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Thin film transistor, manufacturing method thereof, and display device

A technology of thin film transistors and semiconductors, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems of poor display effect of display devices and inability to control thin film transistors, and achieve the effect of improving display effect and accurate control.

Active Publication Date: 2021-10-29
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present application provides a thin film transistor and its manufacturing method, and a display device, which can solve the problem that the characteristics of the active layer will change greatly under the action of the electric field, the thin film transistor cannot be accurately controlled, and the display effect of the display device is poor. bad question

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  • Thin film transistor, manufacturing method thereof, and display device
  • Thin film transistor, manufacturing method thereof, and display device
  • Thin film transistor, manufacturing method thereof, and display device

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Embodiment Construction

[0057] In order to make the purpose, technical solution and advantages of the present application clearer, the implementation manners of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0058]With the development of the display technology, the requirements for the display device are getting higher and higher, and the performance of the thin film transistor in the display device is very important for the display of the display device. If a negative gate bias voltage is applied to the gate of the thin film transistor, the light will have a great impact on the performance of the thin film transistor, thereby affecting the display of the display device. The influence of light on the thin film transistor during biasing can further improve the display effect of the display device.

[0059] figure 1 It is a schematic structural diagram of a thin film transistor provided by an embodiment of the present invention. Such...

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Abstract

The application discloses a thin film transistor, a manufacturing method thereof, and a display device, belonging to the field of display technology. The thin film transistor includes: a base substrate, and a gate, a source and drain, an active layer, a gate insulating layer and a light-shielding layer arranged on the base substrate, and the light-shielding layer is insulated from the source and drain, and the light-shielding layer is embedded with an active layer. or, the light-shielding layer is located on the side of the active layer close to the gate insulating layer; or, the light-shielding layer is located on the side of the active layer away from the gate insulating layer. The present application solves the problem that the characteristics of the active layer will change greatly under the action of light, the thin film transistor cannot be accurately controlled, and the display effect of the display device is poor. This application is used to control the display of the display device.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, and a display device. Background technique [0002] With the development of display technology, the application of display devices is becoming wider and wider, and the image display of the display device depends on the control of the thin film transistor (English: Thin Film Transistor; TFT for short), so the performance of the thin film transistor is very important for the display device. Saying matters. [0003] In the related art, a thin film transistor includes a substrate, and a gate, a gate insulating layer, an active layer, a source and a drain sequentially arranged on the substrate. When the display device displays images, it is necessary to apply a negative gate bias voltage to the gate to make the active layer conduct or insulate, so as to realize the control of the switching state of the thin film trans...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66969H01L29/78633H01L29/7869
Inventor 宋威闫梁臣赵策周斌王东方丁远奎刘军胡迎宾李伟
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD