Based on a-sin x SPR neurosynaptic device with memristive effect and preparation method thereof
A neural synapse and memristor technology, applied in the field of bionic devices, can solve the problems of small signal processing bandwidth and signal transmission crosstalk, and achieve the effect of large signal processing bandwidth, large bandwidth, and avoiding grazing incidence.
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Embodiment 1
[0036] A based on a-SiN x SPR neurosynaptic device with memristive effect, its structure is as follows figure 1 Shown: include a memristor and a crystalline silicon prism 6 arranged above the memristor. In this embodiment, the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon. The memristor has "Bottom electrode 1 / first a-SiN x Resistive switch layer 2 / second a-SiN x Resistive variable layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon prism 6, and the second a-SiN x The resistive layer 3 is a-SiN containing Ag nanoparticles x thin film with a volume fraction of Ag nanoparticles of 40%, the first a-SiN x The resistive layer 2 is a-SiN containing Ag nanoparticles x film, whose volume fraction of Ag nanoparticles is 5%, and the top electrode 4 is deposited on the first a-SiN x The metal platinum Pt on the bottom surfa...
Embodiment 2
[0046] A based on a-SiN x SPR neurosynaptic device with memristive effect, its structure is as follows figure 2 Shown: include the crystalline silicon wafer 5 and the memristor carried therewith and the crystalline silicon prism 6 arranged above the crystalline silicon wafer 5, in this embodiment the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon, crystal The silicon wafer 5 is also processed from crystalline silicon, and the crystalline silicon prisms 6 of the crystalline silicon wafer 5 are preferably bonded with a refractive index matching liquid; the memristor has a "bottom electrode 1 / first a -SiN x Resistive switch layer 2 / second a-SiN x Resistive variable layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon wafer 5, and the second a-SiN x The resistive switch layer 3 is a-SiN containing Ag nanoparticles x thi...
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