Based on a-sin x SPR neurosynaptic device with memristive effect and preparation method thereof

A neural synapse and memristor technology, applied in the field of bionic devices, can solve the problems of small signal processing bandwidth and signal transmission crosstalk, and achieve the effect of large signal processing bandwidth, large bandwidth, and avoiding grazing incidence.

Active Publication Date: 2020-07-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above, the present invention provides a bionic synapse based on a-SiN for the problems of small signal processing bandwidth and prone to crosstalk in the signal transmission process when the existing memristor-based bionic synapse works. x Light-reading SPR neurosynaptic device with memristive effect and its preparation method

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  • Based on a-sin <sub>x</sub> SPR neurosynaptic device with memristive effect and preparation method thereof
  • Based on a-sin <sub>x</sub> SPR neurosynaptic device with memristive effect and preparation method thereof
  • Based on a-sin <sub>x</sub> SPR neurosynaptic device with memristive effect and preparation method thereof

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Embodiment 1

[0036] A based on a-SiN x SPR neurosynaptic device with memristive effect, its structure is as follows figure 1 Shown: include a memristor and a crystalline silicon prism 6 arranged above the memristor. In this embodiment, the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon. The memristor has "Bottom electrode 1 / first a-SiN x Resistive switch layer 2 / second a-SiN x Resistive variable layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon prism 6, and the second a-SiN x The resistive layer 3 is a-SiN containing Ag nanoparticles x thin film with a volume fraction of Ag nanoparticles of 40%, the first a-SiN x The resistive layer 2 is a-SiN containing Ag nanoparticles x film, whose volume fraction of Ag nanoparticles is 5%, and the top electrode 4 is deposited on the first a-SiN x The metal platinum Pt on the bottom surfa...

Embodiment 2

[0046] A based on a-SiN x SPR neurosynaptic device with memristive effect, its structure is as follows figure 2 Shown: include the crystalline silicon wafer 5 and the memristor carried therewith and the crystalline silicon prism 6 arranged above the crystalline silicon wafer 5, in this embodiment the crystalline silicon prism 6 is a triangular prism processed from crystalline silicon, crystal The silicon wafer 5 is also processed from crystalline silicon, and the crystalline silicon prisms 6 of the crystalline silicon wafer 5 are preferably bonded with a refractive index matching liquid; the memristor has a "bottom electrode 1 / first a -SiN x Resistive switch layer 2 / second a-SiN x Resistive variable layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon wafer 5, and the second a-SiN x The resistive switch layer 3 is a-SiN containing Ag nanoparticles x thi...

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Abstract

a‑SiN based x The SPR neurosynaptic device with memristive effect and its preparation method belong to the technical field of bionic devices. The present invention combines a crystalline silicon prism with a "top electrode / a-SiN x : Memristor structure coupling of metal nanoparticles double resistive layer / bottom electrode, so that the optical signal under electrical modulation is injected into the double resistive layer through the crystal silicon prism, and the surface plasmon resonance (SPR) effect is used to make the device work During the process, the dielectric constant change information of the resistive variable layer is read with an optical signal, and then the optical reading of the synaptic weight of the device is realized. The "electrical modulation, optical reading" neurosynaptic device proposed by the present invention has the traditional "electrical Modulation, electrical reading" neurosynaptic devices have incomparable advantages, because they not only have the characteristics of low energy consumption and non-volatility of traditional memristors, but also have the characteristics of light as an information carrier for signal processing, large bandwidth and anti-electromagnetic interference strong advantage.

Description

technical field [0001] The invention belongs to the technical field of bionic devices, in particular to a-SiN-based x SPR neurosynaptic device with memristive effect and its preparation method. Background technique [0002] Traditional computers are based on the "Von Neumann Architecture". However, in the "Von Neumann Architecture", the data call and transmission between the information memory and the processor are connected through the bus, which makes the efficiency of information processing It is not only affected by the computing speed and storage speed of the processor, but also restricted by the information transmission capacity of the bus, forming the so-called "Von Neumann bottleneck". Although the amount of information processed by the human brain is not less than that of a computer, it is obviously more efficient and consumes less energy. To this end, researchers have constructed the concept of an intelligent computer, expecting the computer to learn neural netwo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/257H10N70/011
Inventor 李东阳次会聚宋宇浩陈奕丞袁余涵李伟蒋向东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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