the carrier in the channel region mobility, but also increased leakage current

At present, device performance can be improved by optimizing LDD (Lightly Doped Drain, lightly doped drain region) and halo doping profiles, but these methods have limited effects

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